Results 221 to 230 of about 61,033 (284)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source

Highly Efficient Conductivity Modulation via Stacked Multi-Gate Graphene Ambipolar Transistors. [PDF]

Nanomaterials (Basel)
Nie C, Zhang H, Zhang X, Sun F, Liu J, Wei X.   +5 more
europepmc   +1 more source

Raised or recessed? Finding the optimal gate architecture for improving the static performance of graphene transistors. [PDF]

Nanoscale Adv
Huang TJ, Spencer A, Ingraham L, Pacheco-Sanchez A, Puchades I.   +4 more
europepmc   +1 more source

Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]

Commun Eng
Chung SW, Yoon SH, Jeong JK.
europepmc   +1 more source

Dimensional Scaling Effect in Percolative Oxide Semiconductor Transistors. [PDF]

ACS Nano
Tseng R, Kuo YH, Pan YY, Li ZH, Wang ST, Chen CF, Lo ST, Chan YC, Wu YJ, Chen SC, Kuo CC, Wang CC, Wu CH, Lu WH, Bao X, Thao NTP, Minamitan E, Javey A, Lin CL, Lien DH.   +19 more
europepmc   +1 more source

Nanoscale Thin-Film Flexible Organic Field-Effect Transistors with Triple PMMA/SiO₂/ZnO Gate Insulator Layers. [PDF]

Micromachines (Basel)
Fakher S, Ai-Saymari F, Mabrook M, Al-Attar H.   +3 more
europepmc   +1 more source

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Organic High Electron Mobility Transistors Realized by 2D Electron Gas

Advanced Materials, 2017
A key breakthrough in inorganic modern electronics is the energy‐band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over ...
Panlong Zhang, Haibo Wang, Donghang Yan
openaire   +4 more sources