Results 91 to 100 of about 16,548,618 (294)

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source

Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing

The surface electronic states and defects of gallium nitride based high-electron-mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added ...
Cui, P, Xu, M, Wang, L, Han, J, Chen, S, Luo, X, Dai, J, Xu, X, Linewih, H, Cheong, KY, Sun, J   +10 more
core   +1 more source

Design of new logic architectures utilizing optimized suspended-gate single-electron transistors

, 2010
The operation and performances of the suspended-gate single-electron transistor (SET) are investigated through simulation. The movable gate is 3-D optimized, so that low actuation voltage (0.4 V), fast switching (1 ns), and ultralow pull-in energy (0.015
Mizuta, Hiroshi, Uchida, K., Oda, S., Pruvost, B.   +3 more
core   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates

Applied Physics Express
High voltage (∼2 kV) Al _0.64 Ga _0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm ^2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage.
Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta   +7 more
doaj   +1 more source

Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistors

Nano Materials Science
Gallium Nitride (GaN) high electron mobility transistors (HEMTs) have garnered significant attention in micro/millimeter wave and terahertz technologies due to their unique material properties, including a large bandgap, a strong electron mobility, a ...
Shili Xiang, Qichao Ding, Jun Liu, Hao Hu, Bo Zhao, Shuangzan Lu, Fan Huang, Joao Cunha, José Rodrigues, Zhipeng Yu, Hong Yin   +10 more
doaj   +1 more source

Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells

Advanced Materials, EarlyView.
Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang, Christopher Wöpke, Toni Seiler, Jared Faisst, Mathias List, Meike Kuhn, Bekcy Joseph, Alexander Ehm, Dietrich R. T. Zahn, Yana Vaynzof, Eva M. Herzig, Roderick C. I. Mackenzie, Uli Würfel, Maria Saladina, Carsten Deibel   +14 more
wiley   +1 more source

Comparative Study of T-Gate Structures in Nano-Channel GaN-on-SiC High Electron Mobility Transistors

Engineering Proceedings
We investigated the radio frequency (RF) performance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on silicon carbide substrates, featuring two distinct T-shaped gate structures. A comparative analysis between a silicon nitride (SiNx)
Yu-Chen Liu, Dian-Ying Wu, Hung-Cheng Hsu, I-Hsuan Wang, Meng-Chyi Wu   +4 more
doaj   +1 more source

Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

AIP Advances, 2016
Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs).
W. A. Sasangka, G. J. Syaranamual, R. I. Made, C. V. Thompson, C. L. Gan   +4 more
doaj   +1 more source

GaN high electron mobility transistors with AlInN back barriers

, 2016
GaN based high electron mobility transistor (HEMT) structures with AlInN back barriers are designed and investigated by Self-consistent Schrodinger-Poisson numerical simulation.
He, XG, X.G. He, D.G. Zhao, P. Chen, Z.S. Liu, J. Yang, Liu, JP(刘建平), X.J. Li, Jiang, DS, J.P. Liu, D.S. Jiang, Liu, ZS, Zhang, LQ(张立群), Li, XJ, Le, LC, Yang, H(杨辉), L.C. Le, Zhu, JJ, Chen, P, H. Yang, J.J. Zhu, Zhao, DG, Yang, J, L.Q. Zhang   +23 more
core   +1 more source