Results 171 to 180 of about 16,548,618 (294)

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

GaN High Electron Mobility Transistors: A Review from Parasitic Elements Extraction Perspective

The Journal of Engineering, 2016
Anwar Jarndal, Ammar Kouki
doaj   +1 more source

Ferroelectric Catalysts in the Hydrogen Evolution Reaction: A Perspective

Advanced Science, EarlyView.
This perspective summarizes recent advances in ferroelectric (FE) catalysts for the hydrogen evolution reaction (HER). It first introduces HER fundamentals and FE mechanisms, then classifies FE catalysts into single‐phase, single‐atom‐modified, heterostructured, and other engineered types, with representative examples.
Rongxuan Lu, Weizhen Meng, Zhenxiang Cheng, Judy N. Hart, Michael Ferry, Sean Li, Wenxian Li   +6 more
wiley   +1 more source

High-Precision Small-Signal Model for Double-Channel-High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect. [PDF]

Micromachines (Basel)
Zhao Z, Yu Q, Lu Y, Yi C, Liu X, Feng T, Zhao W, Chen Y, Yang L, Ma X, Hao Y.   +10 more
europepmc   +1 more source

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. [PDF]

Sci Rep, 2020
Besendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T.   +5 more
europepmc   +1 more source

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

Advanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park, Seung Ho Ryu, Min Su Kim, Taek‐Mo Chung, Seong Keun Kim, In‐Hwan Baek, Keun Hyung Lee   +6 more
wiley   +1 more source

Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors. [PDF]

Micromachines (Basel)
Grandpierron F, Carneiro E, Ben-Hammou L, Moon JS, Medjdoub F.   +4 more
europepmc   +1 more source

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors. [PDF]

Nanomaterials (Basel), 2020
Kang SC, Jung HW, Chang SJ, Kim SM, Lee SK, Lee BH, Kim H, Noh YS, Lee SH, Kim SI, Ahn HK, Lim JW.   +11 more
europepmc   +1 more source

Engineering Dirac Cones in Graphene for Efficient Iodide Catalysis: Insights by Nanoscale Electrochemistry

Advanced Science, EarlyView.
Graphene iodide oxidation is regulated by Dirac cone engineering. Electrostatic gating tunes the Fermi level to control local iodide oxidation reaction activity, while magic‐angle twisted bilayer graphene creates flat‐band‐derived interfacial states that promote charge transfer and iodine‐species interaction, revealing a nanoscale route to electronic ...
Yang‐Sheng Lu, Kuo‐En Chang, Ta‐Lei Chou, Aitor Garcia‐Ruiz, Ting‐Han Lin, Yen‐Ting Liu, Akichika Kumatani, Ming‐Hao Liu, Kenji Watanabe, Takashi Taniguchi, Ming‐Wen Chu, Tse‐Ming Chen, Chun‐Wei Chen, Shao‐Sian Li   +13 more
wiley   +1 more source

Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure. [PDF]

Micromachines (Basel)
Hao L, Liu Z, Du H, Zhao S, Wang H, Zhang J, Hao Y.   +6 more
europepmc   +1 more source