Results 41 to 50 of about 61,033 (284)
Semiconductor heterostructures hosting two-dimensional electron gases are widely used today in high-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the ...
L. L. Lev +12 more
doaj +1 more source
High intensity study of THz detectors based on field effect transistors
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and ...
But, Dmytro B. +8 more
core +1 more source
A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing +9 more
wiley +1 more source
Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3 ...
Arehart, Aaron R. +10 more
core +1 more source
Laser‐Induced Graphene from Waste Almond Shells
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova +9 more
wiley +1 more source
Photoswitching Conduction in Framework Materials
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez +4 more
wiley +1 more source
AlGaN based high electron mobility transistors
High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two- dimensional electron gas formed at the interface of AlGaN and GaN ...
openaire +2 more sources
Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors [PDF]
This paper presents experimental and simulation analysis of an Ω-shaped silicon junctionless nanowire field-effect transistor (JL-NWT) with gate lengths of 150 nm and diameter of the Si channel of 8 nm.
Asenov, Asen +5 more
core +1 more source
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with carrier mobility ...
Bajaj, Mohit. +7 more
core +2 more sources

