Results 61 to 70 of about 10,169 (255)

High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface

AIP Advances, 2016
A perovskite oxide, BaSnO3, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research.
Kohei Fujiwara, Kazuki Nishihara, Junichi Shiogai, Atsushi Tsukazaki   +3 more
doaj   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells

Advanced Materials, EarlyView.
Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang, Christopher Wöpke, Toni Seiler, Jared Faisst, Mathias List, Meike Kuhn, Bekcy Joseph, Alexander Ehm, Dietrich R. T. Zahn, Yana Vaynzof, Eva M. Herzig, Roderick C. I. Mackenzie, Uli Würfel, Maria Saladina, Carsten Deibel   +14 more
wiley   +1 more source

ScAlN/GaN-on-Si (111) HEMTs for RF applications

Applied Physics Express
ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher two-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN.
Seif El Whibi, Nagesh Bhat, Yassine Fouzi, Nicolas De France, Jean-Claude De Jaeger, Zahia Bougrioua, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq   +9 more
doaj   +1 more source

Conductive Hydrogels for Exogenous Sensing and Cell Fate Control

Advanced Materials, EarlyView.
We engineer electrically conductive hydrogels by combining sulfated glycosaminoglycans with semiconducting polymers. These hydrogels bind bioactive proteins, including growth factors, whose release or retention can be modulated by low‐voltage stimulation. The hydrogels are also integrated as 3D channels in organic electrochemical transistors as part of
Teuku Fawzul Akbar, Carlos Alejandro Jimenez‐Rodriguez, Railia Biktimirova, Ilka Hermes, Thomas Kurth, My Duyen Pham, Mikhail Tsurkan, Jens Friedrichs, Francis L. C. Morgan, Hans Kleemann, Olga Guskova, Uwe Freudenberg, Peter Fratzl, Carsten Werner, Christoph Tondera, Ivan R. Minev   +15 more
wiley   +1 more source

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source

AlGaN/GaN Heterostructures in High Electron Mobility Transistors [PDF]

, 2018
AlGaN/GaN heterostructures are of high research and industrial interest for the production of high electron mobility transistors (HEMT) utilizing the two-dimensional electron gas (2DEG) induced at the interface due to polarization effects. In the current work, the effect of AlGaN thickness on 2DEG formation is under discussion. In particular, ultrathin
Caban, P., Thorpe, R., Feldman, L., Pedersen, K., Popok, V. N.   +4 more
openaire   +1 more source

AlGaN based high electron mobility transistors

, 2023
High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two- dimensional electron gas formed at the interface of AlGaN and GaN ...
openaire   +2 more sources

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

InP High-electron-mobility Transistors [PDF]

, 2021
Isabel Harrysson Rodrigues, Andrei Vorobiev   +1 more
openaire   +1 more source