Results 121 to 130 of about 16,548,618 (294)
Advanced Materials, EarlyView.Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh +5 more
wiley +1 more source
, 2007 Magnetotransport properties of In-0.53 GaAs/In-0.52 AlAs high electron mobility transistor (HEMT) structures with different channel thickness of 10-35 nm have been investigated in magnetic fields up to 13 T at 1.4 K.
Zhu, ZP (Zhu Zhan-Ping) +7 more
core
Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography
Advanced Materials, EarlyView.A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh +9 more
wiley +1 more source
, 2014 We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In0.17Al0.83N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111).
Dolmanan, S. B. +6 more
core +1 more source
Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors
Advanced Materials, EarlyView.We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian +23 more
wiley +1 more source
Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors. [PDF]
Micromachines (Basel), 2023 Wang Z +5 more
europepmc +1 more source
Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics
Advanced Materials, EarlyView.Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee +9 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.Imide substitution with bulky 2,6‐isopropylphenyl groups induces perylene diimide to self‐assemble on Ag(111) into a monolayer with two coexisting adsorption heights. Molecules closer to the substrate gain metallic character due to charge transfer from the metal, while farther ones remain decoupled and semiconducting.
Giacomo Agnesod +12 more
wiley +1 more source
AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers. [PDF]
Micromachines (Basel), 2023 Lin YS, Lu CC.
europepmc +1 more source
RF Power Degradation of GaN High Electron Mobility Transistors
, 2010 We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time.
Joh, Jungwoo +3 more
core +1 more source