Results 71 to 80 of about 61,033 (284)

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances, 2019
This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D. S. Rawal, Seema Vinayak, Manoj Saxena   +6 more
doaj   +1 more source

Approaching isotropic charge transport of n-type organic semiconductors with bulky substituents

Communications Chemistry, 2021
n-type organic semiconductors exhibiting two-dimensional isotropic charge transport are rarely reported. Here the authors show that using bulky substituents, BQQDI demonstrates near-isotropic charge transport, resilience to dynamic disorder, as well as ...
Craig P. Yu, Naoya Kojima, Shohei Kumagai, Tadanori Kurosawa, Hiroyuki Ishii, Go Watanabe, Jun Takeya, Toshihiro Okamoto   +7 more
doaj   +1 more source

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

, 2010
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance.
A Javey, Alexandra C. Ford, Ali Javey, D-H Kim, D-H Kim, D-H Kim, E Yablonovitch, Elena Plis, G Balakrishnan, GC DeSalvo, GK Celler, H Yonezu, H-C Yuan, Ha Sul Kim, Hui Fang, Hyunhyub Ko, J Yoon, K Martens, K Yoh, Kartik Ganapathi, Kuniharu Takei, M Heyns, M Lundstrom, M Lundstrom, M Radosavljevic, M Yokoyama, MA Meitl, Morten Madsen, MP Mikhailova, N Melosh, P Javorka, Paul W. Leu, PH-S Wong, R Chau, Rehan Kapadia, Sanjay Krishna, Sayeef Salahuddin, Steven Chuang, Szu-Ying Chen, T Bryllert, TN Theis, Y Liu, Y-L Chueh, YQ Wu, Yu-Lun Chueh   +44 more
core   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

Fabrication and Characterization of Controllable Grain Boundary Arrays in Solution Processed Small Molecule Organic Semiconductor Films

, 2012
We have produced solution-processed thin films of 6,13-bis(triisopropyl-silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus.
Anthony, John E., Headrick, Randall L., Wo, Songtao   +2 more
core   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

High performance metamaterials-high electron mobility transistors integrated terahertz modulator

Optics Express, 2017
We demonstrate an electric control metamaterials-high electron mobility transistors (HEMTs) integrated terahertz (THz) modulator whose switching ability is developed by utilizing the symmetric quadruple-split-ring resonators (SRRs) metamaterial configuration and operating voltage is reduced by incorporating the HEMT elements.
Zhen, Zhou, Siqi, Wang, Yue, Yu, Yongli, Chen, Lishuang, Feng   +4 more
openaire   +2 more sources

Kinetic Regimes of Hydrogen Absorption in Thin Films

Advanced Functional Materials, EarlyView.
Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco, Sabine Pütter, Yury N. Khaydukov, Luca Silvi, Mariano A. Paulin, Attila Csik, Thomas Keller, Bernhard Keimer   +7 more
wiley   +1 more source

Structural and Chemical Engineering of Sub‐Nanochannel Membranes Toward Ion Selectivity

Advanced Functional Materials, EarlyView.
This review summarizes recent advances in structural and chemical engineering of sub‐nanochannels for ion selectivity. We first introduce fundamental ion transport mechanisms within sub‐nanochannels, followed by strategies to tune pore size, geometry, and surface functionalities, categorized into charge‐based, ion‐recognition, hydrophilic bonding, and ...
Yuyu Su, Huacheng Zhang, Tamar L. Greaves, Qi Han, Weiwei Lei, Dan Liu   +5 more
wiley   +1 more source