Results 111 to 120 of about 12,413 (305)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor

Advanced Materials Interfaces, EarlyView.
An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho, Sina Jamali, Nam‐Trung Nguyen, Tuan‐Khoa Nguyen   +3 more
wiley   +1 more source

Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

, 2006
4.2 K photoluminescence (PL) and 77 K standard Hall-effect measurements were performed for In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor (HEMT) structures grown on GaAs substrates with different indium contents in the InxGa1-xAs
Cui, LJ, Chinese Acad Sci, Novel Mat Lab, Inst Semicond, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn, Zhu ZP (Zhu Z. P.), Cui LJ (Cui L. J.), Zeng YP (Zeng Y. P.), Guo SL (Guo S. L.), Wang BQ (Wang B. Q.), Chu JH (Chu J. H.)   +6 more
core  

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection

, 2018
A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection.
Jian Zhang, Jiadong Li, Baojun Wu, Shuai Yang, Le Gu, Bin Miao, Dongmin Wu, Zhiqi Gu, Hong Wang, Xiangzhen Ding   +9 more
core   +1 more source

Thermal Radiation Emission From 3D Graphene Networks

Advanced Materials Interfaces, EarlyView.
Three‐dimensional graphene networks are demonstrated as exceptional broadband thermal emitters, exhibiting high‐intensity, spectrally homogeneous emission and strong mechanical flexibility compared to conventional emitters like silicon carbide.
Maria Chiara Paolozzi, Emanuele Scoppi, Jacopo Sera, Salvatore Macis, Antonio Grilli, Samuel Jeong, Yoshikazu Ito, Stefano Lupi   +7 more
wiley   +1 more source

Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications

, 2010
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems.
Bambery, Rohan
core  

Xenes for Sustainable Energy: A Roadmap From First‐Principles Design to Practical Deployment

Advanced Materials Interfaces, EarlyView.
Emerging 2D Xenes are advancing from theoretical predictions toward practical energy‐storage and conversion technologies through the integration of first‐principles modelling, experimental synthesis, electrochemical validation, and AI‐assisted materials design, enabling accelerated discovery of high‐performance and sustainable electrochemical systems ...
Onur Karaman, Ceren Karaman
wiley   +1 more source

Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

, 2017
An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.
Wu, BJ, Jiadong Li, 李加东, Baojun Wu, Ding, XZ, 吴东岷, Zhang, J(张鉴), Wu, DM(吴东岷), Wang, H, Li, JD(李加东), Miao, B, Jian Zhang, Wenhui Lu, Gu, ZQ, Hu, YM, Yimin Hu, Lu, WH, Bin Miao, Dongmin Wu, Zhiqi Gu, Hong Wang, Xiangzhen Ding   +21 more
core   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

, 2006
This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy ( MBE) in turn on a GaAs substrate.
Ma L (Ma Long), Yang FH (Yang Fu-Hua), Ma, L, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China. E-mail: malong@semi.ac.cn, Wang LC (Wang Liang-Chen), Huang YL (Huang Ying-Long), Zhang Y (Zhang Yang)   +5 more
core