Results 11 to 20 of about 16,548,618 (294)

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates [PDF]

Micromachines, 2019
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire.
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub   +7 more
doaj   +2 more sources

High Al-content AlGaN channel high electron mobility transistors on silicon substrate

e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures.
J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, F. Medjdoub   +10 more
doaj   +1 more source

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj   +1 more source

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines, 2021
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity.
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen   +6 more
doaj   +1 more source

Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Advanced Electronic Materials, 2023
A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study.
Tao Zhang, Yunze Liu, Fengzhi Wang, Xinhua Pan, Zhizhen Ye   +4 more
doaj   +1 more source

Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs [PDF]

, 2011
The electron mobility in Al2O3/InxGa1-xAs (x = 0.53, 0.65, or 0.75) metal-oxide-semiconductor field-effect transistors was analyzed for scattering by oxide charge, as well as interface charge and roughness, and compared with measured transfer ...
Xuan, Yi, Wang, Weike, Peide D. Ye, Hwang, James C. M., Weike Wang, Yi Xuan, Ye, Peide D., James C. M. Hwang   +7 more
core   +1 more source

Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII [PDF]

, 2004
This work reports on the development and fabrication of High Electron Mobility Transistors with a gate length of less than 30nm. The T-shaped gates were realized using a two-stage "bi-lithography" process that creates a T-shaped image in a bilayer of
Moran, D.A.J., Boyd, E., Thoms, S., Thayne, I.G., McLelland, H., Zhou, H., E. Boyd, H. McLelland, H. Zhou, D.A.J. Moran, S. Thoms, I.G. Thayne   +11 more
core   +1 more source

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Crystals, 2021
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the ...
Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim   +10 more
doaj   +1 more source

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]

, 2012
Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core   +1 more source

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Advanced Electronic Materials, 2023
Thin‐film transistors based on metal oxide semiconductors have become a mainstream technology for application in driving low‐cost backplanes of active matrix liquid crystal displays.
Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, Rodrigo Martins   +5 more
doaj   +1 more source