Results 51 to 60 of about 16,548,618 (294)

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance

IEEE Journal of the Electron Devices Society, 2018
A novel wet etch process for fabrication of large-area AlGaN/GaN membranes is reported, along with an evaluation of membrane-high electron mobility transistor (HEMT) electrothermal performance up to 1.9 W/mm. Hall measurements showed negligible post-etch
Marko J. Tadjer, Peter E. Raad, Pavel L. Komarov, Karl D. Hobart, Tatyana I. Feygelson, Andrew D. Koehler, Travis J. Anderson, Anindya Nath, Bradford Pate, Fritz J. Kub   +9 more
doaj   +1 more source

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

Advanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung, Junghyun Koo, Hongseung Lee, Donghwan Kim, Dongho Won, Weideng Sun, Jaewook Yoo, Minah Park, Seohyeon Park, Seongbin Lim, Joonsung Lee, Sungjune Park, Sangmoon Yoon, Tae Wan Kim, Bharat Jalan, Gang Qiu, Kiyoung Lee, Hagyoul Bae   +17 more
wiley   +1 more source

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Advanced Electronic Materials
Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required.
Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis   +13 more
doaj   +1 more source

Research progress on irradiation effect of InP-based high electron mobility transistors

He jishu
Indium phosphide (InP)-based high electron mobility transistors (HEMTs) have been widely adopted in space communication systems such as satellites, manned spaceflight, and deep space exploration due to their high frequency and gain, and low noise ...
FANG Renfeng, ZHOU Shuxing, CAO Wenyu, WEI Yanfeng, WANG Jingyang, LI Shusen, YAN Jiasheng, LIANG Guijie   +7 more
doaj   +1 more source

Organic transistors based on pentacene and dibenzothiophene derivatives [PDF]

, 2008
This thesis is concerned with the fabrication and characterisation of organic thin film transistors. Initially, pentacene thin films were investigated, with results comparable to those found in published literature.
Kolb, Daniel
core  

Anisotropic Phonon Dynamics and Directional Transport in Actinide Van der Waals Semiconductor Uranium Triselenide

Advanced Functional Materials, EarlyView.
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll, Valentino Jadriško, Sourav Dey, Nassima Benchtaber, Kalyan Sarkar, Borna Radatović, Jan Luxa, Fedor Lipilin, Kseniia Mosina, Vojtěch Kundrát, Jakub Zalesak, Jana Vejpravová, Martin Žáček, Szymon J. Zelewski, Nikolas Antonatos, Christoph Gadermaier, José J. Baldoví, Zdeněk Sofer   +17 more
wiley   +1 more source

Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications [PDF]

, 2010
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems.
Bambery, Rohan
core