Results 111 to 120 of about 16,548,618 (294)

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Compressively-strained, buried-channel $Si_{0.7}$Ge$_{0.3}$ p-MOSFETs fabricated on SiGe virtual substrates using a 0.25 µm CMOS process

, 2004
Enhanced performance is demonstrated from a buried, compressively strained-Si0.7Ge0.3 p-MOSFET fabricated on a relaxed Si0.85Ge0.15 using a high thermal budget 0.25 µm CMOS process.
Zhang, Jing, Cerrina, Claudia, Paul, Douglas J., Temple, Matthew P., Li, Xiabbing, Olsen, Sarah H., Tang, Yue T., Evans, Alan G.R., O’Neill, Anthony G., Waite, Andrew M.   +9 more
core   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors

, 2019
Flexible electronic technology has attracted great attention due to its wide range of potential applications in the fields of healthcare, robotics, and artificial intelligence, etc.
Qilin Hua (6503192), Xingyu Zhou (457475), Zhong Lin Wang (1273431), Qilin Hua, Jiyuan Zhu (6525662), Liang Jing (84326), Jiyuan Zhu, Weiguo Hu (176263), Xingyu Zhou, Weiguo Hu, Zhong Lin Wang, Liang Jing   +11 more
core   +1 more source

Diketopyrrolopyrrole‐Based Cation as a Semiconducting Spacer in Layered Perovskite

Advanced Materials, EarlyView.
Diketopyrrolopyrrole cation incorporated layered perovskites exhibiting extended absorption profiles and enhanced charge carrier mobility with type‐II energy alignment. The improved photoconversion efficiency demonstrates the critical role of incorporating organic semiconductors in optimizing layered perovskite performance.
Waygen Thor, Colin Jeanguenat, Louise De Cian, Demetra Tsokkou, Parnian Ferdowsi, Nicolas J. Diercks, Natalie Banerji, Jun‐Ho Yum, Kevin Sivula   +8 more
wiley   +1 more source

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

, 2015
In this letter, silicon nitride (SiNx) film deposited at 780 degrees C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors.
Fu, K(付凯), Yang, Shu, Cai, Yong, Liu, Shenghou, Fu, Kai, Hua, MY, Liu, SH, Hua, Mengyuan, Zhang, Baoshun, Yang, S, Cai, Y(蔡勇), Chen, KJ, Zhang, BS(张宝顺), Chen, Kevin J., Liu, C, Liu, Cheng, Dong, Zhihua, Dong, ZH(董志华)   +17 more
core   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator [PDF]

, 2009
—Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has ...
Chou, Dei-Wei, Li, Yu-Chang, Wei, Chia-Yu, Wang, Yeong-Her, Adriyanto, Feri, Lin, Yu-Ju, Huang, Tong-Jyun   +6 more
core  

MXenes Contacts for p-type 2D Electronics. [PDF]

Adv Sci (Weinh)
Solution‐processed MXene contacts are engineered for p‐type 2H‐MoTe2 transistors. By comparing Ti3C2Tx, Nb2CTx, and Mo2CTx, Nb2CTx is identified as the best‐performing contact among the MXenes examined in this work, offering favorable work‐function alignment, low contact resistance, and near‐ohmic hole injection for scalable 2D electronics.
Guo T, Chen M, Wang Y, Liu C, Xu X, Luo L, Zhu D, Chu N, Zhang X, Caraveo A, Anthopoulos TD, Zhang X, Alshareef HN.   +12 more
europepmc   +2 more sources

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

Advanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park, Jin Hong Kim, Hyun Wook Kim, Néstor Ghenzi, Sung Keun Shim, Joon‐Kyu Han, Min Jung Chung, Dong Hoon Shin, Kyung Seok Woo, Cheol Seong Hwang   +9 more
wiley   +1 more source