Results 111 to 120 of about 48,911 (290)

Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

open access: yes, 2011
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model ...
Boykin, Timothy B.   +4 more
core   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

open access: yesAdvanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime

open access: yes, 2009
The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue.
Iannaccone, Giuseppe   +2 more
core   +1 more source

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

open access: yesAdvanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho   +3 more
wiley   +1 more source

Multifunctional Bio‐Based Packaging for Perishable Foods: Structural Design, Scalable Fabrication, and Versatile Applications

open access: yesAdvanced Materials, EarlyView.
An overview of design principles and scalable fabrication strategies for multifunctional bio‐based packaging. Radiative cooling films, modified‐atmosphere films/membranes, active antimicrobial/antioxidant platforms, intelligent optical/electrochemical labels, and superhydrophobic surfaces are co‐engineered from material chemistry to mesoscale structure
Lei Zhang   +6 more
wiley   +1 more source

Short‐Wavelength Infrared Imaging with Organic Photodetectors Based on Non‐Fullerene Acceptors with Detection above 1200 nm

open access: yesAdvanced Materials, EarlyView.
Solution‐processed organic photodetectors (OPDs) based on two novel low band gap non‐fullerene acceptors BZIC‐2F and BZIC‐2Cl, when blended with common polymer donor P3HT, extend detection range beyond 1200 nm with superior performance, rivaling costly inorganic sensors and past literature.
Zhuoran Qiao   +18 more
wiley   +1 more source

New‐Era Polymer Thermoelectrics: Material Innovations, Doping Frontiers, Decoupling Strategies, and Unconventional Applications

open access: yesAdvanced Materials, EarlyView.
The field of polymer thermoelectrics is entering a new era, featuring breakthroughs in addressing the conventional performance disparity between p‐type and n‐type polymers, pioneering doping frontiers, and sophisticated decoupling strategies. This review explores innovations in molecular design and superior stabilities, bridging the gap from ...
Suhao Wang
wiley   +1 more source

Correlated Charge Transport in an Organic Coulomb Glass

open access: yesAdvanced Materials, EarlyView.
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler   +3 more
wiley   +1 more source

AlGaN/GaN Heterostructures in High Electron Mobility Transistors [PDF]

open access: yes, 2018
AlGaN/GaN heterostructures are of high research and industrial interest for the production of high electron mobility transistors (HEMT) utilizing the two-dimensional electron gas (2DEG) induced at the interface due to polarization effects. In the current work, the effect of AlGaN thickness on 2DEG formation is under discussion. In particular, ultrathin
Caban, P.   +4 more
openaire   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

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