Results 141 to 150 of about 12,413 (305)

CMOS‐Integrated Synaptic Photoreceptor Chip Inspired by Insect Visual Processing

Advanced Science, EarlyView.
CMOS‐integrated Si QDs/ReS2 synaptic photoreceptor array mimics the parallel processing and wavelength‐selective strategy of insect vision. By combining intrinsic ultraviolet‐violet sensitivity with synaptic plasticity, the chip enables frontend sensory redundancy reduction without external filters, offering a scalable pathway toward lowpower ...
Jian Chai, Xinyi Xu, Yue Wang, Xiaochen Wang, Hailiang Wang, Yunfei Xie, Xinwei Zhang, Haoyu Wang, Hao Ning, Jiangming Lin, Yongliang Xie, Qihai Jiang, Baoshi Qiao, Xiaolei Ding, Luyao Ma, Shukai Duan, Zhenyi Ni, Huan Hu, Xin He, Fei Xue, Feichi Zhou, Lingfei Li, Srikrishna Chanakya Bodepudi, Rui Yuan, Bin Yu, Yang Xu   +25 more
wiley   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review. [PDF]

Micromachines (Basel), 2022
Haziq M, Falina S, Manaf AA, Kawarada H, Syamsul M.   +4 more
europepmc   +1 more source

Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection

Crystals
Hydrogen gas sensing is critical for energy storage, industrial safety, and environmental monitoring. However, traditional sensors still face challenges in selectivity, sensitivity, and stability. This work introduces an innovative N-polar GaN/AlGaN high-
Long Ge, Haineng Bai, Yidi Teng, Xifeng Yang   +3 more
doaj   +1 more source

Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor

, 2023
Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low sheet carrier ...
Simin, G., Shur, M.
core  

Thermoelectric Gating Organic Electrochemical Transistors Enabled by Printable Ionogels With n‐p Convertible Thermopower

Advanced Science, EarlyView.
A type of thermoelectric ionogels with convertible n‐p thermopowers are demonstrated with Seebeck coefficients ranging from ‐3.61 to +9.74 mV K−1. Thus, thermoelectric gating organic electrochemical transistor is achieved by employing ionogel as thermoelectric modules and ionic dielectrics simultaneously, paving the road to self‐powered, highly ...
Xingyu Hu, Xinwen Yan, Ling Huang, Xiaohang Zhang, Xuan Cao, Cong Zhang, Qingqing Sun, Hanyu Jia, Xuying Liu   +8 more
wiley   +1 more source

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study. [PDF]

Micromachines (Basel), 2022
Lee JH, Choi JH, Kang WS, Kim D, Min BG, Kang DM, Choi JH, Kim HS.   +7 more
europepmc   +1 more source

Multi-layer graphene FET compact circuit-level model with temperature effects

, 2014
This paper presents a circuit-level model of a dual-gate bilayer and four layer graphene field effect transistor (GFET). The model provides an accurate estimation of the conductance at the charge neutrality point (CNP).
Umoh, Ime Jarlath, Kazmierski, Tom, Al-Hashimi, Bashir   +2 more
core   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source

Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor. [PDF]

Materials (Basel), 2022
Esendag V, Feng P, Zhu C, Ni R, Bai J, Wang T.   +5 more
europepmc   +1 more source

Thin film engineering for transparent thin film transistors

, 2014
Zinc oxide (ZnO) and Indium Gallium Zinc Oxide (IGZO) thin films are of interest as oxide semiconductors in thin film transistor (TFT) applications, due to visible light transparency, and low deposition temperature.
Abusabee, KM
core