Results 161 to 170 of about 48,911 (290)

Multilevel Optical Programming of Intrinsic Vacancies in Solution‐Processed MoS2 Films for Retinomorphic Color Differentiation

Advanced Optical Materials, EarlyView.
Solution‐processed MoS2 films with intrinsic sulfur‐vacancy traps are used to integrate light sensing and memory in a simple two‐terminal pixel. Successive optical pulses program persistent, multilevel conductance states, while oxygen exposure enables rapid erasure.
Jihyun Kim, Jiyong Yoon, Gwang Ya Kim, Kijeong Nam, Jaewon Heo, In Soo Kim, Dongjoon Rhee, Donghee Son, Joohoon Kang   +8 more
wiley   +1 more source

Printable Conductive Hydrogels for Electrochemical Biosensing and Soft Bioelectronic Interfaces

Advanced Science, EarlyView.
Flexible, conductive hydrogels that integrate printability, mechanical tunability, biocompatibility, and electronic performance remain challenging to achieve. Here, we develop 3D‐printable poly(ethylene glycol)–poly(pyrrole)‐ hydrogels with tissue‐like mechanics, high cytocompatibility, and robust electrochemical function.
Lukas Hein, Renan Colucci, Xin Wei, Tsvetomir Ivanov, Katharina Landfester, Ulrike Kraft, Maria Villiou   +6 more
wiley   +1 more source

Modulating Persistent Photoconductivity through Barrier Engineering for High‐performance and Multifunctional Two‐dimensional Optoelectronic Devices

Advanced Science, EarlyView.
Schottky barrier engineering using van der Waals contacts enables effective modulation of persistent photoconductivity (PPC) in optoelectronic devices. A high persistent photoconductivity gain (PPCG) (307.6%) is achieved in a high‐barrier Au/MoS2 junction, supporting photomemory and optoelectronic synaptic behaviors. A low PPCG (4.72%) is achieved in a
Panpan Huo, Xinhao Zhang, Xiangyong Cui, Yeming Wang, Dong Zhou, Baoyuan Man, Il Jeon, Won Jong Yoo, Cheng Yang   +8 more
wiley   +1 more source

The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel)
Chang PH, Huang CR, Liu CH, Lee KW, Chiu HC.   +4 more
europepmc   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc   +1 more source

Surface‐Interaction‐Driven Polarity Switching in II–V Cd3P2 Colloidal Quantum Dots for Infrared Photodiodes

Advanced Science, EarlyView.
. ABSTRACT Colloidal quantum dots (CQDs) based on II–V semiconductors offer attractive optical absorption and carrier transport properties for infrared optoelectronics, yet their device‐relevant electronic behavior remains poorly understood. In particular, Cd3P2 CQDs have been constrained by limited control over nanocrystal growth and carrier polarity.
Ha‐Chi V. Tran, Doeun Shim, Youngsang Park, Mahnmin Choi, Hyeonjun Jeong, Guillaume Bonifas, Liyan Ouyang, Celine Nayral, Fabien Delpech, Joongoo Kang, Sohee Jeong   +10 more
wiley   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit. [PDF]

Micromachines (Basel)
Chang Y, Su Y, Xiao M, Wu J, Zhang X, Chen H.   +5 more
europepmc   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source