Results 81 to 90 of about 61,033 (284)

An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied Physics Letters, 2016
An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 
Albert G. Baca, Andrew M. Armstrong, Andrew A. Allerman, Erica A. Douglas, Carlos A. Sanchez, Michael P. King, Michael E. Coltrin, Torben R. Fortune, Robert J. Kaplar   +8 more
openaire   +2 more sources

High quality sandwiched black phosphorus heterostructure and its quantum oscillations

, 2014
Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices.
Cai, Yuan, Chen, Xiaolong, Han, Tianyi, Han, Yu, He, Yuheng, Wang, Lin, Wang, Ning, Wu, Yingying, Wu, Zefei, Xu, Shuigang, Ye, Weiguang   +10 more
core   +1 more source

Selenium‐Incorporated Polymerized Nonfullerene Acceptors/SWCNT Composites with Polymer‐Assisted n‐Doping for High‐Performance Organic Thermoelectrics

Advanced Functional Materials, EarlyView.
Selenium‐incorporated polymerized nonfullerene acceptor PCB2Se forms a strong supramolecular complex with SWCNTs, enabling a record‐high zT of 0.29. Sequential N‐DMBI doping, mediated through a polymer‐assisted electron‐transfer pathway, successfully converts the PCB2Se/SWCNT composite into an efficient n‐type material with an impressive power factor ...
Chi‐Chun Tseng, Che‐An Chou, Chi Chang, Li‐Lun Yeh, Chien‐Yi Ku, Jhih‐Min Lin, Shih‐Huang Tung, Cheng‐Liang Liu, Yen‐Ju Cheng   +8 more
wiley   +1 more source

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

, 2013
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that
Adam T. Neal, Alam K., Baugher B. W. H., Berger H. H., Das S., Du Y., Guo J., Han Liu, Heinze S., Jun Lou, Liu H., Liu H., Liu H., Liu H., Mak K. F., Mengwei Si, Nagashio K., Najmaei S., Neal A. T, Peide D. Ye, Pulickel M. Ajayan, Radisavljevic B., Schroder D. K., Sina Najmaei, Splendiani A., Taur Y., Tung R. T., Wang H., Yexin Deng, Yoon Y., Yuchen Du   +30 more
core   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

Advanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo, Artur Ciesielski, Paolo Samorì   +2 more
wiley   +1 more source

An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors

, 2018
In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the concept of virtual source charge calculation to capture the effect of both
Haratipour, Nazila, Koester, Steven J., Rakheja, Shaloo, Yarmoghaddam, Elahe   +3 more
core   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface

AIP Advances, 2016
A perovskite oxide, BaSnO3, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research.
Kohei Fujiwara, Kazuki Nishihara, Junichi Shiogai, Atsushi Tsukazaki   +3 more
doaj   +1 more source

Wide-bandwidth high-resolution search for extraterrestrial intelligence [PDF]

Research accomplished during the third 6-month period is summarized. Research covered the following: dual-horn antenna performance; high electron mobility transistors (HEMT) low-noise amplifiers; downconverters; fast Fourier transform (FFT) array; and ...
Horowitz, Paul
core   +1 more source

Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors

Advanced Functional Materials, EarlyView.
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee, Hyoik Jang, Myeongjin An, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source