Results 31 to 40 of about 61,033 (284)

Current saturation and Coulomb interactions in organic single-crystal transistors [PDF]

, 2008
Electronic transport through rubrene single-crystal field effect transistors (FETs) is investigated experimentally in the high carrier density regime (n ~ 0.1 carrier/molecule). In this regime, we find that the current does not increase linearly with the
A F Morpurgo, Bussac M N, H Xie, Hansen J P, I N Hulea, Lang I G, S Ciuchi, S Fratini   +7 more
core   +6 more sources

Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse

IEEE Journal of the Electron Devices Society, 2021
The dynamic on-resistance increase during power switching is one of the challenges of GaN-based HEMTs (high-electron-mobility transistors) for power electronic applications.
Ji-Xuan Yang, Dai-Jie Lin, Yuh-Renn Wu, Jian-Jang Huang   +3 more
doaj   +1 more source

Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier

Metrology
GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-
Gilad Orr, Moshe Azoulay, Gady Golan, Arnold Burger   +3 more
doaj   +1 more source

Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

AIP Advances, 2016
We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/
Ji Heon Kim, Tae Ho Kim, Hyunjea Lee, Young Ran Park, Woong Choi, Cheol Jin Lee   +5 more
doaj   +1 more source

High-performance $n$-type organic field-effect transistors with ionic liquid gates

, 2010
High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals.
Chen, Z., Facchetti, A., Minder, N., Morpurgo, A. F., Ono, S.   +4 more
core   +2 more sources

Quantifying the Plasmonic Generation Rate of Non‐Thermal Hot Carriers with an AlGaN/GaN High‐Electron‐Mobility Transistor

Advanced Science, 2021
Plasmonic generation of hot carriers in metallic nanostructures has attracted much attention due to its great potential in several applications. However, it is highly debated whether the enhancement is due to the hot carriers or the thermal effect. Here,
Chun‐Yu Li, Chi‐Ching Liu, Wei‐Chih Lai, Yung‐Chiang Lan, Yun‐Chorng Chang   +4 more
doaj   +1 more source

Dislocation scattering in a two-dimensional electron gas

, 2000
A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large number of line ...
Gossard, Arthur. C., Jena, Debdeep, Mishra, Umesh K.   +2 more
core   +1 more source

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
status ...
Decoutere, S., Marcon, D., Meneghesso, Gaudenzio, Meneghini, Matteo, Posthuma, N., Rizzato, V., Rossetto, Isabella, Stoffels, S., Van Hove, M., Wu, T. L., Zanoni, Enrico   +10 more
core   +2 more sources

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

AIP Advances, 2014
We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal ...
G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan   +17 more
doaj   +1 more source

Electrical Transport Properties of Single-Layer WS2 [PDF]

, 2014
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties.
Allain, Adrien, Dumcenco, Dumitru, Huang, Ying-Sheng, Kis, Andras, Ovchinnikov, Dmitry   +4 more
core   +2 more sources