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ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
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Numerical Investigation of Short-Channel Effects and RF Performance in Top-Gate In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors. [PDF]
Micromachines (Basel)Xu H, Zhu M, Fang Z, Zhang L.
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Hydrogel-Based Semiconductors: Principles, Types, and Emerging Applications. [PDF]
GelsBhuyan MM, Lee K, Jeong JH.
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Unlocking the performance limits of 2T0C DRAM with Ω-shaped-gated single-crystal In<sub>2</sub>O<sub>3</sub> FETs. [PDF]
Sci AdvZuo S +16 more
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Organic High Electron Mobility Transistors Realized by 2D Electron Gas
Advanced Materials, 2017A key breakthrough in inorganic modern electronics is the energy‐band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over ...
Haibo Wang, Donghang Yan
exaly +3 more sources
GaN electronics with high electron mobility transistors
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004The III-nitrides AlN, GaN, and InN alloys are expected to be basis of a strong development of a novel family of semiconductor devices, for optoelectronics as well as for electronics, GaN-based high electron mobility transistors (HEMTs) have shown superior power handling and operating temperatures at frequency ranges that are beyond the limits of ...
I. Adesida +5 more
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High electron mobility transistor as electronic flute
Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics, 2002We discuss the similarity between the plasma waves in two dimensional systems and sound waves. We show that the behavior of both types of waves is governed by the same equations. Therefore, we may create resonant structures for plasma waves, similar to those in musical instruments, and plasma waves can be excited by a DC current, just like wind musical
M.I. Dyakonov, M.S. Shur
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High Electron Mobility Transistor Logic
Japanese Journal of Applied Physics, 1981A high electron mobility transistor (HEMT) logic is described. Ring oscillators with enhancement-mode switching and depletion-mode load HEMTs with a 1.7 µm-gate length have been fabricated to assess logic performance capability. Switching delays down to 56.5 ps at room temperature and down to 17.1 ps at liquid nitrogen temperature have been obtained.
Takashi Mimura +4 more
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High Electron Mobility Transistors
2004High Electron Mobility Transistors(HEMTs) [340] are an advanced modification of the simple bulk FET, such as the MEtal Semiconductors Field Effect Transistor (MESFET). Typically, a semiconductor material (barrier) with a comparably wider bandgap is grown on top of a semiconductor material with a higher mobility and comparably lower bandgap.
Vassil Palankovski, Rüdiger Quay
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The growth of high electron mobility InAsSb for application to high electron-mobility transistors
Journal of Crystal Growth, 2009Abstract High electron mobility and low defect density InAsSb lattice matched to AlSb has been successfully grown on InP substrates by the gas-source molecular beam epitaxy using an AlAsSb/AlSb composite buffer layer structure. The common antimony anion of AlAsSb, AlSb, and InAsSb is believed to effectively improve the film quality of InAsSb and AlSb
Chichih Liao, K.Y. Cheng
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