Results 51 to 60 of about 61,033 (284)
Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications [PDF]
, 2017 In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWTs), which may have applications at 5nm CMOS technology.
Adamu-Lema, F. +3 more
core +1 more source
Advanced Functional Materials, EarlyView.Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2018 A novel wet etch process for fabrication of large-area AlGaN/GaN membranes is reported, along with an evaluation of membrane-high electron mobility transistor (HEMT) electrothermal performance up to 1.9 W/mm. Hall measurements showed negligible post-etch
Marko J. Tadjer +9 more
doaj +1 more source
AlGaN Based High Electron Mobility Transistors
, 2019 High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN ...
Yu Yun, Xiejia
openaire +3 more sources
, 2019 Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO)
Bhowmick, Somnath +3 more
core +1 more source
Modeling of CMOS devices and circuits on flexible ultrathin chips [PDF]
, 2017 The field of flexible electronics is rapidly evolving. The ultrathin chips are being used to address the high-performance requirements of many applications.
Dahiya, Ravinder +3 more
core +1 more source
Bio‐Inspired Molecular Events in Poly(Ionic Liquids)
Advanced Functional Materials, EarlyView.Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley +1 more source
Research progress on irradiation effect of InP-based high electron mobility transistors
He jishuIndium phosphide (InP)-based high electron mobility transistors (HEMTs) have been widely adopted in space communication systems such as satellites, manned spaceflight, and deep space exploration due to their high frequency and gain, and low noise ...
FANG Renfeng +7 more
doaj +1 more source
Graphene Field Effect Transistors: Diffusion-Drift Theory [PDF]
, 2011 Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed.
Zebrev, Gennady I.
core +2 more sources
Advanced Functional Materials, EarlyView.A Complexation‐Mediated Diffusion‐Limited Growth (CMDLG) framework is established to rationalize the anisotropic growth of lead‐free perovskites. Integrating coordination chemistry with mass transport kinetics, this study theoretically derives and experimentally validates that stable iodocuprate complexes induce a diffusion‐limited regime.
Hyunmin Lee +5 more
wiley +1 more source