Results 21 to 30 of about 61,033 (284)

Plasma wave resonances in Graphene channels under controlled gate for high frequency applications

Materials Research Express, 2023
Several devices based on 2D materials have become interesting for high-frequency applications especially sensors, amplifiers and modulators of Terahertz frequencies.
AbdelHamid Mahi, Fatima Zohra Mahi, Luca Varani   +2 more
doaj   +1 more source

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]

, 2014
Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Caesar, Markus, Croon, Jeroen, Hurkx, Godefridus, Kuball, Martin, Silvestri, Marco, Uren, Michael J, Šonský, Jan   +6 more
core   +3 more sources

Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]

, 2001
The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E., Rudge, P.J., Snowden, C.M., Steer, M.B.   +3 more
core   +1 more source

Characterization of single event effect simulation in InP-based High Electron Mobility Transistors

Results in Physics, 2022
The characteristics and mechanism of single event effects (SEEs) in InP-based High Electron Mobility Transistors (HEMTs) are investigated by technology computer-aided design (TCAD) simulations.
Shuxiang Sun, Linshuang Liu, Haitao Wu, Ruxian Yao, Hongying Mei, Hua Wen, Yinghui Zhong   +6 more
doaj   +1 more source

High mobility n-channel organic field-effect transistors based on soluble C60 and C70 fullerene derivatives [PDF]

, 2008
We report on n-channel organic field-effect transistors (OFETs) based on the solution processable methanofullerenes [6,6]-phenyl-C61-butyric acid ester ([60]PCBM) and [6,6]-phenyl-C71-butyric acid methyl ester ([70]PCBM).
Anthopoulos, Thomas D., Bradley, Donal D. C., Coelle, Michael, Colle, Michael, de Leeuw, Dago M., H. Wobkenberg, Paul, Hummelen, Jan C., Kronholm, David, Woebkenberg, Paul H.   +8 more
core   +2 more sources

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors [PDF]

, 2014
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge ...
Behnam, Ashkan, Bianchi, Massimiliano, Carrion, Enrique A., Islam, Sharnali, Malik, Akshay, Pop, Eric, Serov, Andrey Y., Sordan, Roman, Xiong, Feng   +8 more
core   +2 more sources

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

IEEE Journal of the Electron Devices Society, 2019
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation.
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton   +9 more
doaj   +1 more source

Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics

Sensors, 2022
Terahertz (THz) imaging is a powerful technique allowing us to explore non-conducting materials or their arrangements such as envelopes, packaging substances, and clothing materials in a nondestructive way.
Vincas Tamošiūnas, Linas Minkevičius, Ignotas Bučius, Domas Jokubauskis, Karolis Redeckas, Gintaras Valušis   +5 more
doaj   +1 more source

Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels [PDF]

, 2017
The experimental results from 8 nm diameter silicon nanowire junctionless field effect transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to 1.15 mA/m for 1.0 V and 2.52 mA/m for 1.8 V gate overdrive with an off-current
Amoroso, Salvatore M., Asenov, Asen, Dochioiu, Alexandru-Iustin, Georgiev, Vihar P., Lema, Fikru-Adamu, MacLaren, Donald A., Mirza, Muhammad M., Paul, Douglas J., Riddet, Craig, Towie, Ewan   +9 more
core   +1 more source