Results 1 to 10 of about 10,169 (255)

Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors

IEEE Journal of the Electron Devices Society, 2021
In this paper an improved Gray-Wolf-Optimization (GWO) based small-signal modeling is developed. The proposed method is demonstrated by modeling GaN High Electron Mobility Transistors (HEMTs) on SiC and Diamond substrates.
Anwar Jarndal
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Plasma wave resonances in Graphene channels under controlled gate for high frequency applications

Materials Research Express, 2023
Several devices based on 2D materials have become interesting for high-frequency applications especially sensors, amplifiers and modulators of Terahertz frequencies.
AbdelHamid Mahi, Fatima Zohra Mahi, Luca Varani   +2 more
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Characterization of single event effect simulation in InP-based High Electron Mobility Transistors

Results in Physics, 2022
The characteristics and mechanism of single event effects (SEEs) in InP-based High Electron Mobility Transistors (HEMTs) are investigated by technology computer-aided design (TCAD) simulations.
Shuxiang Sun, Linshuang Liu, Haitao Wu, Ruxian Yao, Hongying Mei, Hua Wen, Yinghui Zhong   +6 more
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Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
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Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

IEEE Journal of the Electron Devices Society, 2019
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation.
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton   +9 more
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Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics

Sensors, 2022
Terahertz (THz) imaging is a powerful technique allowing us to explore non-conducting materials or their arrangements such as envelopes, packaging substances, and clothing materials in a nondestructive way.
Vincas Tamošiūnas, Linas Minkevičius, Ignotas Bučius, Domas Jokubauskis, Karolis Redeckas, Gintaras Valušis   +5 more
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Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier

Metrology
GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-
Gilad Orr, Moshe Azoulay, Gady Golan, Arnold Burger   +3 more
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Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

AIP Advances, 2016
We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/
Ji Heon Kim, Tae Ho Kim, Hyunjea Lee, Young Ran Park, Woong Choi, Cheol Jin Lee   +5 more
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Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse

IEEE Journal of the Electron Devices Society, 2021
The dynamic on-resistance increase during power switching is one of the challenges of GaN-based HEMTs (high-electron-mobility transistors) for power electronic applications.
Ji-Xuan Yang, Dai-Jie Lin, Yuh-Renn Wu, Jian-Jang Huang   +3 more
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Quantifying the Plasmonic Generation Rate of Non‐Thermal Hot Carriers with an AlGaN/GaN High‐Electron‐Mobility Transistor

Advanced Science, 2021
Plasmonic generation of hot carriers in metallic nanostructures has attracted much attention due to its great potential in several applications. However, it is highly debated whether the enhancement is due to the hot carriers or the thermal effect. Here,
Chun‐Yu Li, Chi‐Ching Liu, Wei‐Chih Lai, Yung‐Chiang Lan, Yun‐Chorng Chang   +4 more
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