Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages. [PDF]
Lin Y +7 more
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Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
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Two-Dimensional Perovskite-Gated AlGaN/GaN High-Electron-Mobility-Transistor for Neuromorphic Vision Sensor. [PDF]
Hong X +9 more
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Pulsed operation and performance of commercial GaN HEMTs
The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The gain and power variations at pulse repetition frequencies (PRFs) in the range 100–400 kHz are presented.
Morris, KA, Beach, MA, Fornetti, F
core
Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa +10 more
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Defect‐Functionalization‐Mediated Tunneling Drives Nonlinear Photoemission in Perovskites
This cover illustration depicts CsPbBr3 perovskite nanocrystals embedded with functionalized defect vacancies, where electrons migrate through defect‐mediated pathways and emit as lightning‐like beams. The imagery visualizes the core discovery of our work—defect‐functionalization‐mediated tunneling enabling nonlinear photoemission, where deep‐level ...
Hang Ren +9 more
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Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. [PDF]
Jorudas J +7 more
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Multidimensional laser‐induced graphene (LIG) spanning from 0D to 3D architectures is comprehensively reviewed for multifunctional biomedical platforms, including biosensing, theranostics, and bioactive interface applications, which highlights its potentials for point‐of‐care diagnostics, wearable health monitoring, smart drug delivery, and tissue ...
Li Zhang +3 more
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Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. [PDF]
Liu CH +9 more
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