Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer. [PDF]
Micromachines (Basel)Xiong J, Xie X, Wei J, Sun S, Luo X.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.This study examines metal–perovskite interfaces in 2D (BA)2PbBr4 and (PEA)2PbBr4 using first‐principles and NEGF methods. It compares top‐ and edge‐contact configurations, revealing Schottky barriers in top contacts and ohmic behavior in edge contacts.
Xinbiao Wang +6 more
wiley +1 more source
Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures. [PDF]
Micromachines (Basel)Zhao D +9 more
europepmc +1 more source
Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors
Advanced Electronic Materials, EarlyView.Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim +3 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka +6 more
wiley +1 more source
Organic Thin‐Film Transistors for Neuromorphic Computing
Advanced Electronic Materials, EarlyView.Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure. [PDF]
Sci Rep, 2019 Mohanty SK, Chen YY, Yeh PH, Horng RH.
europepmc +1 more source
High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid
Advanced Electronic Materials, EarlyView.We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie +13 more
wiley +1 more source
A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure. [PDF]
Micromachines (Basel), 2019 Sun Z +5 more
europepmc +1 more source
Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems
Advanced Electronic Materials, EarlyView.Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang +9 more
wiley +1 more source