Results 1 to 10 of about 61,033 (284)

Laser slice thinning of GaN-on-GaN high electron mobility transistors [PDF]

Scientific Reports, 2022
As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal.
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano   +11 more
doaj   +2 more sources

Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors [PDF]

Nanomaterials
Diamond is an attractive substrate candidate for GaN high-electron-mobility transistors (HEMT) to enhance heat dissipation due to its exceptional thermal conductivity.
Huanran Wang, Yifan Liu, Xiangming Dong, Abid Ullah, Jisheng Sun, Chuang Zhang, Yucheng Xiong, Peng Gu, Ge Chen, Xiangjun Liu   +9 more
doaj   +2 more sources

Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors [PDF]

Sensors
We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP).
Adam Rämer, Edoardo Negri, Eugen Dischke, Serguei Chevchenko, Hossein Yazdani, Lars Schellhase, Viktor Krozer, Wolfgang Heinrich   +7 more
doaj   +2 more sources

Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors [PDF]

Micromachines, 2023
Cooling is important for AlGaN/GaN high-electron mobility transistors (HEMTs) performance. In this paper, the advantages and disadvantages of the cooling performance of three cooling schemes: remote cooling (R-cool), near-chip cooling (NC-cool), and chip-
Yunqian Song, Chuan Chen, Qidong Wang, Jianyu Feng, Rong Fu, Xiaobin Zhang, Liqiang Cao   +6 more
doaj   +2 more sources

Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors [PDF]

Nanomaterials, 2019
In this paper, the effect of electron irradiation fluence on direct current (DC) and radio frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated comprehensively.
Shuxiang Sun, Peng Ding, Zhi Jin, Yinghui Zhong, Yuxiao Li, Zhichao Wei   +5 more
doaj   +2 more sources

Cryogenic quantum computer control signal generation using high-electron-mobility transistors [PDF]

Communications Engineering
Multiplexed local charge storage, close to quantum processors at cryogenic temperatures could generate a multitude of control signals, for electronics or qubits, in an efficient manner.
Alberto Ferraris, Eunjung Cha, Peter Mueller, Kirsten Moselund, Cezar B. Zota   +4 more
doaj   +2 more sources

Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors [PDF]

Micromachines
The small-signal S parameters of the fabricated double-finger gate AlGaN/GaN high electron mobility transistors (HEMTs) were measured at various direct current quiescent operating points (DCQOPs).
Guangyuan Jiang, Peng Cui, Chen Fu, Yuanjie Lv, Ming Yang, Qianding Cheng, Yang Liu, Guangyuan Zhang   +7 more
doaj   +2 more sources

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications [PDF]

Micromachines, 2020
Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications.
Y. C. Lin, S. H. Chen, P. H. Lee, K. H. Lai, T. J. Huang, Edward Y. Chang, Heng-Tung Hsu   +6 more
doaj   +2 more sources

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts [PDF]

Micromachines, 2018
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility ...
Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, Marek Wzorek   +10 more
doaj   +2 more sources

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates [PDF]

Micromachines, 2019
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire.
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub   +7 more
doaj   +2 more sources