Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]
Kim DW +10 more
europepmc +1 more source
A graphene‐based electrical biosensor enables rapid and highly sensitive detection of GHB at 100 fm in both standard solutions and artificial urine, providing reliable point‐of‐need screening for drug‐facilitated sexual assault. The platform demonstrates strong selectivity, fast response, and a wide dynamic range, supporting accurate detection in ...
Jai Eun An +8 more
wiley +1 more source
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung +12 more
wiley +1 more source
Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array. [PDF]
Lee HY +4 more
europepmc +1 more source
Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]
Ham G +6 more
europepmc +1 more source
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee +5 more
wiley +1 more source
Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review. [PDF]
Lee CT, Lee HY.
europepmc +1 more source
Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh +7 more
wiley +1 more source
Influence of LPCVD-Si<sub>3</sub>N<sub>4</sub> Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]
Jiang G +8 more
europepmc +1 more source
Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors. [PDF]
Lin YS, Lin SF.
europepmc +1 more source

