Results 211 to 220 of about 10,169 (255)

Low Noise High Electron Mobility Transistors

Microwave and Millimeter-Wave Monolithic Circuits, 1984
Sub-half-micron gate length High Electron Mobility Transistors (HEMT) were fabricated by direct-write electron beam lithography for low noise EHF amplifiers. Modulation-doped epitaxial structures were grown by molecular beam epitaxy having 8,000 cm/sup 2// V-sec room temperature and 77,600 cm /sup2// V-sec liquid nitrogen Hall mobility for 10/sup12 ...
J.J. Berenz, K. Nakano, K.P. Weller
openaire   +1 more source

A noise model for high electron mobility transistors

IEEE Transactions on Electron Devices, 1994
A model to explain the noise properties for AlGaAs/GaAs HEMT's, AlGaAs/InGaAs/GaAs pseudomorphic HEMT's (P-HEMT's) and GaAs/AlGaAs inverted HEMT's (I-HEMT's) is presented. The model Is based on a self-consistent solution of Schrodinger and Poisson's equations.
A.F.M. Anwar, null Kuo-Wei Liu
openaire   +1 more source

Simulation of high electron mobility transistors

2010
In der vorliegenden Dissertation werden die in HEMTs verwendeten III-V Halbleiter diskutiert. Eigene Monte Carlo-Simulationen werden durch eine umfassende Studie von vorhandenen experimentellen und theoretischen Werken erg¨anzt. Unter Berucksichtigung neuester Forschungsergebnisse uber die Bandstruktur der Materialien und aller wichtigen Streuungs ...
openaire   +1 more source

An analytic model for high-electron-mobility transistors

Solid-State Electronics, 1987
Abstract A new analytic model is developed for the output I–V characteristics and microwave-signal parameters of High Electron Mobility Transistors (HEMTs). In this model, the empirical formula suggested by Giblin et al. is used to approach the behavior of electron drift velocity vs electric field.
Chian S. Chang, Harold R. Fetterman
openaire   +1 more source

Submillimiter measurement of high electron mobility transistors

1987 Twelth International Conference on Infrared and Millimeter Waves, 1987
Cyclotron Resonance measurements are used to determine the effective masses for High Electron Mobility Transistors. The effective mass is a function of gate voltage.
Chian-Sern Chang, Harold R. Fetterman, Arold Green   +2 more
openaire   +1 more source

High electron mobility transistors for LSI circuits

1983 International Electron Devices Meeting, 1983
Current work on HEMT (High Electron Mobility Transistor) LSI technology is presented. Controllability in device parameters of the HEMT is crucially important, and is discussed in the context of LSI capability. Simple device modeling of HEMTs, taking into account the velocity saturation effects, is carried out to provide reasonably accurate predictions ...
T. Mimura, K. Nishiuchi, M. Abe, A. Shibatomi, M. Kobayashi   +4 more
openaire   +1 more source

Negative photoconductivity in high electron mobility transistors

Applied Physics Letters, 1987
High electron mobility transistors are sensitive to light since illumination ionizes deep donor centers and increases the drain current. In this letter the first observation of negative photoconductivity, i.e., drain current decreasing with light, will be reported.
C. S. Chang, H. R. Fetterman, D. Ni, E. Sovero, B. Mathur, W. J. Ho   +5 more
openaire   +1 more source

A microwave model for high electron mobility transistors

Proceedings of the Eleventh Biennial University/Government/ Industry Microelectronics Symposium, 2002
A physically based model is used to predict the S and Y-parameters of the high electron mobility transistor as function of the applied gate bias and the operating frequency. The model is used to estimate the power gain and the maximum stable gain characteristics for HEMTs with different physical and structural parameters which helps in the optimization
H. Ahn, M.A. El Nokali
openaire   +1 more source

A traveling-wave high electron mobility transistor

IEEE Transactions on Microwave Theory and Techniques, 1993
A traveling-wave high electron mobility transistor (THEMT) is proposed. The device is unique in that it includes an integral distributed load resistor and uses a HEMT as the active device. A rigorous analysis of the device is carried out, using a small-signal equivalent circuit model for an incremental section of the device.
M.B. Anand, P.K. Ghosh, P.G. Kornreich, D.J. Nicholson   +3 more
openaire   +1 more source

The noise properties of high electron mobility transistors

IEEE Transactions on Electron Devices, 1986
A simple analytic model for the HEMT, based on the Pucel theory for MESFET's, is developed which can be used to calculate the noise properties of the transistor. Good agreement between calculation and experiment is found. The dependence of noise temperature on gate length and channel thickness is presented.
openaire   +1 more source