Results 101 to 110 of about 10,169 (255)

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source

High‐Performance 2D C‐Axis‐Aligned Crystalline Oxide Semiconductor Heterostructure Transistors via Aqueous Solution Deposition

Advanced Electronic Materials
2D wide bandgap oxide semiconductors with sub‐5 nm thickness have recently attracted tremendous attention owing to their unique electronic characteristics.
Wangying Xu, Junling Zhou, Jierui Lin, Chen Wu, Yanwei Li, Shuqiong Lan   +5 more
doaj   +1 more source

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Chae M, Kim H.
europepmc   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Study of MoN gate impact on GaN high electron mobility transistor

Electronics Letters
In this letter, molybdenum nitride (MoN) gate AlGaN/GaN HEMT has been investigated with MoN developed in various physical vapour deposition (PVD) conditions.
Lixing Zhang, BeiBei Lv, Xu Ding, Faxin Yu, Jiongjiong Mo   +4 more
doaj   +1 more source

Impact of Charge-Trapping Effects on Reliability Instability in Al_xGa_1-xN/GaN High-Electron-Mobility Transistors with Various Al Compositions. [PDF]

Materials (Basel), 2023
Amir W, Chakraborty S, Kwon HM, Kim TW.
europepmc   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Enhancing Device Performance with High Electron Mobility GeSn Materials

Advanced Electronic Materials
As transistors continue to shrink, the need to replace silicon with materials of higher carrier mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys, stand out for their high electron and hole mobilities, making them ...
Yannik Junk, Omar Concepción, Marvin Frauenrath, Jingxuan Sun, Jin Hee Bae, Florian Bärwolf, Andreas Mai, Jean‐Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing‐Tai Zhao   +10 more
doaj   +1 more source

Analytical and Physical Investigation on Source Resistance in In_xGa_1-xAs Quantum-Well High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Yoo JH, Lee IG, Tsutsumi T, Sugiyama H, Matsuzaki H, Lee JH, Kim DH.   +6 more
europepmc   +1 more source