Results 81 to 90 of about 16,548,618 (294)

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

Advanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair, Hrisheekesh Thachoth Chandran, Karl Leo, Hans Kleemann   +3 more
wiley   +1 more source

Organic Materials of Tomorrow: Horizons of Artificial Intelligence

Advanced Materials, EarlyView.
This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena, J. Terence Blaskovits, Kun‐Han Lin, Denis Andrienko   +3 more
wiley   +1 more source

High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface

AIP Advances, 2016
A perovskite oxide, BaSnO3, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research.
Kohei Fujiwara, Kazuki Nishihara, Junichi Shiogai, Atsushi Tsukazaki   +3 more
doaj   +1 more source

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

, 2009
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology.
Piner, Edwin L., Palacios, Tomas, Lu, Bin   +2 more
core   +1 more source

Processing organic semiconductors [PDF]

, 2010
PhDIn recent years, there has been a considerable interest in organic semiconducting materials due to their potential to enable, amongst other things, low-cost flexible opto-electronic applications, such as large-area integrated circuitry boards, light ...
Baklar, Mohammed Adnan
core   +3 more sources

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

ScAlN/GaN-on-Si (111) HEMTs for RF applications

Applied Physics Express
ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher two-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN.
Seif El Whibi, Nagesh Bhat, Yassine Fouzi, Nicolas De France, Jean-Claude De Jaeger, Zahia Bougrioua, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq   +9 more
doaj   +1 more source

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

, 2009
In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I [subscript Dmax ...
Jimenez, Jose L., Chowdhury, Uttiya, Chou, Tso-Min, Joh, Jungwoo, del Alamo, Jesus A., Tserng, Hua-Quen   +5 more
core   +1 more source

N-polar GaN/AlGaN/GaN high electron mobility transistors [PDF]

, 2007
We describe the development of N-polar GaN-based high electron mobility transistors grown by N2 plasma-assisted molecular beam epitaxy on C-face SiC substrates.
Man Hoi Wong, Mishra, Umesh K., Mishra, U. K., CHINI, Alessandro, James S. Speck, Rajan, S., Speck, James S., Wong, M. H., Alessandro Chini, Umesh K. Mishra, Rajan, Siddharth, Speck, J. S., Wong, Man Hoi, Siddharth Rajan   +13 more
core   +1 more source

“Smelltronics”—From Gas to Smell Sensing

Advanced Materials, EarlyView.
The emerging field of smelltronics, encompassing sensing technologies for complex volatile organic compounds, holds significant potential for extracting valuable chemical information. It facilitates the noninvasive, real‐time monitoring of humans, food, and the environment.
Takeshi Ono, Tsunaki Takahashi, Jiangyang Liu, Haruka Honda, Zeng Jing, Wataru Tanaka, Takuro Hosomi, Takeshi Yanagida   +7 more
wiley   +1 more source