Results 241 to 250 of about 61,033 (284)

High Electron Mobility InAs Nanowire Field‐Effect Transistors

Small, 2007
AbstractSingle‐crystal InAs nanowires (NWs) are synthesized using metal–organic chemical vapor deposition (MOCVD) and fabricated into NW field‐effect transistors (NWFETs) on a SiO2/n+‐Si substrate with a global n+‐Si back‐gate and sputtered SiOx/Au underlap top‐gate.
Shadi A, Dayeh, David P R, Aplin, Xiaotian, Zhou, Paul K L, Yu, Edward T, Yu, Deli, Wang   +5 more
openaire   +2 more sources

Indirect photoreflectance from high-electron-mobility transistor structures

Physical Review B, 1992
Photoreflectance in sample regions shaded from laser pump illumination reveals a low-level signal attributable to modulation of the two-dimensional electron gas in GaAs/Al x Ga 1−x As high-electron-mobility transistor structures. Samples with 2-9×10 5 -cm 2 /Vs electron mobility (at 4 K) display photoreflectance ΔR/R∼5×10 −6 at distances up to 3 mm ...
, Sydor, , Engholm, , Manasreh, , Evans, , Stutz, , Mitchel   +5 more
openaire   +2 more sources

High-power monolithic AlGaN/GaN high electron mobility transistor switches

International Journal of Microwave and Wireless Technologies, 2009
This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%.
Alleva, V, Bettidi, A, CICCOGNANI, WALTER, De Dominicis, M, Ferrari, M, Lanzieri, C, LIMITI, ERNESTO, Peroni, M.   +7 more
openaire   +2 more sources

Nonlinear model of high electron mobility transistor

13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003., 2003
A new nonlinear HEMT model is presented. The model is based on a well-known small-signal model and includes a nonlinear description of some typically nonlinear components. A parameter extraction algorithm based on processing S-parameter and noise figure data measurements has been developed.
P.A. Yemtsev, I.K. Sunduchkov, B.N. Shelkovnikov, K.S. Sunduchkov   +3 more
openaire   +1 more source

High electron mobility transistors

1991
The High Electron Mobility Transistor (HEMT) has achieved its predicted performance goals, operating at high frequencies (>60 GHz) and high speeds (>10 Gbit/s). As a consequence, it is becoming the transistor of choice for millimetre wave and high speed applications; stimulating the development of new monolithic integrated electronic and optoelectronic
openaire   +1 more source

SiC-based high electron mobility transistor

Applied Physics Letters
This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C–SiC layer was grown on a C-face 4H–SiC substrate, and 2D electron gas was induced at the 3C–SiC/4H–SiC heterointerface due to the unique polarization physics.
Hiroyuki Sazawa, Akira Nakajima, Shigeyuki Kuboya, Hitoshi Umezawa, Tomohisa Kato, Yasunori Tanaka   +5 more
openaire   +1 more source

Development of High Electron Mobility Transistor

Japanese Journal of Applied Physics, 2005
The development of the high electron mobility transistor (HEMT) provides a good illustration of the way a new device emerges and evolves toward commercialization. This article will focus on these events that the author feels might be of interest to young researchers. Recent progress and future trends in HEMT technology are also described.
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Proposed size-effect high-electron-mobility transistor

Solid-State Electronics, 1986
Abstract We present a theoretical analysis of a high-electron-mobility transistor that uses the quantum size-effect to increase the energy gap of a thin InSb film that forms the channel of the device. The analysis is based on a considerable amount of available data.
Phillipp G. Kornreich, Lois Walsh, James Flattery, Saliman Isa   +3 more
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High electron mobility transistor small signal model

2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843), 2004
The small signal model of the ATF-36077 high electron mobility transistor is presented for both packaged and unpackaged cases. The model parameter extraction procedure is presented. It is shown that using the transistor without its package gives the possibility to expand the amplifier frequency range more than twice.
P.A. Yemtsev, I.K. Sunduchkov, K.S. Sunduchkov, B.N. Shelkovnikov   +3 more
openaire   +1 more source

Optoelectronic pseudomorphic high-electron-mobility transistors

SPIE Proceedings, 1997
We present experimental and theoretical results on in-situ photoconduction (PC) and photoemission (PE) studies on fully fabricated pseudomorphic high electron mobility transistors (PHEMTs). The measurements are performed on wafer and are non-destructive.
openaire   +1 more source