Results 151 to 160 of about 10,169 (255)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Design of a High-Efficiency Micro-Inverter with TO-220 Packaged Gallium Nitride - High-Electron-Mobility Transistors

Electrica
Tevhide Dayioglu, Mehmet Onur Gulbahce, Abdulsamed Lordoglu, Derya Ahmet Kocabas   +3 more
doaj   +1 more source

Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel)
Zhou B, Liu C, Guo C, Hu X, Jian X, Wang H, Yang X.   +6 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure. [PDF]

Micromachines (Basel)
Liu AC, Huang YW, Chen HC, Kuo HC.
europepmc   +1 more source

Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

Advanced Electronic Materials, EarlyView.
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina, Stefan Neatu, Lucian Pintilie, Lucia Nicoleta Leonat, Stavros Kitsios, Stefania Skorda, Alexandros El Sachat, Polychronis Tsipas, Alexander Flasby, Laura Bégon‐Lours, Athanasios Dimoulas   +10 more
wiley   +1 more source

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure. [PDF]

ACS Omega
Lin CF, Huang KP, Wang HW, Chen KT, Wang CJ, Kao YC, Chen H, Lin YS.   +7 more
europepmc   +1 more source

Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics

Advanced Electronic Materials, EarlyView.
Compliant bioelectronic systems enable continuous monitoring of chronic disease through soft, stretchable materials and tissue‐conformal designs that support stable electrophysiological, mechanical, and biochemical sensing. Integration of diverse sensing modalities with thoughtful material selection, device architectures, and advanced fabrication ...
Han Kim, Mabel Bartlett, Liyang Wang, Karl Bates, Mengdi He, Myungbo Kim, Carmel Majidi, Tzahi Cohen‐Karni   +7 more
wiley   +1 more source

Illuminating the Intracellular World: Breakthroughs in Nanoscale Optoelectronics

Advanced Electronic Materials, EarlyView.
This perspective explores optoelectronic biointerfaces spanning macroscale flexible devices to nanoscale intracellular systems, emphasizing their integration across dimensions. It examines capacitive, Faradaic, and photothermal mechanisms that enable light‐driven control of cellular activity and highlights key material and design challenges in ...
Tania Assaf, Menahem Y. Rotenberg
wiley   +1 more source

Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulation Study. [PDF]

Micromachines (Basel)
Kim JH, Lim CY, Lee JH, Choi JH, Min BG, Kang DM, Kim HS.   +6 more
europepmc   +1 more source