Results 151 to 160 of about 61,033 (284)

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

Advanced Optical Materials, EarlyView.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yiran Li, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui‐Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma   +22 more
wiley   +1 more source

Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array. [PDF]

Materials (Basel), 2021
Lee HY, Ju YH, Chyi JI, Lee CT.
europepmc   +1 more source

Low-Noise InP High Electron Mobility Transistors

, 2019
Indium phosphide high electron mobility transistors (InP HEMTs) represent the state-of-the-art technology for both room and cryogenic temperature low noise amplifiers. For years they have been playing a central role in the most demanding niche applications such as radio astronomy and deep space communications, and they are expected to significantly
openaire   +2 more sources

Multilevel Optical Programming of Intrinsic Vacancies in Solution‐Processed MoS2 Films for Retinomorphic Color Differentiation

Advanced Optical Materials, EarlyView.
Solution‐processed MoS2 films with intrinsic sulfur‐vacancy traps are used to integrate light sensing and memory in a simple two‐terminal pixel. Successive optical pulses program persistent, multilevel conductance states, while oxygen exposure enables rapid erasure.
Jihyun Kim, Jiyong Yoon, Gwang Ya Kim, Kijeong Nam, Jaewon Heo, In Soo Kim, Dongjoon Rhee, Donghee Son, Joohoon Kang   +8 more
wiley   +1 more source

Printable Conductive Hydrogels for Electrochemical Biosensing and Soft Bioelectronic Interfaces

Advanced Science, EarlyView.
Flexible, conductive hydrogels that integrate printability, mechanical tunability, biocompatibility, and electronic performance remain challenging to achieve. Here, we develop 3D‐printable poly(ethylene glycol)–poly(pyrrole)‐ hydrogels with tissue‐like mechanics, high cytocompatibility, and robust electrochemical function.
Lukas Hein, Renan Colucci, Xin Wei, Tsvetomir Ivanov, Katharina Landfester, Ulrike Kraft, Maria Villiou   +6 more
wiley   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Modulating Persistent Photoconductivity through Barrier Engineering for High‐performance and Multifunctional Two‐dimensional Optoelectronic Devices

Advanced Science, EarlyView.
Schottky barrier engineering using van der Waals contacts enables effective modulation of persistent photoconductivity (PPC) in optoelectronic devices. A high persistent photoconductivity gain (PPCG) (307.6%) is achieved in a high‐barrier Au/MoS2 junction, supporting photomemory and optoelectronic synaptic behaviors. A low PPCG (4.72%) is achieved in a
Panpan Huo, Xinhao Zhang, Xiangyong Cui, Yeming Wang, Dong Zhou, Baoyuan Man, Il Jeon, Won Jong Yoo, Cheng Yang   +8 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array. [PDF]

Materials (Basel), 2021
Lee HY, Liu DS, Chyi JI, Chang EY, Lee CT.   +4 more
europepmc   +1 more source

Surface‐Interaction‐Driven Polarity Switching in II–V Cd3P2 Colloidal Quantum Dots for Infrared Photodiodes

Advanced Science, EarlyView.
. ABSTRACT Colloidal quantum dots (CQDs) based on II–V semiconductors offer attractive optical absorption and carrier transport properties for infrared optoelectronics, yet their device‐relevant electronic behavior remains poorly understood. In particular, Cd3P2 CQDs have been constrained by limited control over nanocrystal growth and carrier polarity.
Ha‐Chi V. Tran, Doeun Shim, Youngsang Park, Mahnmin Choi, Hyeonjun Jeong, Guillaume Bonifas, Liyan Ouyang, Celine Nayral, Fabien Delpech, Joongoo Kang, Sohee Jeong   +10 more
wiley   +1 more source