Results 191 to 200 of about 12,413 (305)
Topological Materials and Related Applications
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang +8 more
wiley +1 more source
Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer. [PDF]
Xiong J, Xie X, Wei J, Sun S, Luo X.
europepmc +1 more source
Silicon Nitride Resistive Memories
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures. [PDF]
Zhao D +9 more
europepmc +1 more source
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram +10 more
wiley +1 more source
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina +10 more
wiley +1 more source
Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics
Compliant bioelectronic systems enable continuous monitoring of chronic disease through soft, stretchable materials and tissue‐conformal designs that support stable electrophysiological, mechanical, and biochemical sensing. Integration of diverse sensing modalities with thoughtful material selection, device architectures, and advanced fabrication ...
Han Kim +7 more
wiley +1 more source
Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure. [PDF]
Mohanty SK, Chen YY, Yeh PH, Horng RH.
europepmc +1 more source
Illuminating the Intracellular World: Breakthroughs in Nanoscale Optoelectronics
This perspective explores optoelectronic biointerfaces spanning macroscale flexible devices to nanoscale intracellular systems, emphasizing their integration across dimensions. It examines capacitive, Faradaic, and photothermal mechanisms that enable light‐driven control of cellular activity and highlights key material and design challenges in ...
Tania Assaf, Menahem Y. Rotenberg
wiley +1 more source

