Results 171 to 180 of about 61,033 (284)

CMOS‐Integrated Synaptic Photoreceptor Chip Inspired by Insect Visual Processing

Advanced Science, EarlyView.
CMOS‐integrated Si QDs/ReS2 synaptic photoreceptor array mimics the parallel processing and wavelength‐selective strategy of insect vision. By combining intrinsic ultraviolet‐violet sensitivity with synaptic plasticity, the chip enables frontend sensory redundancy reduction without external filters, offering a scalable pathway toward lowpower ...
Jian Chai, Xinyi Xu, Yue Wang, Xiaochen Wang, Hailiang Wang, Yunfei Xie, Xinwei Zhang, Haoyu Wang, Hao Ning, Jiangming Lin, Yongliang Xie, Qihai Jiang, Baoshi Qiao, Xiaolei Ding, Luyao Ma, Shukai Duan, Zhenyi Ni, Huan Hu, Xin He, Fei Xue, Feichi Zhou, Lingfei Li, Srikrishna Chanakya Bodepudi, Rui Yuan, Bin Yu, Yang Xu   +25 more
wiley   +1 more source

Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors. [PDF]

Micromachines (Basel)
Grandpierron F, Carneiro E, Ben-Hammou L, Moon JS, Medjdoub F.   +4 more
europepmc   +1 more source

Thermoelectric Gating Organic Electrochemical Transistors Enabled by Printable Ionogels With n‐p Convertible Thermopower

Advanced Science, EarlyView.
A type of thermoelectric ionogels with convertible n‐p thermopowers are demonstrated with Seebeck coefficients ranging from ‐3.61 to +9.74 mV K−1. Thus, thermoelectric gating organic electrochemical transistor is achieved by employing ionogel as thermoelectric modules and ionic dielectrics simultaneously, paving the road to self‐powered, highly ...
Xingyu Hu, Xinwen Yan, Ling Huang, Xiaohang Zhang, Xuan Cao, Cong Zhang, Qingqing Sun, Hanyu Jia, Xuying Liu   +8 more
wiley   +1 more source

Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure. [PDF]

Micromachines (Basel)
Hao L, Liu Z, Du H, Zhao S, Wang H, Zhang J, Hao Y.   +6 more
europepmc   +1 more source

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors. [PDF]

Nanomaterials (Basel), 2020
Kang SC, Jung HW, Chang SJ, Kim SM, Lee SK, Lee BH, Kim H, Noh YS, Lee SH, Kim SI, Ahn HK, Lim JW.   +11 more
europepmc   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

GaN High Electron Mobility Transistors: A Review from Parasitic Elements Extraction Perspective

The Journal of Engineering, 2016
Anwar Jarndal, Ammar Kouki
doaj   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress. [PDF]

Nanomaterials (Basel)
Liang Y, Duan J, Zhang P, Low KL, Zhang J, Liu W.   +5 more
europepmc   +1 more source

Optimizing Metal‐Perovskite Interfaces: Electronic and Transport Properties of Au‐Bromide Perovskites Contacts

Advanced Electronic Materials, EarlyView.
This study examines metal–perovskite interfaces in 2D (BA)2PbBr4 and (PEA)2PbBr4 using first‐principles and NEGF methods. It compares top‐ and edge‐contact configurations, revealing Schottky barriers in top contacts and ohmic behavior in edge contacts.
Xinbiao Wang, Qi Zhang, Jing Li, Ji‐Sang Park, Yiming Yang, Letian Dou, Euyheon Hwang   +6 more
wiley   +1 more source