Results 141 to 150 of about 16,548,618 (294)

High‐Performance 2D C‐Axis‐Aligned Crystalline Oxide Semiconductor Heterostructure Transistors via Aqueous Solution Deposition

open access: yesAdvanced Electronic Materials
2D wide bandgap oxide semiconductors with sub‐5 nm thickness have recently attracted tremendous attention owing to their unique electronic characteristics.
Wangying Xu   +5 more
doaj   +1 more source

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

open access: yesAdvanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee   +4 more
wiley   +1 more source

Study of MoN gate impact on GaN high electron mobility transistor

open access: yesElectronics Letters
In this letter, molybdenum nitride (MoN) gate AlGaN/GaN HEMT has been investigated with MoN developed in various physical vapour deposition (PVD) conditions.
Lixing Zhang   +4 more
doaj   +1 more source

Laser‐Induced Local De‐Doping in Organic Semiconductors

open access: yesAdvanced Materials Technologies, EarlyView.
The polymer PBTTT‐C14 doped with the small molecule acceptor F4TCNQ is considered as a benchmark material system. Mask‐free, microscale patterning of the doping level via laser‐induced heating and sublimation of dopant molecules is shown. Controlling laser irradiance and swath spacing allows dopant level control with laser‐limited resolution, opening ...
Christian Rainer   +5 more
wiley   +1 more source

Enhancing Device Performance with High Electron Mobility GeSn Materials

open access: yesAdvanced Electronic Materials
As transistors continue to shrink, the need to replace silicon with materials of higher carrier mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys, stand out for their high electron and hole mobilities, making them ...
Yannik Junk   +10 more
doaj   +1 more source

Analytical and Physical Investigation on Source Resistance in InxGa1-xAs Quantum-Well High-Electron-Mobility Transistors. [PDF]

open access: yesMicromachines (Basel), 2023
Yoo JH   +6 more
europepmc   +1 more source

Recent Advances in Transparent Microelectrode Device Architecture and Fabrication Strategies for Biomedical Applications

open access: yesAdvanced Materials Technologies, EarlyView.
Transparent microelectrode arrays enable simultaneous optical and electrical electrophysiology with high spatiotemporal resolution, allowing multimodal observations of dynamic biological systems. Advances in materials and device architectures improve device performance by addressing key trade‐offs between optical transparency, impedance, and ...
Michael Abraham Listyawan   +6 more
wiley   +1 more source

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors. [PDF]

open access: yesSci Rep, 2021
Amir W   +10 more
europepmc   +1 more source

Flexible Sensors for Robotics Tactile Perception: A Review

open access: yesAdvanced Robotics Research, EarlyView.
Flexible tactile sensing for robotics is reviewed through four interconnected dimensions. Physical mechanisms include piezoresistive, capacitive, piezoelectric, triboelectric, iontronic, and optical sensing. Structural design includes bioinspired, defect‐based, and MEMS‐based tactile systems.
Yu Song, Ying Chen, Yihao Chen, Xue Feng
wiley   +1 more source

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