Results 201 to 210 of about 61,033 (284)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †. [PDF]

Sensors (Basel), 2018
Chen PG, Chen KT, Tang M, Wang ZY, Chou YC, Lee MH.   +5 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition. [PDF]

Nanoscale Res Lett, 2017
Tzou AJ, Chu KH, Lin IF, Østreng E, Fang YS, Wu XP, Wu BW, Shen CH, Shieh JM, Yeh WK, Chang CY, Kuo HC.   +11 more
europepmc   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors. [PDF]

J Vis Exp, 2016
Hardy MT, Storm DF, Katzer DS, Downey BP, Nepal N, Meyer DJ.   +5 more
europepmc   +1 more source

Lateral Profile of Doping Concentration Extracted From the C‐V Characteristics in Self‐Aligned Top‐Gate Coplanar InGaZnO Thin‐Film Transistors

Advanced Electronic Materials, EarlyView.
For self‐aligned top‐gate amorphous InGaZnO thin‐film transistors (TFTs), a capacitance‐voltage‐based extraction technique that directly reconstructs a lateral doping profile and key parameters is proposed. The extracted profiles are validated by direct comparison with the transfer‐length method.
Seung Joo Myoung, Chang Il Ryoo, Jingyu Park, Dong Hyeop Shin, Su Han Noh, Sae Him Jung, Soohong Eo, Wonjung Kim, Sung Jun Yun, Jae Moon Soh, Yoo Seok Park, Changwook Kim, Dong Myong Kim, Sung‐Jin Choi, Yoon Jung Lee, Ickhyun Song, Dae Hwan Kim   +16 more
wiley   +1 more source

Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics

Advanced Electronic Materials, EarlyView.
Disordered p‐type SnO thin‐films are deposited via atomic layer deposition using a novel heteroleptic precursor. These films enable low‐temperature fabrication of thin‐film transistors with excellent stability and mobility. Their potential compatibility with flexible substrates and integration with n‐type IGZO transistors makes them candidates for ...
Benjamin J. Peek, Kham Man Niang, Benjamin McMitchell, Heath Bagshaw, Karl Dawson, Adrian Gardner, Babak Bakhit, James D. Parish, Oliver W. S. Clark, Joe C. Goodall, Andrew Brookes, Satyajit Das, Feras Alkhalil, Andrew L. Johnson, Andrew J. Flewitt, Paul R. Chalker   +15 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics

Advanced Electronic Materials, EarlyView.
Compliant bioelectronic systems enable continuous monitoring of chronic disease through soft, stretchable materials and tissue‐conformal designs that support stable electrophysiological, mechanical, and biochemical sensing. Integration of diverse sensing modalities with thoughtful material selection, device architectures, and advanced fabrication ...
Han Kim, Mabel Bartlett, Liyang Wang, Karl Bates, Mengdi He, Myungbo Kim, Carmel Majidi, Tzahi Cohen‐Karni   +7 more
wiley   +1 more source