Results 131 to 140 of about 16,548,618 (294)

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study. [PDF]

Micromachines (Basel), 2023
Choi JH, Kang WS, Kim D, Kim JH, Lee JH, Kim KY, Min BG, Kang DM, Kim HS.   +8 more
europepmc   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study. [PDF]

Micromachines (Basel), 2023
Kang WS, Choi JH, Kim D, Kim JH, Lee JH, Min BG, Kang DM, Choi JH, Kim HS.   +8 more
europepmc   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Structural and electrical properties of AlGaN/GaN heterostructures grown on 2°-off-axis 4H–SiC epilayers

APL Materials
This paper reports on the structural and electrical properties of AlGaN/GaN heterostructures grown onto 2°-off-axis silicon carbide (4H–SiC) epitaxial layers. The quality of the grown heterostructures was assessed by a combination of different analytical
F. Roccaforte, G. Greco, C. Bongiorno, S. Di Franco, P. Fiorenza, F. Giannazzo, M. Mauceri, A. Severino, F. Iucolano, P. Prystawko, M. Krysko, M. Leszczynski   +11 more
doaj   +1 more source

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Hot-electron temperature (T-e) in InAlN/GaN high-electron-mobility transistors (HEMTs) was determined using electroluminescence spectroscopy as a function of gate voltage and correlated with the Te distribution determined by hydrodynamic simulations ...
Palankovski, Vassil, Tapajna, Milan, Killat, Nicole, Kuball, Martin, Grandjean, Nicolas, Kuzmik, Jan, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois   +8 more
core   +1 more source

Advanced Manufacturing of Composite‐Based Systems for Energy Applications

Advanced Materials Technologies, EarlyView.
Advanced manufacturing enables the integration of polymers, ceramics, metal oxides, and composites into architected microstructures with tailored transport pathways. By coupling material selection, manufacturing strategy, and structural design, multifunctional energy systems can simultaneously improve electrochemical performance, thermal management ...
Sri Vaishnavi Thummalapalli, Dhanush Patil, Libin Yang, M. Taylor Sobczak, Anshul Kulkarni, Xiao Sun, Arunachalam Ramanathan, Tiantian Li, Ramaraja P. Ramasamy, Jason J. Locklin, Yanyu Chen, Xianqiao Wang, Arunachala Mada Kannan, Kenan Song   +13 more
wiley   +1 more source

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Chae M, Kim H.
europepmc   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source