Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]
Materials (Basel)Pu T, Li X, Li L, Ao JP.
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Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array. [PDF]
Materials (Basel), 2021 Lee HY, Ju YH, Chyi JI, Lee CT.
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Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics
Advanced Science, EarlyView.Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai +3 more
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Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]
ACS Appl Electron MaterKim DW +10 more
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Advanced Science, EarlyView.Rubrene microcrystals, forming two distinct sector types, are investigated using photoemission electron spectroscopy. The two sectors exhibit a built‐in charge landscape, arising from anisotropic conductivities. Upon excitation with UV light, the diamond‐shaped sectors accumulate significant charge, whereas the triangular sectors remain essentially ...
Moha Naeimi, Ingo Barke, Sylvia Speller
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Advanced Science, EarlyView.Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu +11 more
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Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array. [PDF]
Materials (Basel), 2021 Lee HY +4 more
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Advanced Science, EarlyView.Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim +22 more
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Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]
Micromachines (Basel)Ham G +6 more
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Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems
Advanced Electronic Materials, EarlyView.Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang +9 more
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