Results 151 to 160 of about 48,911 (290)

High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas. [PDF]

Sensors (Basel), 2022
Huang Z, Yan W, Li Z, Dong H, Yang F, Wang X.   +5 more
europepmc   +1 more source

InAlN/GaN-Based High Electron Mobility Transistors

, 2019
The Nitrides became publicly known for the realization of the blue LED, which was rewarded with the Nobel Prize in 2014. Nitride based High Electron Mobility Transistors (HEMTs) have successfully shown their potential for high-power and high-frequency applications in the recent years. Within the GaN HEMT family, different barrier materials -AlGaN,
openaire   +3 more sources

Vision‐Augmented Wearable Interfaces: Bioinspired Approaches for Realistic AI‐Human‐Machine Interaction

Advanced Materials Technologies, EarlyView.
This review presents recent progress in vision‐augmented wearable interfaces that combine artificial vision, soft wearable sensors, and exoskeletal robots. Inspired by biological visual systems, these technologies enable multimodal perception and intelligent human–machine interaction.
Jihun Lee, Gwuidong Ryu, Kisoo Kim, Feng Xu, Won Gu Lee   +4 more
wiley   +1 more source

Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator. [PDF]

Materials (Basel), 2021
Chen YM, Lin HC, Lee KW, Wang YH.
europepmc   +1 more source

High Electron Mobility Transistors Using AlGaN Materials

, 2019
High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN ...
openaire   +3 more sources

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

Advanced Materials Technologies, EarlyView.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim, Jae Won Lee, Wonbeen Jeong, Eun Kwang Lee, Jiyoul Lee   +4 more
wiley   +1 more source

Graphene‐Based Wearable Textile Triboelectric Nanogenerators and Biomechanical Sensors

Advanced Materials Technologies, EarlyView.
This study presents a wearable textile‐based triboelectric nanogenerator (T‐TENG) using sprayed graphene enhanced with a PVA adhesion layer. The graphene‐based electrode demonstrates high electrical conductivity and robustness to multiple bends. The fabricated T‐TENG provides stable and efficient output, with strong responsiveness to biomotion.
Hongyang Dang, Benji Fenech‐Salerno, Antonio Alessio Leonardi, Federico La Barbera, Felice Torrisi   +4 more
wiley   +1 more source

Enhancing Small Molecule Sensing With Aptameric Functionalized Nano Devices

Advanced Materials Technologies, EarlyView.
Unveiling an ultra‐sensitive, non‐invasive neurotransmitter sensor. For the first time, a nanoscale sensor for detecting an important neurotransmitter was demonstrated using micro‐electromechanical systems (MEMS) technology. Our approach utilized field‐effect transistor (FET)‐based readout to enable pico‐molar detection of biomarkers in sweat.
Thi Thanh Ha Nguyen, Cong Minh Nguyen, Quang Thang Trinh, Minh Anh Huynh, Khanh Vinh Ho, Dang Co Pham, Dzung Dao, Sven Ingebrandt, Sina Jamali, Xuan Thang Vu, Nam‐Trung Nguyen, Tuan‐Khoa Nguyen   +11 more
wiley   +1 more source

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

Advanced Optical Materials, EarlyView.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yiran Li, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui‐Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma   +22 more
wiley   +1 more source

Low-Noise InP High Electron Mobility Transistors

, 2019
Indium phosphide high electron mobility transistors (InP HEMTs) represent the state-of-the-art technology for both room and cryogenic temperature low noise amplifiers. For years they have been playing a central role in the most demanding niche applications such as radio astronomy and deep space communications, and they are expected to significantly
openaire   +2 more sources