Results 61 to 70 of about 16,548,618 (294)

Ground‐State Charge‐Transfer Doping in Donor–Acceptor Semiconducting Polymers

Advanced Functional Materials, EarlyView.
This work demonstrates controlled ground‐state charge‐transfer complex formation (GS‐CTC) and doping in a series of diketopyrrolopyrrole‐based donor–acceptor semiconducting polymers paired with a π‐conjugated penta‐t‐butylpentacyanopentabenzo[25]annulene “cyanostar” macrocycle. Complementary experimental techniques show how subtle molecular, electronic,
Tanner L. Smith, Akshay N. Shah, Tanya A. Balandin, Michel De Keersmaecker, Paramasivam Mahalingam, Debapriya Gupta, Siqi Yu, Eui Hyun Suh, Pushkar Dalal, Erin L. Ratcliff, Scott P. O. Danielsen, Tse Nga Ng, Amar H. Flood, Jason D. Azoulay   +13 more
wiley   +1 more source

Kelvin force microscopy of polymer and small molecule thin-film transistors

, 2011
By their nature, scanning probe microscopy (SPM) measurements are ideally suited to the study of organic thin-film transistors (TFTs). In Chapter 3 surface potential measurements are made on TFTs made from the polymer pBTTT.
Bain, Stephen
core   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks [PDF]

, 2004
Using ensemble Monte Carlo device simulations, this paper studies the impact of interface roughness and soft-optical phonon scattering on the performance of sub-100nm Si and strained Si MOSFETs with different high-k gate stacks. Devices with gate lengths
Watling, J. R., Adam-Lema, F., Barker, J. R., Barker, JR, Asenov, A., Yang, L, Yang, L., Watling, JR, Adamu-Lema, F, Asenov, A, J.R. Watling, J.R. Barker, Liandeng Yang, F. Adam-Lema, A. Asenov   +14 more
core   +1 more source

Structure‐Guided Balancing of Ambipolar Transport Enables Symmetric Switching in Heterojunction Bilayer Organic Transistor Inverters

Advanced Functional Materials, EarlyView.
Balancing the spatially separated p‐ and n‐type transport pathways in heterojunction‐bilayer OTFTs enables symmetric inverter switching (VM ≈ 0.5VDD), whereas discrete integration of unipolar OTFTs gives polarity‐dependent and resistive responses. ABSTRACT High inverter performance in ambipolar organic electronics requires balanced channel strengths ...
Sohyun Choi, Young Yong Kim, Ji Ho Youk, Hoichang Yang   +3 more
wiley   +1 more source

Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella, Andrea Sessa, Yi‐Chen Tsai, Xuzhao Liu, Abdul Mannan, George Greaves, Yahya Saboon, Ben Spencer, Antonio Di Bartolomeo, Cinzia Casiraghi, Jessica Boland, Alessandro Grillo   +11 more
wiley   +1 more source

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances, 2019
This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D. S. Rawal, Seema Vinayak, Manoj Saxena   +6 more
doaj   +1 more source

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

, 2021
Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/
Andrei Vorobiev (11558728), Isabel Harrysson Rodrigues (11558671)   +1 more
core   +1 more source

Quantification of Phosphorylated Tau Protein in Alzheimer's Disease Patients’ Fluids With Electrolyte‐Gated Organic Transistor Biosensors

Advanced Healthcare Materials, EarlyView.
Dementia syndrome affects millions of people in the world, and Alzheimer's disease (AD) is the most common cause. We report the detection of the specific biomarker for AD, p‐tau‐181, from physiological to pathological concentrations in cerebrospinal fluid using an electrolyte‐gated organic transistor biosensor.
Marcello Berto, Pamela A. Manco Urbina, Alessandro Paradisi, Matteo Sensi, Najara Iacovino, Chiara Carbone, Roberta Bedin, Marcello Pinti, Fabio Biscarini, Giovanna Zamboni, Carlo A. Bortolotti   +10 more
wiley   +1 more source

Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode

, 2009
We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the ...
Husain, Muhammad, Li, Xiaoli V., de Groot, Cornelis H.   +2 more
core   +1 more source