Results 91 to 100 of about 10,169 (255)

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Wang Z, Nan J, Tian Z, Liu P, Wu Y, Zhang J.   +5 more
europepmc   +1 more source

Defect‐Functionalization‐Mediated Tunneling Drives Nonlinear Photoemission in Perovskites

Advanced Science, EarlyView.
This cover illustration depicts CsPbBr3 perovskite nanocrystals embedded with functionalized defect vacancies, where electrons migrate through defect‐mediated pathways and emit as lightning‐like beams. The imagery visualizes the core discovery of our work—defect‐functionalization‐mediated tunneling enabling nonlinear photoemission, where deep‐level ...
Hang Ren, Xi Zhang, Yicheng Wang, Shuai Wang, Zhi Wang, Yumeng Li, Jikai Yang, Xin Wang, Weijun Chen, Yining Mu   +9 more
wiley   +1 more source

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO₂ as Passivation and Dielectric Layers. [PDF]

Micromachines (Basel), 2023
Lin YS, Lu CC.
europepmc   +1 more source

Multidimensional and Multifunctional Laser‐Induced Graphene (LIG) for Point‐of‐Care and Wearable Biosensing, Theranostics, and Bioactive Interfaces Toward Personalized Healthcare and Regenerative Medicine

Advanced Science, EarlyView.
Multidimensional laser‐induced graphene (LIG) spanning from 0D to 3D architectures is comprehensively reviewed for multifunctional biomedical platforms, including biosensing, theranostics, and bioactive interface applications, which highlights its potentials for point‐of‐care diagnostics, wearable health monitoring, smart drug delivery, and tissue ...
Li Zhang, Yurou Yuan, Xiaohong Ding, Wing Cheung Mak   +3 more
wiley   +1 more source

Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study. [PDF]

Micromachines (Basel), 2023
Choi JH, Kang WS, Kim D, Kim JH, Lee JH, Kim KY, Min BG, Kang DM, Kim HS.   +8 more
europepmc   +1 more source

CMOS‐Integrated Synaptic Photoreceptor Chip Inspired by Insect Visual Processing

Advanced Science, EarlyView.
CMOS‐integrated Si QDs/ReS2 synaptic photoreceptor array mimics the parallel processing and wavelength‐selective strategy of insect vision. By combining intrinsic ultraviolet‐violet sensitivity with synaptic plasticity, the chip enables frontend sensory redundancy reduction without external filters, offering a scalable pathway toward lowpower ...
Jian Chai, Xinyi Xu, Yue Wang, Xiaochen Wang, Hailiang Wang, Yunfei Xie, Xinwei Zhang, Haoyu Wang, Hao Ning, Jiangming Lin, Yongliang Xie, Qihai Jiang, Baoshi Qiao, Xiaolei Ding, Luyao Ma, Shukai Duan, Zhenyi Ni, Huan Hu, Xin He, Fei Xue, Feichi Zhou, Lingfei Li, Srikrishna Chanakya Bodepudi, Rui Yuan, Bin Yu, Yang Xu   +25 more
wiley   +1 more source

Structural and electrical properties of AlGaN/GaN heterostructures grown on 2°-off-axis 4H–SiC epilayers

APL Materials
This paper reports on the structural and electrical properties of AlGaN/GaN heterostructures grown onto 2°-off-axis silicon carbide (4H–SiC) epitaxial layers. The quality of the grown heterostructures was assessed by a combination of different analytical
F. Roccaforte, G. Greco, C. Bongiorno, S. Di Franco, P. Fiorenza, F. Giannazzo, M. Mauceri, A. Severino, F. Iucolano, P. Prystawko, M. Krysko, M. Leszczynski   +11 more
doaj   +1 more source

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study. [PDF]

Micromachines (Basel), 2023
Kang WS, Choi JH, Kim D, Kim JH, Lee JH, Min BG, Kang DM, Choi JH, Kim HS.   +8 more
europepmc   +1 more source

Thermoelectric Gating Organic Electrochemical Transistors Enabled by Printable Ionogels With n‐p Convertible Thermopower

Advanced Science, EarlyView.
A type of thermoelectric ionogels with convertible n‐p thermopowers are demonstrated with Seebeck coefficients ranging from ‐3.61 to +9.74 mV K−1. Thus, thermoelectric gating organic electrochemical transistor is achieved by employing ionogel as thermoelectric modules and ionic dielectrics simultaneously, paving the road to self‐powered, highly ...
Xingyu Hu, Xinwen Yan, Ling Huang, Xiaohang Zhang, Xuan Cao, Cong Zhang, Qingqing Sun, Hanyu Jia, Xuying Liu   +8 more
wiley   +1 more source