Results 71 to 80 of about 16,548,618 (294)

High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers

, 2022
S.1-6Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated.
Brückner, Peter, Granzner, R., Alsharef, M., Quay, Rüdiger, Ambacher, Oliver, Aidam, Rolf, Godejohann, B.-J., Schwierz, F., Ture, Erdin   +8 more
core   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors [PDF]

, 1996
Integration of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and high electron mobility transistors (HEMT's) is demonstrated by growing an HBT on the top of a HEMT. A current gain of 60.
Yang, YF, Yang, ES, Hsu, CC
core   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

Thin film engineering for transparent thin film transistors [PDF]

, 2014
Zinc oxide (ZnO) and Indium Gallium Zinc Oxide (IGZO) thin films are of interest as oxide semiconductors in thin film transistor (TFT) applications, due to visible light transparency, and low deposition temperature.
Abusabee, KM
core  

Correlated Charge Transport in an Organic Coulomb Glass

Advanced Materials, EarlyView.
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler, Heinz Bässler, Harald Oberhofer, Anna Köhler   +3 more
wiley   +1 more source

Charge-carrier velocity distributions in high-mobility polymer dual-gate thin-film transistors

, 2012
We report charge-carrier velocity distributions in high-mobility polymer thin-film transistors (PTFTs) employing a dual-gate configuration. Our time-domain measurements of dual-gate PTFTs indicate higher effective mobility as well as fewer low-velocity ...
Sonar, P., Ha, T. J., Dodabalapur, A.
core   +1 more source

Thermodynamic Limits to Molecular Doping in Conjugated Polymers: A Perspective on Phase Behavior and Miscibility

Advanced Materials, EarlyView.
Molecular doping of conjugated polymers is fundamentally constrained by thermodynamic phase behavior. This Perspective reframes doping efficiency and stability in terms of miscibility limits, binodals, and solvus boundaries, highlighting the role of effective interaction parameters and charge transfer.
Somayeh Kashani, Justin Neu, Sung‐Joo Kwon, Runqio Song, Zixuan Chen, Tajah Trapier, Paschalis Gkoupidenis, David Ginger, Wei You, Jasper J. Michels, Harald Ade   +10 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Hot LO phonon-induced RF nonlinearity in GaN high-electron-mobility transistors [PDF]

APL Electronic Devices
Hot longitudinal optical (LO) phonons in GaN have recently been identified as a major factor degrading the DC performance of GaN high-electron-mobility transistors (HEMTs) by 30%–60% despite their ultrafast decay. However, their impact on large-signal RF
Ankan Ghosh Dastider, Matt Grupen, Nicholas C. Miller, Shaloo Rakheja   +3 more
doaj   +1 more source