Advanced Science, EarlyView.Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu +11 more
wiley +1 more source
The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. [PDF]
Micromachines (Basel)Chang PH +4 more
europepmc +1 more source
Fabrication and characterization of AlGaN/GaN High Electron Mobility Transistor
, 2015 As primary material for semiconductor fabrication field, Gallium nitride has attracted lots of interest of scientists and developers due to its unique and exceptional electrical properties such as high thermal conductivity, high electron mobility, high ...
Yang, Chungman
core
Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems
Advanced Electronic Materials, EarlyView.Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang +9 more
wiley +1 more source
Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]
Micromachines (Basel)Chuang YT, Tumilty N, Wu TL.
europepmc +1 more source
, 2004 System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power ...
Mueller, Carl +3 more
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Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors
Advanced Electronic Materials, EarlyView.This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo +11 more
wiley +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture
Advanced Electronic Materials, EarlyView.Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj +8 more
wiley +1 more source
Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit. [PDF]
Micromachines (Basel)Chang Y +5 more
europepmc +1 more source