Results 121 to 130 of about 12,413 (305)

Flexible Chemiresistive Chitosan‐Glycerol Sensors on Laser‐Induced Graphene Electrodes for Room‐Temperature Ammonia Detection

Advanced Materials Technologies, EarlyView.
Flexible Chitosan‐glycerol sensor integrated with porous laser‐induced graphene (LIG) electrodes enable room‐temperature chemiresistive detection of ammonia (NH3) and proof‐of‐concept detection of fish spoilage. ABSTRACT We report a metal‐free sensor platform combining laser induced graphene (LIG) electrodes with drop‐deposited, glycerol‐plasticized ...
Mintesinot Tamiru Mengistu, Richard Murray, Cara‐Lena Nies, Cathal Larrigy, Martina Piletti, Jahidul Islam, Daniela Iacopino, Eileen Hurley, Michael Nolan, Aidan J. Quinn   +9 more
wiley   +1 more source

Enhancing Small Molecule Sensing With Aptameric Functionalized Nano Devices

Advanced Materials Technologies, EarlyView.
Unveiling an ultra‐sensitive, non‐invasive neurotransmitter sensor. For the first time, a nanoscale sensor for detecting an important neurotransmitter was demonstrated using micro‐electromechanical systems (MEMS) technology. Our approach utilized field‐effect transistor (FET)‐based readout to enable pico‐molar detection of biomarkers in sweat.
Thi Thanh Ha Nguyen, Cong Minh Nguyen, Quang Thang Trinh, Minh Anh Huynh, Khanh Vinh Ho, Dang Co Pham, Dzung Dao, Sven Ingebrandt, Sina Jamali, Xuan Thang Vu, Nam‐Trung Nguyen, Tuan‐Khoa Nguyen   +11 more
wiley   +1 more source

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications. [PDF]

Micromachines (Basel), 2023
Lee MW, Chuang CW, Gamiz F, Chang EY, Lin YC.   +4 more
europepmc   +1 more source

Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

, 2002
A step-graded InAlAs buffer layer and an In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor (MM-HEMT) structures were grown by molecular beam epitaxy on GaAs (001) substrates, and rapid thermal annealing was performed on them in ...
Wu J, Cui LJ, Zeng YP, Lin LY, Cui LJ,Chinese Acad Sci,Inst Semicond,Novel Mat Lab,Beijing 100083,Peoples R China., Zhu ZP, Wang BQ   +6 more
core  

Novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor

, 1995
We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). This device incorporates a pseudomorphic InGaAs/AlAs/InAs resonant-tunneling diode into the source of a nonalloyed ohmic ...
Chen, K. J., Yamamoto, M., Maezawa, K.
core   +1 more source

Printable Conductive Hydrogels for Electrochemical Biosensing and Soft Bioelectronic Interfaces

Advanced Science, EarlyView.
Flexible, conductive hydrogels that integrate printability, mechanical tunability, biocompatibility, and electronic performance remain challenging to achieve. Here, we develop 3D‐printable poly(ethylene glycol)–poly(pyrrole)‐ hydrogels with tissue‐like mechanics, high cytocompatibility, and robust electrochemical function.
Lukas Hein, Renan Colucci, Xin Wei, Tsvetomir Ivanov, Katharina Landfester, Ulrike Kraft, Maria Villiou   +6 more
wiley   +1 more source

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface. [PDF]

ACS Appl Mater Interfaces, 2023
Hospodková A, Hájek F, Hubáček T, Gedeonová Z, Hubík P, Hývl M, Pangrác J, Dominec F, Košutová T.   +8 more
europepmc   +1 more source

Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness

, 2007
Magnetotransport properties of In-0.53 GaAs/In-0.52 AlAs high electron mobility transistor (HEMT) structures with different channel thickness of 10-35 nm have been investigated in magnetic fields up to 13 T at 1.4 K.
Zhu, ZP (Zhu Zhan-Ping), Zhou, WZ (Zhou Wen-Zheng), Li, DL (Li Dong-Lin), Shang, LY (Shang Li-Yan), Zeng, YP (Zeng Yi-Ping), Gao, HL (Gao Hong-Ling), Wang, BQ (Wang Bao-Qiang), Gao, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: hlgao@red.semi.ac.cn   +7 more
core  

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

Advanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung, Mayur Chaudhary, Chia‐Hung Lo, Po‐Chien Lai, You‐Jie Lin, Ruei‐Hong Cyu, Yu‐Ren Peng, Bing‐Ni Gu, Zhao‐Feng Lou, Quynh Thi Le, Yi‐Jen Yu, Yen‐Fu Lin, Min‐Hung Lee, Ying‐Hao Chu, Chang‐Hong Shen, Der‐Hsien Lien, Yu‐Lun Chueh   +16 more
wiley   +1 more source

Very High Channel Conductivity in Low-Defect AlN/GaN High Electron Mobility Transistor Structures

, 2008
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (\u3e1800 cm2/V s) and sheet charge density (\u3e3×1013 cm−2), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire ...
D. C. Look, J. Xie, Hertzog, Brian, B. Hertog, Chow, P. P., Look, Dwight C., A. M. Wowchak, Cui, B., B. Cui, P. P. Chow, Xie, J., A. Osinsky, Look, David C., A. M. Dabiran, Dabiran, A. M., Osinsky, A., Hertog, B., Wowchak, A. M.   +17 more
core   +1 more source