Results 61 to 70 of about 61,033 (284)

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Energies, 2023
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior.
Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley   +5 more
doaj   +1 more source

An air-stable DPP-thieno-TTF copolymer for single-material solar cell devices and field effect transistors [PDF]

, 2015
Following an approach developed in our group to incorporate tetrathiafulvalene (TTF) units into conjugated polymeric systems, we have studied a low band gap polymer incorporating TTF as a donor component.
Alexander L. Kanibolotsky, Anto R. Inigo, Beaujuge P. M., Berridge R., Brédas J. L., Chabinyc M. L., Chen F. C., Chen T. A., Diego Cortizo-Lacalle, Elsenbaumer R. L., Facchetti A., Gu G., Gu G., Gunbas G., Kim S. H., Kim S. H., Kroon R., Lacalle D. C., Lindner S. M., Ma W., McCullough R. D., Miyanishi S., Murphy A. R., Paul A. Lane, Peter J. Skabara, Roman L. S., Roncali J., Ryu K., Sasikumar Arumugam, Sessolo M., Simon Hunter, Skabara P. J., Sommer M., Stephan Rossbauer, Thomas D. Anthopoulos, Walker B., Wang J., Yook K. S., Yuan J., Yuen J. D., Zaumseil J., Zhang Q.   +41 more
core   +2 more sources

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

Advanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee, Sumin Hong, Minho Park, Seongju Kim, Sanghoon Baek, Seonguk Yang, Chang‐Soo Lee, Sang‐Hoon Bae, Joonki Suh, Yongwoo Lee, Haksoon Jung, Jimin Kwon   +11 more
wiley   +1 more source

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance [PDF]

, 2007
Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC characteristics of ...
A. Bournel, Appenzeller, Cazin d’Honincthun, Datta, Dollfus, Dubay, Durkop, Guo, H. Cazin d’Honincthun, H.-Nha Nguyen, Hertel, J.P. Bourgoin, Javey, Javey, Javey, John, Kim, Lin, Lugli, Luryi, Machon, P. Dollfus, Pennington, Radosavljevic, S. Galdin-Retailleau, Saito, Verma   +26 more
core   +2 more sources

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

Advanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Advanced Electronic Materials
Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required.
Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis   +13 more
doaj   +1 more source

Inelastic Phonon Scattering in Graphene FETs

, 2011
Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky).
Chauhan, Jyotsna, Guo, Jing
core   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

Advanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon, Jaeyeon Kim, Dong Yeon Won, Saeyoun Park, Youngjae Yoo, Seongchan Kim, Dong‐Hwan Kim, Jeong Ho Cho   +7 more
wiley   +1 more source

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

, 2018
We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor (CMOS ...
Kataria, Satender, Lemme, Max C., Nagel, Michael, Negra, Renato, Neumaier, Daniel, Noculak, Achim, Otto, Martin, Pandey, Himadri, Sawallich, Simon, Shaygan, Mehrdad, Wang, Zhenxing   +10 more
core   +1 more source

Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors [PDF]

, 2014
The evolution of AlGaN/GaN high electron-mobility transistors under off-state stress conditions is studied by gate leakage current (Ig) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature.
Kuball, Martin H H, Montes Bajo, Miguel, Sun, Huarui, Uren, Michael J   +3 more
core   +2 more sources