A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors. [PDF]
Sci Rep, 2021 Amir W +10 more
europepmc +1 more source
InAlN/GaN-Based High Electron Mobility Transistors
, 2019 The Nitrides became publicly known for the realization of the blue LED, which was rewarded with the Nobel Prize in 2014. Nitride based High Electron Mobility Transistors (HEMTs) have successfully shown their potential for high-power and high-frequency applications in the recent years. Within the GaN HEMT family, different barrier materials -AlGaN,
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Advanced Materials Technologies, EarlyView.This review presents recent progress in vision‐augmented wearable interfaces that combine artificial vision, soft wearable sensors, and exoskeletal robots. Inspired by biological visual systems, these technologies enable multimodal perception and intelligent human–machine interaction.
Jihun Lee +4 more
wiley +1 more source
AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition
Advanced Materials InterfacesGaN‐based high‐electron‐mobility transistors (HEMTs) are essential for high‐volume data transmission and energy conversion because of their high breakdown voltages and power density.
Teresa Duarte +9 more
doaj +1 more source
Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors. [PDF]
Sci Rep, 2021 Amir W +10 more
europepmc +1 more source
High Electron Mobility Transistors Using AlGaN Materials
, 2019 High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN ...
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Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
Advanced Materials Technologies, EarlyView.This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
wiley +1 more source
Graphene‐Based Wearable Textile Triboelectric Nanogenerators and Biomechanical Sensors
Advanced Materials Technologies, EarlyView.This study presents a wearable textile‐based triboelectric nanogenerator (T‐TENG) using sprayed graphene enhanced with a PVA adhesion layer. The graphene‐based electrode demonstrates high electrical conductivity and robustness to multiple bends. The fabricated T‐TENG provides stable and efficient output, with strong responsiveness to biomotion.
Hongyang Dang +4 more
wiley +1 more source
Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors. [PDF]
Micromachines (Basel), 2022 Chakraborty S, Kim TW.
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Enhancing Small Molecule Sensing With Aptameric Functionalized Nano Devices
Advanced Materials Technologies, EarlyView.Unveiling an ultra‐sensitive, non‐invasive neurotransmitter sensor. For the first time, a nanoscale sensor for detecting an important neurotransmitter was demonstrated using micro‐electromechanical systems (MEMS) technology. Our approach utilized field‐effect transistor (FET)‐based readout to enable pico‐molar detection of biomarkers in sweat.
Thi Thanh Ha Nguyen +11 more
wiley +1 more source