Results 71 to 80 of about 10,169 (255)

Weaving Intelligence: Thermally Drawn Multimaterial Fibers Toward AI‐Enabled Smart Textiles

Advanced Materials, EarlyView.
Thermally drawn multimaterial fibers are rapidly advancing as intelligent structural units for next‐generation smart textiles. Integrating multimaterial architectures with neuromorphic and spiking‐neural‐network principles enables fabrics that can sense, compute, and adapt autonomously.
Vuong Dinh Trung, Jiaxiang Yi, Hieu Nguyen‐Duc, Tien Nu Hoang Lo, Weili Zhao, Chaoqun Dong, Fabien Sorin, Baris Caglar, Lei Wei, Tung Nguyen‐Dang   +9 more
wiley   +1 more source

An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied Physics Letters, 2016
An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 
Albert G. Baca, Andrew M. Armstrong, Andrew A. Allerman, Erica A. Douglas, Carlos A. Sanchez, Michael P. King, Michael E. Coltrin, Torben R. Fortune, Robert J. Kaplar   +8 more
openaire   +2 more sources

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates

Applied Physics Express
High voltage (∼2 kV) Al _0.64 Ga _0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm ^2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage.
Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta   +7 more
doaj   +1 more source

Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistors

Nano Materials Science
Gallium Nitride (GaN) high electron mobility transistors (HEMTs) have garnered significant attention in micro/millimeter wave and terahertz technologies due to their unique material properties, including a large bandgap, a strong electron mobility, a ...
Shili Xiang, Qichao Ding, Jun Liu, Hao Hu, Bo Zhao, Shuangzan Lu, Fan Huang, Joao Cunha, José Rodrigues, Zhipeng Yu, Hong Yin   +10 more
doaj   +1 more source

Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

AIP Advances, 2016
Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs).
W. A. Sasangka, G. J. Syaranamual, R. I. Made, C. V. Thompson, C. L. Gan   +4 more
doaj   +1 more source

Graded-Gap Technology Formatting of High-Speed GaAs – Transistor Structures as the Basis for Modern of Large Integrated Circuits

Фізика і хімія твердого тіла, 2016
Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large integrated circuits structures on Si-
S. P. Novosyadlyy, A. M. Bosats'kyy
doaj   +1 more source

Intimate Interaction Between Nucleic Acid and Conjugated Polymers in Organic Electrochemical Transistors Enables Ultrasensitive Biomarker Detection

Advanced Materials, EarlyView.
The intimate interaction between negatively charged RNA molecules and conjugated polymers in organic electrochemical transistors (OECTs) in aqueous electrolytes is investigated. It demonstrates that RNA binding reduces the volumetric capacitance of the polymer channel, enabling the development of an ultrasensitive biosensing platform capable of ...
Hong Liu, Naixiang Wang, Anneng Yang, Jiajun Song, Li Li, Iain McCulloch, Helen Ka‐wai Law, Feng Yan   +7 more
wiley   +1 more source

Comparative Study of T-Gate Structures in Nano-Channel GaN-on-SiC High Electron Mobility Transistors

Engineering Proceedings
We investigated the radio frequency (RF) performance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on silicon carbide substrates, featuring two distinct T-shaped gate structures. A comparative analysis between a silicon nitride (SiNx)
Yu-Chen Liu, Dian-Ying Wu, Hung-Cheng Hsu, I-Hsuan Wang, Meng-Chyi Wu   +4 more
doaj   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source