Results 131 to 140 of about 61,033 (284)

Study of MoN gate impact on GaN high electron mobility transistor

Electronics Letters
In this letter, molybdenum nitride (MoN) gate AlGaN/GaN HEMT has been investigated with MoN developed in various physical vapour deposition (PVD) conditions.
Lixing Zhang, BeiBei Lv, Xu Ding, Faxin Yu, Jiongjiong Mo   +4 more
doaj   +1 more source

Topological Point Defects in SmC* Liquid Crystals Under Mechanical Disturbance

Advanced Materials Interfaces, EarlyView.
Tangetial air jet shear inducess island formation and nucleates topological point defects in uniform SmC films. Island bounded by edge dislocation loops shrink and transform into isolated point defects under continued shear. Mechanical perturbatio provides a controllable route for defect engineering in smectric liquid crystal thin films.
Gunganist Kongklad, Vandana Molahalli, Apichart Pattanaporkratana, Nattaporn Chattham   +3 more
wiley   +1 more source

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Chae M, Kim H.
europepmc   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Enhancing Device Performance with High Electron Mobility GeSn Materials

Advanced Electronic Materials
As transistors continue to shrink, the need to replace silicon with materials of higher carrier mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys, stand out for their high electron and hole mobilities, making them ...
Yannik Junk, Omar Concepción, Marvin Frauenrath, Jingxuan Sun, Jin Hee Bae, Florian Bärwolf, Andreas Mai, Jean‐Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing‐Tai Zhao   +10 more
doaj   +1 more source

Impact of Charge-Trapping Effects on Reliability Instability in Al_xGa_1-xN/GaN High-Electron-Mobility Transistors with Various Al Compositions. [PDF]

Materials (Basel), 2023
Amir W, Chakraborty S, Kwon HM, Kim TW.
europepmc   +1 more source

Characterization and Design Framework for Micro‐ and Nanoscale Printed Metal Interconnects in Hybrid Electronic Systems

Advanced Materials Technologies, EarlyView.
This work establishes a framework for high‐resolution printed interconnects by coupling e‐jet printing control, multilayer deposition, and sintering optimization. Ink properties and printing speed influence particle stacking, while different sintering atmospheres drive distinct microstructural evolution.
Kaifan Yue, Siddharth Kurup, Rebecca Banner, Calib Lanier, Eric Vogel, Michael Filler, Kira Barton   +6 more
wiley   +1 more source

Flexible Chemiresistive Chitosan‐Glycerol Sensors on Laser‐Induced Graphene Electrodes for Room‐Temperature Ammonia Detection

Advanced Materials Technologies, EarlyView.
Flexible Chitosan‐glycerol sensor integrated with porous laser‐induced graphene (LIG) electrodes enable room‐temperature chemiresistive detection of ammonia (NH3) and proof‐of‐concept detection of fish spoilage. ABSTRACT We report a metal‐free sensor platform combining laser induced graphene (LIG) electrodes with drop‐deposited, glycerol‐plasticized ...
Mintesinot Tamiru Mengistu, Richard Murray, Cara‐Lena Nies, Cathal Larrigy, Martina Piletti, Jahidul Islam, Daniela Iacopino, Eileen Hurley, Michael Nolan, Aidan J. Quinn   +9 more
wiley   +1 more source

Analytical and Physical Investigation on Source Resistance in In_xGa_1-xAs Quantum-Well High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Yoo JH, Lee IG, Tsutsumi T, Sugiyama H, Matsuzaki H, Lee JH, Kim DH.   +6 more
europepmc   +1 more source

Chemically Doped Conductive Polymers for Wearable Health Monitoring

Advanced Materials Technologies, EarlyView.
Among conductive polymers, poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), polyaniline (PANI), and polypyrrole (PPy) are the most studied and applied. Chemical doping significantly boosts intrinsic conductivity and mechanical robustness.
Mengdi Zuo, Jian Song, Hong Hu, Le Zheng, Lei Zhang, Charles H. Lawrie   +5 more
wiley   +1 more source