Results 91 to 100 of about 61,033 (284)

Self‐Healing and Stretchable Synaptic Transistor

Advanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo, Sangyong Park, Yoonyi Jeong, Jaepyo Jang, Duhwan Seong, In Soo Kim, Myung‐Gil Kim, Mikyung Shin, Minah Suh, Donghee Son, Jin‐Hong Park   +10 more
wiley   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

ScAlN/GaN-on-Si (111) HEMTs for RF applications

Applied Physics Express
ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher two-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN.
Seif El Whibi, Nagesh Bhat, Yassine Fouzi, Nicolas De France, Jean-Claude De Jaeger, Zahia Bougrioua, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq   +9 more
doaj   +1 more source

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source

Smart Face Masks as Wearable Respiratory Sensors: A Review of Sensor Technologies, Materials, and Future Directions

Advanced Healthcare Materials, EarlyView.
This review highlights recent advances in smart face masks that actively monitor breathing. By integrating humidity, gas, temperature, pressure, strain, and triboelectric sensors, these masks track key respiratory parameters in real time. The article summarizes sensor mechanisms, compares performance across studies, and discusses challenges and future ...
Negin Faramarzi, Naseeh Backer Kannanthodi, Alice Nicole Casling, Babar Ali, Samira Lakouraj Mansouri, Alessandro Giuseppe D'aloia, Hossein Cheraghi Bidsorkhi, Maria Sabrina Sarto   +7 more
wiley   +1 more source

Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistors

Nano Materials Science
Gallium Nitride (GaN) high electron mobility transistors (HEMTs) have garnered significant attention in micro/millimeter wave and terahertz technologies due to their unique material properties, including a large bandgap, a strong electron mobility, a ...
Shili Xiang, Qichao Ding, Jun Liu, Hao Hu, Bo Zhao, Shuangzan Lu, Fan Huang, Joao Cunha, José Rodrigues, Zhipeng Yu, Hong Yin   +10 more
doaj   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Transient Charging of Mixed Ionic‐Electronic Conductors by Anomalous Diffusion

Advanced Materials, EarlyView.
This article explores charge transport in mixed ionic‐electronic conductors (MIECs) through electrochemical impedance spectroscopy and transient current analysis. Focusing on PEDOT:PSS, WO3, and n‐doped PBDF, it uncovers the impact of anomalous diffusion via fractional modeling. The study reveals key correlations that deepen understanding and guide the
Heyi Zhang, Gonzalo Rivera‐Sierra, Shirin Siahjani‐Gultekin, Jenifer Rubio‐Magnieto, Anis Allagui, Ignacio Sanjuán, David Franco, Antonio Guerrero, Enrique H. Balaguera, Juan Bisquert   +9 more
wiley   +1 more source

Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

AIP Advances, 2016
Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs).
W. A. Sasangka, G. J. Syaranamual, R. I. Made, C. V. Thompson, C. L. Gan   +4 more
doaj   +1 more source

Graded-Gap Technology Formatting of High-Speed GaAs – Transistor Structures as the Basis for Modern of Large Integrated Circuits

Фізика і хімія твердого тіла, 2016
Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large integrated circuits structures on Si-
S. P. Novosyadlyy, A. M. Bosats'kyy
doaj   +1 more source