Results 161 to 170 of about 61,033 (284)

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]

Micromachines (Basel)
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.   +6 more
europepmc   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review. [PDF]

Micromachines (Basel)
Lee CT, Lee HY.
europepmc   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

Influence of LPCVD-Si₃N₄ Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel)
Jiang G, Li W, Luo X, Liu Y, Fu C, Zhang Q, Zhang G, Lin Z, Cui P.   +8 more
europepmc   +1 more source

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2020
Lin YS, Lin SF.
europepmc   +1 more source

Defect‐Functionalization‐Mediated Tunneling Drives Nonlinear Photoemission in Perovskites

Advanced Science, EarlyView.
This cover illustration depicts CsPbBr3 perovskite nanocrystals embedded with functionalized defect vacancies, where electrons migrate through defect‐mediated pathways and emit as lightning‐like beams. The imagery visualizes the core discovery of our work—defect‐functionalization‐mediated tunneling enabling nonlinear photoemission, where deep‐level ...
Hang Ren, Xi Zhang, Yicheng Wang, Shuai Wang, Zhi Wang, Yumeng Li, Jikai Yang, Xin Wang, Weijun Chen, Yining Mu   +9 more
wiley   +1 more source

Multidimensional and Multifunctional Laser‐Induced Graphene (LIG) for Point‐of‐Care and Wearable Biosensing, Theranostics, and Bioactive Interfaces Toward Personalized Healthcare and Regenerative Medicine

Advanced Science, EarlyView.
Multidimensional laser‐induced graphene (LIG) spanning from 0D to 3D architectures is comprehensively reviewed for multifunctional biomedical platforms, including biosensing, theranostics, and bioactive interface applications, which highlights its potentials for point‐of‐care diagnostics, wearable health monitoring, smart drug delivery, and tissue ...
Li Zhang, Yurou Yuan, Xiaohong Ding, Wing Cheung Mak   +3 more
wiley   +1 more source

High-Precision Small-Signal Model for Double-Channel-High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect. [PDF]

Micromachines (Basel)
Zhao Z, Yu Q, Lu Y, Yi C, Liu X, Feng T, Zhao W, Chen Y, Yang L, Ma X, Hao Y.   +10 more
europepmc   +1 more source

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. [PDF]

Sci Rep, 2020
Besendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T.   +5 more
europepmc   +1 more source