Results 71 to 80 of about 48,911 (290)
Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems
Advanced Functional Materials, EarlyView.MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley +1 more source
Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor
IEEE Journal of the Electron Devices Society, 2023 In this paper, kink effect observed in the output characteristics of the AlInN/GaN-on-Si high electron mobility transistor (HEMT) after subjecting the Si-substrate to positive/negative bias stress has been studied.
Ramdas P. Khade +4 more
doaj +1 more source
Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials
, 2017 Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel materials.
Bunjaku, Teute +3 more
core +1 more source
Advanced Functional Materials, EarlyView.A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon +7 more
wiley +1 more source
Study of MoN gate impact on GaN high electron mobility transistor
Electronics LettersIn this letter, molybdenum nitride (MoN) gate AlGaN/GaN HEMT has been investigated with MoN developed in various physical vapour deposition (PVD) conditions.
Lixing Zhang +4 more
doaj +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020 A significant rise in the mass production of products that contain nanoparticles is of growing concern due to the detection of their toxic effects on living organisms. The standard method for analyzing the toxicity of substances, including nanomaterials,
V. S. Volcheck, V. R. Stempitsky
doaj +1 more source
Lead Iodide Perovskite Light-Emitting Field-Effect Transistor
, 2015 Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film ...
Bruno, Annalisa +4 more
core +2 more sources
Device Modelling of Silicon Based High-Performance Flexible Electronics [PDF]
, 2017 The area of flexible electronics is rapidly expanding and evolving. With applications requiring high speed and performance, ultra-thin silicon-based electronics has shown its prominence.
Dahiya, Ravinder +3 more
core +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Klein-tunneling transistor with ballistic graphene
, 2014 Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of
Berada, Salim +7 more
core +3 more sources