Results 191 to 200 of about 16,548,618 (294)

Design of a High-Efficiency Micro-Inverter with TO-220 Packaged Gallium Nitride - High-Electron-Mobility Transistors

Electrica
Tevhide Dayioglu, Mehmet Onur Gulbahce, Abdulsamed Lordoglu, Derya Ahmet Kocabas   +3 more
doaj   +1 more source

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure. [PDF]

Micromachines (Basel)
Liu AC, Huang YW, Chen HC, Kuo HC.
europepmc   +1 more source

Damage‐Free Passivation of Ambipolar OECTs with Fluoropolymer Film for Enhanced Performance and Stability Toward Reliable Biosignal Processing

Advanced Science, EarlyView.
A damage‐free iCVD fluoropolymer passivation strategy is introduced for ambipolar vertical OECTs. Vapor‐phase infiltration and thermal annealing induce nanoscale phase separation in the OMIEC channel, enhancing overall device performance. A single‐channel bipolar event‐driven spiking encoder is also demonstrated for electrocardiogram signal encoding ...
Junyeong Yang, Bohyun Lee, Hanna Lee, Mingyu Kim, Changsoon Choi, Jung Ah Lim, Youson Kim, Sung Gap Im   +7 more
wiley   +1 more source

Light‐Absorbing‐Layer‐Free Flash Lamp Annealing for High‐Throughput Fabrication of All‐Solution‐Processed Oxide Electronics

Advanced Science, EarlyView.
A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Zetong Li, Wei He, Guangji Wang, Jingwei Zhang, Zhimin Chai, Xinchun Lu   +5 more
wiley   +1 more source

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure. [PDF]

ACS Omega
Lin CF, Huang KP, Wang HW, Chen KT, Wang CJ, Kao YC, Chen H, Lin YS.   +7 more
europepmc   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Formation, Transformation, and Synergistic Interplay of Crystalline Orientation in Conjugated Polymers via Solution‐State Aggregation Control

Advanced Science, EarlyView.
Molecular engineering (i.e., tuning donors) and three film processing strategies (i.e., drop‐casting from different solvents, thermal and solvent vapor annealing, and blending) were synergistically utilized to tailor the solution‐state aggregation and thus the formation, transformation, and interplay of solid‐state crystalline orientation (face‐on and ...
Hao Zheng, Lixin Li, Yanan Guo, Bingjie Wu, Xuebing Luo, Hao Zhan, Yongjie Dong, Ze‐Fan Yao, Juan Peng, Jian Pei   +9 more
wiley   +1 more source

Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulation Study. [PDF]

Micromachines (Basel)
Kim JH, Lim CY, Lee JH, Choi JH, Min BG, Kang DM, Kim HS.   +6 more
europepmc   +1 more source

From Sensing Mechanisms to System Co‐Design: Graphene‐Based Sensors and Readout Circuits

Advanced Science, EarlyView.
This review establishes a unified PS–EQ–RF framework linking graphene sensing mechanisms, native electrical outputs, and output‐specific readout circuits. Voltage‐, current‐, resistance‐, and capacitance‐type sensing systems are systematically classified to guide architecture selection, low‐noise design, system co‐design, and practical integration ...
Jinduo Zhang, Meng Chen, Guanchen Li, Ruifeng Liu, Yingxin Wang, Ziran Zhao   +5 more
wiley   +1 more source

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors. [PDF]

Materials (Basel), 2019
Roccaforte F, Greco G, Fiorenza P, Iucolano F.   +3 more
europepmc   +1 more source