Results 151 to 160 of about 12,413 (305)

Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator [PDF]

, 2009
—Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has ...
Chou, Dei-Wei, Li, Yu-Chang, Wei, Chia-Yu, Wang, Yeong-Her, Adriyanto, Feri, Lin, Yu-Ju, Huang, Tong-Jyun   +6 more
core  

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al₂O₃/ZrO₂ Stacked Gate Dielectrics. [PDF]

Materials (Basel), 2022
Huang CY, Mazumder S, Lin PC, Lee KW, Wang YH.   +4 more
europepmc   +1 more source

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy

Nature Communications
Gallium-nitride high-electron-mobility-transistor is an industrial leading contender for high-frequency and high-power radio-frequency applications. However, the record output-power-density has remained stagnant for nearly two decades, limited by high ...
Hong Zhou, Chaoqun Zhang, Kun Zhang, Zifeng Huang, Fang Liu, Min Zhou, Hehe Gong, Shijun Tang, Wenjun Liu, Baiqi Wang, Yaolong Dong, Jinwen Liu, Shutong Zhou, Zuyin Xu, Shuai Wang, Zhihong Liu, Shengrui Xu, Chunfu Zhang, Xinqiang Wang, Han Wang, Yachao Zhang, Zhe Cheng, Tangsheng Chen, Yuhao Zhang, Yue Hao, Jincheng Zhang   +25 more
doaj   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application. [PDF]

Micromachines (Basel), 2023
Guan H, Shen G, Liu S, Jiang C, Wu J.
europepmc   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Improved I_on/I_off Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al_0.5GaN Etch-Stop Layer. [PDF]

Materials (Basel), 2022
Wang HC, Liu CH, Huang CR, Shih MH, Chiu HC, Kao HL, Liu X.   +6 more
europepmc   +1 more source

Bias‐Tunable Two‐Terminal Organic Photodetector for Intelligent Imaging

Advanced Science, EarlyView.
A vertically stacked two‐terminal photodetector with a symmetric donor–acceptor–donor trilayer active exhibits reconfigurable photoresponse with bias‐tunable magnitude and polarity, together with sub‐millisecond response speed and a wide tunable output window.
Sangin Hahn, Sanghoon Park, Seunghyup Yoo   +2 more
wiley   +1 more source

Thermal Spin Coated PbS QD SWIR Imager for Non‐Invasive Glucose Monitoring

Advanced Science, EarlyView.
Thermal spin‐coating enables controlled film formation of PbS quantum dots, leading to denser packing, reduced defect‐assisted transport, and improved carrier extraction. The resulting photodetectors exhibit suppressed dark current, enhanced responsivity, and faster response.
Lei Rao, Shuo Cheng, Qian Chen, Jiankai Wang, Jingrui Ma, Junjie Hao, Xiao Wei Sun, Wei Chen, Cun Zheng Ning, Haodong Tang   +9 more
wiley   +1 more source