Results 201 to 210 of about 16,548,618 (294)

Wafer‐Scale 3D Integration for High‐Density Multi‐Valued Neuromorphic Logic

open access: yesAdvanced Science, EarlyView.
Wafer‐scale 3D vertically integrated multi‐valued logic (MVL) circuits are realized by monolithically integrating a Te/IGZO heterojunction FET with an engineered Te pull‐up FET. Heterointerface‐mediated transport and optimized current matching enable stable ternary operation, while vertical stacking reduces circuit footprint and interconnect complexity,
Chang‐Hyeon Kim   +5 more
wiley   +1 more source

Ion‐Exchange‐Driven Ternary Organic Neuromorphic Devices with High Efficiency and Stability

open access: yesAdvanced Science, EarlyView.
Spontaneous ion exchange in a ternary polymer–ionic liquid blend disrupts the phase‐separated ionic domains of the binary film and creates a more homogeneous polymer–ion environment. This ionically reorganized matrix enables stable and efficient electrochemical doping, leading to ion‐gel‐gated organic electrochemical transistors with enhanced ...
Sungmin Lee   +14 more
wiley   +1 more source

Gate Metal‐Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems

open access: yesAdvanced Science, EarlyView.
Intrinsically stretchable OECTs enable bifunctional operations via gate engineering. Polarizable Ag/AgCl gates provide volatile sensing, while Au gates enable non‐volatile memory. The SEBS‐blended channel maintains performance under strain, supporting reliable signal transduction.
Jiyong Yoon   +8 more
wiley   +1 more source

Deposition Rate‐Controlled Functional Evolution of p‐Type Selenium‐Alloyed Tellurium–Tellurium Oxide Films for Thin‐Film Transistors

open access: yesAdvanced Science, EarlyView.
This study investigates the effects of thermal deposition rate on next‐generation p‐type amorphous oxide semiconductor SeTe–TeOx films. Deposition rate governs the chemical states, microstructure, and electrical characteristics of the films, resulting in tunable device properties.
Seongmo Kang   +8 more
wiley   +1 more source

Asymmetric Fluorinated Spiro Hole‐Transport Materials Enabled by a Rapid Core‐Forming Strategy for Blade‐Coated Perovskite Solar Cells

open access: yesAdvanced Science, EarlyView.
Facile synthesis of asymmetric fluorinated spiro‐type HTMs combined with blade‐coating fabrication and vacuum‐assisted crystallization enables high‐efficiency PSCs with PCEs of 24.49% (0.09 cm2) and 23.28% (1.00 cm2), along with excellent stability.
Kun‐Mu Lee   +13 more
wiley   +1 more source

Organic Electrochemical Transistors for Neuromorphic Bioelectronics: Materials and Manufacturing Technologies

open access: yesAdvanced Science, EarlyView.
Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee   +5 more
wiley   +1 more source

Designer Moiré Quantum Materials Enabled by Freestanding Oxide Membranes in Twisted and Hybrid Bilayers

open access: yesAdvanced Science, EarlyView.
Freestanding oxide membranes transform twistronics by enabling deterministic stacking, strain release, and integration with two‐dimensional materials. A unified framework links local atomic registry to structural reconstruction, polar textures, charge modulation, flat bands, and magnetic responses, while identifying the fabrication and characterization
Puneet Kaur, Rahul, Jan‐Chi Yang
wiley   +1 more source

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang   +9 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

open access: yesAdvanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj   +3 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

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