Results 101 to 110 of about 16,548,618 (294)

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

, 2001
A Shubnikov-de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K.
Jiang CP,Chinese Acad Sci,Shanghai Inst Tech Phys,Natl Lab Infrared Phys,Shanghai 200083,Peoples R China., Cui LJ, Guo SL, Zeng YP, Huang ZM, Jiang CP, Zhu ZP, Chu JH, Wang BQ   +8 more
core  

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Advanced Materials, EarlyView.
Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert, Salva Salmani‐Rezaie, Sankalpa Hazra, Utkarsh Saha, Maya Ramesh, Aiden Ross, Betül Pamuk, Long‐Qing Chen, David A. Muller, Darrell G. Schlom, Venkatraman Gopalan, Kaveh Ahadi   +11 more
wiley   +1 more source

Graded-Gap Technology Formatting of High-Speed GaAs – Transistor Structures as the Basis for Modern of Large Integrated Circuits

Фізика і хімія твердого тіла, 2016
Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large integrated circuits structures on Si-
S. P. Novosyadlyy, A. M. Bosats'kyy
doaj   +1 more source

Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors

, 2000
Defects and morphologies are presented in this paper as revealed with transmission electron microscope (TEM) in the In(0.8)G(0.2)As/InAlAs heterostructure on InP(001) for high-electron-mobility transistors application.
Wu J, Lin F, Wu J,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.   +2 more
core  

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors

In this study, effect of post-fabrication annealing (PFA) on the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) has been investigated.
Cui, P, Xu, M, Wang, L, Han, J, Luo, X, Chen, S, Dai, J, Xu, X, Linewih, H, Cheong, KY, Sun, J   +10 more
core   +1 more source

Metal Oxide Nano‐Interface Boosting the Deep Ultraviolet Adjustable Noise‐Filtering In‐Sensor Computing

Advanced Materials, EarlyView.
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju, Peng Li, Jingsong Yuan, Boyuan Yu, Bin Han, Yusheng Chen, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì   +9 more
wiley   +1 more source

Resonant tunnelling diodes and high electron mobility transistors integrated on GaAs substrates

, 2006
A1GaAs/1nGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure.
Huang, YL, Chinese Acad Sci, Inst Semicond, Natl Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail: hy196@red.semi.ac.cn, Ma L, Zeng YP, Wang LC, Huang YL, Yang FH   +5 more
core  

High Electron Mobility in Ladder Polymer Field-Effect Transistors

, 2016
Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions ...
Amit Babel (2670349), Samson A. Jenekhe (1292052)   +1 more
core   +1 more source