Results 21 to 30 of about 10,169 (255)

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors [PDF]

Scientific Reports, 2022
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano   +11 more
doaj   +2 more sources

GaAs Nanomembranes in the High Electron Mobility Transistor Technology [PDF]

Materials, 2021
A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm−2 and Hall mobility of 4590 cm2V−1s−1, which ...
Dagmar Gregušová, Edmund Dobročka, Peter Eliáš, Roman Stoklas, Michal Blaho, Ondrej Pohorelec, Štefan Haščík, Michal Kučera, Róbert Kúdela   +8 more
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High Al-content AlGaN channel high electron mobility transistors on silicon substrate

e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures.
J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, F. Medjdoub   +10 more
doaj   +1 more source

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj   +1 more source

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines, 2021
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity.
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen   +6 more
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Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Advanced Electronic Materials, 2023
A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study.
Tao Zhang, Yunze Liu, Fengzhi Wang, Xinhua Pan, Zhizhen Ye   +4 more
doaj   +1 more source

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Journal of Microelectronics and Electronic Packaging, 2022
We report on AlGaN HEMT-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal
Brianna Klein, Andrew Allerman, Albert Baca, Christopher Nordquist, Andrew Armstrong, Michael Van Heukelom, Anthony Rice, Victor Patel, Mary Rosprim, Lisa Caravello, Rebecca DeBerry, Jennifer Pipkin, Christopher Abate, Robert Kaplar   +13 more
openaire   +1 more source

Mechanistic Insights into High Electron Mobility in 2D Bi2O2Se Field-Effect Transistors [PDF]

ACS Omega
Anusit Thongnum
doaj   +2 more sources

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Advanced Electronic Materials, 2023
Thin‐film transistors based on metal oxide semiconductors have become a mainstream technology for application in driving low‐cost backplanes of active matrix liquid crystal displays.
Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, Rodrigo Martins   +5 more
doaj   +1 more source

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Crystals, 2021
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the ...
Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim   +10 more
doaj   +1 more source