Results 251 to 260 of about 61,033 (284)

Scaling properties of high electron mobility transistors

IEEE Transactions on Electron Devices, 1986
We present the scaling properties of an idealized HEMT structure at 300 K. A two-dimensional device model based on three moments of the Boltzmann equation is used to investigate a constant voltage scaling scheme. Detailed results are presented for gate lengths of 2.0, 1.33, 1.0, 0.67, and 0.50 µm.
I.C. Kizilyalli, K. Hess, J.L. Larson, D.J. Widiger   +3 more
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Thermal noise in high electron mobility transistors

Solid-State Electronics, 1983
Abstract Thermal noise in HEMT devices is evaluated for arbitrary drain voltages including saturation. The results closely resemble those for MOSFETS. The consequences of hot electron effects are indicated, and the effects due to feedback via the series resistance Rs on the source side of the channel are evaluated.
A. van der Ziel, E.N. Wu
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GaN-Based High Electron Mobility Transistor

A next-generation of highly efficient power devices is under development, utilizing wide bandgap semiconductors, such as GaN and SiC. These materials are gaining traction as attractive alternatives to silicon due to their superior properties. GaN, in particular, has garnered significant interest due to its excellent characteristics, such as a high ...
Nipun Sharma, Ashish Raman, Ravi Ranjan
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Simulation of high electron mobility transistors

2010
In der vorliegenden Dissertation werden die in HEMTs verwendeten III-V Halbleiter diskutiert. Eigene Monte Carlo-Simulationen werden durch eine umfassende Studie von vorhandenen experimentellen und theoretischen Werken erg¨anzt. Unter Berucksichtigung neuester Forschungsergebnisse uber die Bandstruktur der Materialien und aller wichtigen Streuungs ...
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Submillimiter measurement of high electron mobility transistors

1987 Twelth International Conference on Infrared and Millimeter Waves, 1987
Cyclotron Resonance measurements are used to determine the effective masses for High Electron Mobility Transistors. The effective mass is a function of gate voltage.
Chian-Sern Chang, Harold R. Fetterman, Arold Green   +2 more
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High electron mobility transistors for LSI circuits

1983 International Electron Devices Meeting, 1983
Current work on HEMT (High Electron Mobility Transistor) LSI technology is presented. Controllability in device parameters of the HEMT is crucially important, and is discussed in the context of LSI capability. Simple device modeling of HEMTs, taking into account the velocity saturation effects, is carried out to provide reasonably accurate predictions ...
T. Mimura, K. Nishiuchi, M. Abe, A. Shibatomi, M. Kobayashi   +4 more
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Ballistic transport in high electron mobility transistors

IEEE Transactions on Electron Devices, 2003
A general ballistic FET model that was previously used for ballistic MOSFETs is applied to ballistic high electron mobility transistors (HEMTs), and the results are compared with experimental data for a sub-50 nm InAlAs-InGaAs HEMT. The results show that nanoscale HEMTs can be modeled as an intrinsic ballistic transistor with extrinsic source/drain ...
null Jing Wang, M. Lundstrom
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Terahertz electrodynamics in high electron-mobility transistors

Journal of Applied Physics, 2013
Plasmon current, charge oscillations, and associated electromagnetic fields in the THz range of a two-dimensional electron gas forming the channel of a high electron mobility transistor have been analysed by solving the full set of Euler, continuity, and Maxwell equations.
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Radiation effects in high-electron-mobility transistors

Technical Physics Letters, 1999
The influence of 60Co γ radiation on the current-voltage characteristics of high electron mobility transistors is examined in the dose range from 1×104 to 6×108 R. No changes are observed up to a total dose of 1×107 R, but radiation-induced degradation of the transistors occurs when the dose exceeds 1× 108 R. The possible causes of the effects observed
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Cyano‐Functionalized n‐Type Polymer with High Electron Mobility for High‐Performance Organic Electrochemical Transistors

Advanced Materials, 2022
Kui Feng, Junwei Wang, Jin-Woo Lee
exaly