Results 211 to 220 of about 16,548,618 (294)

Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †. [PDF]

Sensors (Basel), 2018
Chen PG, Chen KT, Tang M, Wang ZY, Chou YC, Lee MH.   +5 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing

Advanced Electronic Materials, EarlyView.
By integrating experiments and electrostatic field simulations, we show that long‐range wireless coupling in Li‐based ferroionics devices emerges from the cooperative interaction between ionic migration and electronic polarization. This coupling sustains self‐polarized electrostatic fields across centimeter‐scale air gaps without external bias or ...
M. Helena Braga, Beatriz M. Gomes, António B. Vale, Beatriz A. Maia, Ilídio B. Costa, Filipa Braz, Jorge C. Ribeiro, João C. Ribeiro   +7 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

Advanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler, Ciril Reiner‐Rozman, Christoph Kleber, Jakub Dostalek, Wolfgang Knoll   +4 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Ion‐Gating Reservoir Computing for Preprocessing‐Free Speech Recognition from Throat Vibrations

Advanced Electronic Materials, EarlyView.
This work presents a throat‐mounted mechanoelectric sensor integrated with an ion‐gel/graphene reservoir device for on‐device speech recognition. The system converts raw biomechanical vibrations into rich nonlinear current dynamics, enabling efficient classification through a simple linear readout. The approach highlights a compact and tunable physical‐
Daiki Nishioka, Akito Tateyama, Hina Kitano, Takashi Nakanishi, Kazuya Terabe, Takashi Tsuchiya   +5 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Bridging Performance and Fate: A Framework for Sustainable, Composite‐Based Flexible Electronic Systems

Advanced Electronic Materials, EarlyView.
Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley   +1 more source