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Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study. [PDF]
ACS OmegaZhang S +5 more
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Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]
Commun EngChung SW, Yoon SH, Jeong JK.
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High Electron Mobility Transistors
2004High Electron Mobility Transistors(HEMTs) [340] are an advanced modification of the simple bulk FET, such as the MEtal Semiconductors Field Effect Transistor (MESFET). Typically, a semiconductor material (barrier) with a comparably wider bandgap is grown on top of a semiconductor material with a higher mobility and comparably lower bandgap.
Vassil Palankovski, Rüdiger Quay
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High electron mobility transistors
1991The High Electron Mobility Transistor (HEMT) has achieved its predicted performance goals, operating at high frequencies (>60 GHz) and high speeds (>10 Gbit/s). As a consequence, it is becoming the transistor of choice for millimetre wave and high speed applications; stimulating the development of new monolithic integrated electronic and optoelectronic
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High electron mobility transistors
Surface Science, 1986Abstract Recent developments in selectively doped III–V compound heterostructures for 2DEG systems and high electron mobility transistors (HEMTs) are described.
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High electron mobility transistors
Bulletin of Materials Science, 1990In this article, I briefly review the physics of the high electron mobility transistor (HEMT), the technological steps involved in the fabrication of the device, the current status, the remaining problems, and some areas of active research in which new developments might be expected in the future.
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GaN electronics with high electron mobility transistors
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004The III-nitrides AlN, GaN, and InN alloys are expected to be basis of a strong development of a novel family of semiconductor devices, for optoelectronics as well as for electronics, GaN-based high electron mobility transistors (HEMTs) have shown superior power handling and operating temperatures at frequency ranges that are beyond the limits of ...
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