Results 121 to 130 of about 61,033 (284)

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Wang Z, Nan J, Tian Z, Liu P, Wu Y, Zhang J.   +5 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Structural and electrical properties of AlGaN/GaN heterostructures grown on 2°-off-axis 4H–SiC epilayers

APL Materials
This paper reports on the structural and electrical properties of AlGaN/GaN heterostructures grown onto 2°-off-axis silicon carbide (4H–SiC) epitaxial layers. The quality of the grown heterostructures was assessed by a combination of different analytical
F. Roccaforte, G. Greco, C. Bongiorno, S. Di Franco, P. Fiorenza, F. Giannazzo, M. Mauceri, A. Severino, F. Iucolano, P. Prystawko, M. Krysko, M. Leszczynski   +11 more
doaj   +1 more source

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO₂ as Passivation and Dielectric Layers. [PDF]

Micromachines (Basel), 2023
Lin YS, Lu CC.
europepmc   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study. [PDF]

Micromachines (Basel), 2023
Choi JH, Kang WS, Kim D, Kim JH, Lee JH, Kim KY, Min BG, Kang DM, Kim HS.   +8 more
europepmc   +1 more source

Light‐Programmable Interfaces: From Molecular Photoswitching to Adaptive Membrane Separations

Advanced Materials Interfaces, EarlyView.
This review advances an interface‐centered framework for light‐responsive membranes, linking molecular photoswitches (azobenzene (AZO), spiropyran (SP), diarylethene (DAE), donor–acceptor Stenhouse adducts (DASA), photoacid) to integration strategies in polymeric, porous, self‐assembled, and mixed‐matrix systems.
Liangliang Zhang, Senlin Gu, Jianyang Zhao, Xiaojuan Hao, Lu Hua Li, Jihua Li, Lingxue Kong   +6 more
wiley   +1 more source

High‐Performance 2D C‐Axis‐Aligned Crystalline Oxide Semiconductor Heterostructure Transistors via Aqueous Solution Deposition

Advanced Electronic Materials
2D wide bandgap oxide semiconductors with sub‐5 nm thickness have recently attracted tremendous attention owing to their unique electronic characteristics.
Wangying Xu, Junling Zhou, Jierui Lin, Chen Wu, Yanwei Li, Shuqiong Lan   +5 more
doaj   +1 more source

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study. [PDF]

Micromachines (Basel), 2023
Kang WS, Choi JH, Kim D, Kim JH, Lee JH, Min BG, Kang DM, Choi JH, Kim HS.   +8 more
europepmc   +1 more source

Microwave Absorption for Detection of Dirac Fermions in SnTe Films

Advanced Materials Interfaces, EarlyView.
Microwave absorption can detect Dirac fermions in samples exposed to the atmosphere. Results showed that although topological surface states are robust against environmental degradation, they are not detectable by electrical transport measurements. Hence, microwave absorption can detect Dirac fermions even in samples whose surfaces have deteriorated ...
Wellington P. do Prado, Jorge A. Navarro‐Giraldo, Muhammad Tahsin, Vinicius T. Santana, Eduardo Abramof, Paulo H. O. Rappl, Suelen de Castro, Marcelos L. Peres, Petr Neugebauer   +8 more
wiley   +1 more source