Results 91 to 100 of about 48,911 (290)

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

, 2011
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less
Clement, Nicolas, Fujiwara, Akira, Nishiguchi, Katsuhiko, Vuillaume, Dominique   +3 more
core   +4 more sources

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors

Advanced Functional Materials, EarlyView.
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee, Hyoik Jang, Myeongjin An, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

3 kV monolithic bidirectional GaN HEMT on sapphire

Applied Physics Express
3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors
Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta   +4 more
doaj   +1 more source

Critical Evaluation of Organic Thin-Film Transistor Models

, 2018
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics.
Borchert, James W., Karner-Petritz, Esther, Klauk, Hagen, Krammer, Markus, Petritz, Andreas, Schider, Gerburg, Stadlober, Barbara, Zojer, Karin   +7 more
core   +1 more source

Self‐Healing and Stretchable Synaptic Transistor

Advanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo, Sangyong Park, Yoonyi Jeong, Jaepyo Jang, Duhwan Seong, In Soo Kim, Myung‐Gil Kim, Mikyung Shin, Minah Suh, Donghee Son, Jin‐Hong Park   +10 more
wiley   +1 more source

Small-signal transistor model in the design of microwave low-noise amplifiers

Технологія та конструювання в електронній апаратурі, 2004
A semi-analytical method for determining the parameters of high electron mobility transistors is presented, which requires only data on the transistor’s S-parameters measured over a wide frequency range.
P. A. Yemtsev
doaj  

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

A GaN-based multi-threshold two-finger high electron mobility transistor with reduced third-order nonlinearity by nullification [PDF]

APL Electronic Devices
GaN-based high electron mobility transistors (HEMTs) have been proven immensely useful for high-power radio-frequency applications. While the primary focus has been power amplification and power-added efficiency, nonlinearity has not been optimized ...
D. Saha, S. Ganguly, B. Parvez, Anurag P. Chilwirwar, Nashra Khalid, Aaqib H. Sheikh, Mahalaxmi Patil   +6 more
doaj   +1 more source

Application of Graphene within Optoelectronic Devices and Transistors

, 2014
Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in optoelectronic and ...
A Calogeracos, A Das, A Javey, A O’Hare, A Pototsky, AB Gouider Trabelsi, AD Franklin, AD Franklin, AHC Neto, AK Geim, AK Geim, AK Geim, C Coletti, CA Downing, CE Shannon, CM Malec, CR Dean, D Schall, DA Stone, E Cobas, E Hendry, E McCann, F Bonaccorso, F Kreupl, F Schwierz, F Xia, FHL Koppens, FM Zhang, FV Kusmartsev, G Hlawacek, GK Lim, H Terrones, HW Zhu, J Park, J Rafiee, J Wang, J Zheng, JA Robinson, JC Meyer, JD Irwin, JH Chen, JH Seol, JR Williams, JT Kim, KI Bolotin, KS Kim, KS Novoselov, KS Novoselov, KS Novoselov, KS Novoselov, L Britnell, L Britnell, L Britnell, L Lu, LA Ponomarenko, LW Tutt, M Amin, M Engel, M Furchi, M Liu, MA Ionescu, ME Pumarol, MI Katsnelson, MI Katsnelson, MM Shulaker, N Savage, O Nicoletti, P Avouris, P Avouris, P Avouris, P Avouris, P Michetti, P Zhao, PP Shinde, PR Wallace, Q Bao, Q Bao, Q Zhang, QY He, QY He, R Cheng, R Martel, R Nandkishore, R Prasher, R Turton, RR Hartmann, S Bae, S Chen, S Jang, SD Sarma, SJ Tans, SV Morozov, T Georgiou, T Mueller, VH Nguyen, VV Zalipaev, X Du, X Fan, X Gan, X Li, X Wang, Y Wu, Y Yang, YB Zhou, YK Koh, YM Lin, YM Lin   +106 more
core   +1 more source