Results 21 to 30 of about 16,548,618 (294)

Plasma wave resonances in Graphene channels under controlled gate for high frequency applications

Materials Research Express, 2023
Several devices based on 2D materials have become interesting for high-frequency applications especially sensors, amplifiers and modulators of Terahertz frequencies.
AbdelHamid Mahi, Fatima Zohra Mahi, Luca Varani   +2 more
doaj   +1 more source

Characterization of single event effect simulation in InP-based High Electron Mobility Transistors

Results in Physics, 2022
The characteristics and mechanism of single event effects (SEEs) in InP-based High Electron Mobility Transistors (HEMTs) are investigated by technology computer-aided design (TCAD) simulations.
Shuxiang Sun, Linshuang Liu, Haitao Wu, Ruxian Yao, Hongying Mei, Hua Wen, Yinghui Zhong   +6 more
doaj   +1 more source

Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]

, 2014
Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Šonský, Jan, Caesar, Markus, Croon, Jeroen, Kuball, Martin, Hurkx, Godefridus, Uren, Michael J, Silvestri, Marco   +6 more
core   +1 more source

Contact Modeling and Analysis of InAs HEMT Transistors [PDF]

, 2011
Novel device concepts and better channel materials than Si are required to improve the performance of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs).
Povolotskyi, Michael, Park, Seung Hyun, M. Povolotsky, Park, Hong Hyun, Hong-Hyun Park, Park, Hong-Hyun, G. Klimeck, T. Kubis, Kubis, Tillmann, Seung Hyun Park, Steiger, Sebastian, S. Steiger, Klimeck, Gerhard, Salmani-Jelodar, Mehdi, M. Salmani-Jelodar   +14 more
core   +1 more source

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node [PDF]

, 2006
Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date.
Elgaid, Khaled, Moran, D.A.J., Elgaid, K., Stanley, C.R., Whyte, Griogair, Thayne, Iain, Whyte, G., McLelland, Helen, Stanley, Colin R., McLelland, H., Moran, David A. J., Thayne, I.   +11 more
core   +1 more source

Low-field mobility and high-field velocity of charge carriers in InGaAs/InP high-electron-mobility transistors [PDF]

, 2022
Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/
Harrysson Rodrigues, Isabel, Vorobiev, Andrei,, Harrysson Rodrigues, Isabel,, Vorobiev, Andrei   +3 more
core   +1 more source

Electron mobility in surface- and buried- channel flatband In_0.53Ga_0.47As MOSFETs with ALD Al₂O₃ gate dielectric. [PDF]

, 2011
In this paper, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried In_0.53Ga_0.47As channel devices employing an Atomic Layer Deposited (ALD) Al<sub&
Bentley, Steven J., Gary W. Paterson, Byungha Shin, Ignatova, O., Holland, M., Paterson, Gary W., Xu Li, Jaesoo Ahn, Ahn, J., Ignatova, Olesya, Thayne, Iain G., Bentley, S., Zhou, HP, Iain G. Thayne, Haiping Zhou, Stephen Thoms, McIntyre, P.C., Martin Holland, Thoms, S., Macintyre, D., Thayne, I., Asenov, Asen, Asen Asenov, Li, Xu, Shin, B., Shin, Byungha, Holland, Martin, Douglas Macintyre, Li, X., Asenova, A., Paterson, G., Zhou, H., Paul C. McIntyre, McIntyre, Paul C., Ahn, Jaesoo, Steven J. Bentley, Thoms, Stephen, Olesya Ignatova   +37 more
core   +1 more source

Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors

IEEE Journal of the Electron Devices Society, 2021
In this paper an improved Gray-Wolf-Optimization (GWO) based small-signal modeling is developed. The proposed method is demonstrated by modeling GaN High Electron Mobility Transistors (HEMTs) on SiC and Diamond substrates.
Anwar Jarndal
doaj   +1 more source

Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics

Sensors, 2022
Terahertz (THz) imaging is a powerful technique allowing us to explore non-conducting materials or their arrangements such as envelopes, packaging substances, and clothing materials in a nondestructive way.
Vincas Tamošiūnas, Linas Minkevičius, Ignotas Bučius, Domas Jokubauskis, Karolis Redeckas, Gintaras Valušis   +5 more
doaj   +1 more source