Results 101 to 110 of about 12,413 (305)

An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied Physics Letters, 2016
An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 
Albert G. Baca, Andrew M. Armstrong, Andrew A. Allerman, Erica A. Douglas, Carlos A. Sanchez, Michael P. King, Michael E. Coltrin, Torben R. Fortune, Robert J. Kaplar   +8 more
openaire   +2 more sources

Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

, 2001
InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling
Li ZF, Jiang CP,Chinese Acad Sci,Shanghai Inst Tech Phys,Natl Lab Infrared Phys,Shanghai 200083,Peoples R China., Cui LJ, Guo SL, Lu W, Zeng YP, Huang ZM, Jiang CP, Yu J, Zhu ZP, Chu JH, Wang BQ   +11 more
core  

Organic transistors based on pentacene and dibenzothiophene derivatives [PDF]

, 2008
This thesis is concerned with the fabrication and characterisation of organic thin film transistors. Initially, pentacene thin films were investigated, with results comparable to those found in published literature.
Kolb, Daniel
core  

GaN high electron mobility transistors with AlInN back barriers

, 2016
GaN based high electron mobility transistor (HEMT) structures with AlInN back barriers are designed and investigated by Self-consistent Schrodinger-Poisson numerical simulation.
He, XG, X.G. He, D.G. Zhao, P. Chen, Z.S. Liu, J. Yang, Liu, JP(刘建平), X.J. Li, Jiang, DS, J.P. Liu, D.S. Jiang, Liu, ZS, Zhang, LQ(张立群), Li, XJ, Le, LC, Yang, H(杨辉), L.C. Le, Zhu, JJ, Chen, P, H. Yang, J.J. Zhu, Zhao, DG, Yang, J, L.Q. Zhang   +23 more
core   +1 more source

Intimate Interaction Between Nucleic Acid and Conjugated Polymers in Organic Electrochemical Transistors Enables Ultrasensitive Biomarker Detection

Advanced Materials, EarlyView.
The intimate interaction between negatively charged RNA molecules and conjugated polymers in organic electrochemical transistors (OECTs) in aqueous electrolytes is investigated. It demonstrates that RNA binding reduces the volumetric capacitance of the polymer channel, enabling the development of an ultrasensitive biosensing platform capable of ...
Hong Liu, Naixiang Wang, Anneng Yang, Jiajun Song, Li Li, Iain McCulloch, Helen Ka‐wai Law, Feng Yan   +7 more
wiley   +1 more source

A SiC Power MOSFET Model With an Improved Description of the JFET Region

IET Power Electronics
Based on the technology computer‐aided design (TCAD) simulation, a SPICE model of vertical silicon carbide power metal‐oxide‐semiconductor field effect transistor has been proposed with an improved description of the junction‐type field effect transistor
Xiangzhen Li, Manhong Zhang, Yumeng Cai, Xiaoguang Wei, Zhibin Zhao, QingXin Meng, Zezhou Chang   +6 more
doaj   +1 more source

Enhancing room temperature electron mobility at high carrier concentration in transparent BaSnO3/La:BaSnO3/BaSnO3 heterostructures

Journal of Materiomics
Transparent conducting oxides are increasingly important for optoelectronic and thin film transistor applications. La doped BaSnO3 is a strong candidate for its high transparency, high carrier concentration, high mobility and abundancy.
Yingli Zhang, Haopeng Du, Dirui Wu, Jinxin Ge, Jiahao Song, Mengkang Xu, Qingjiao Huang, Jiangyu Li, Changjian Li   +8 more
doaj   +1 more source

Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications

, 2009
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core  

Efeitos da saturação de velocidade em aplicações de alta frequência do Mosfet [PDF]

, 2003
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia ElétricaEste trabalho apresenta análise dos efeitos da saturação da velocidade dos portadores e do campo elétrico transversal na ...
Bork, Briam Cavalca
core  

Warm electron energy loss in GaInAs/AlInAs high electron mobility transistor structures

, 1993
Electron energy loss rates via the emission of acoustic phonons in moderately degenerate GaInAs/AlInAs high electron mobility transistor structures are investigated at electron temperatures between T(e) = 1.8 and 15 K.
STRAW, A, BALKAN, N, A. Straw, N. Balkan, M. Ç. Arikan, ARIKAN, MC   +5 more
core   +1 more source