Results 131 to 140 of about 48,911 (290)

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel), 2022
Liu CH, Huang CR, Wang HC, Kang YJ, Chiu HC, Kao HL, Chu KH, Kuo HC, Chen CT, Chang KJ.   +9 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection

Crystals
Hydrogen gas sensing is critical for energy storage, industrial safety, and environmental monitoring. However, traditional sensors still face challenges in selectivity, sensitivity, and stability. This work introduces an innovative N-polar GaN/AlGaN high-
Long Ge, Haineng Bai, Yidi Teng, Xifeng Yang   +3 more
doaj   +1 more source

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. [PDF]

Materials (Basel), 2022
Jorudas J, Prystawko P, Šimukovič A, Aleksiejūnas R, Mickevičius J, Kryśko M, Michałowski PP, Kašalynas I.   +7 more
europepmc   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review. [PDF]

Micromachines (Basel), 2022
Haziq M, Falina S, Manaf AA, Kawarada H, Syamsul M.   +4 more
europepmc   +1 more source

Light‐Programmable Interfaces: From Molecular Photoswitching to Adaptive Membrane Separations

Advanced Materials Interfaces, EarlyView.
This review advances an interface‐centered framework for light‐responsive membranes, linking molecular photoswitches (azobenzene (AZO), spiropyran (SP), diarylethene (DAE), donor–acceptor Stenhouse adducts (DASA), photoacid) to integration strategies in polymeric, porous, self‐assembled, and mixed‐matrix systems.
Liangliang Zhang, Senlin Gu, Jianyang Zhao, Xiaojuan Hao, Lu Hua Li, Jihua Li, Lingxue Kong   +6 more
wiley   +1 more source

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study. [PDF]

Micromachines (Basel), 2022
Lee JH, Choi JH, Kang WS, Kim D, Min BG, Kang DM, Choi JH, Kim HS.   +7 more
europepmc   +1 more source

Microwave Absorption for Detection of Dirac Fermions in SnTe Films

Advanced Materials Interfaces, EarlyView.
Microwave absorption can detect Dirac fermions in samples exposed to the atmosphere. Results showed that although topological surface states are robust against environmental degradation, they are not detectable by electrical transport measurements. Hence, microwave absorption can detect Dirac fermions even in samples whose surfaces have deteriorated ...
Wellington P. do Prado, Jorge A. Navarro‐Giraldo, Muhammad Tahsin, Vinicius T. Santana, Eduardo Abramof, Paulo H. O. Rappl, Suelen de Castro, Marcelos L. Peres, Petr Neugebauer   +8 more
wiley   +1 more source

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy

Nature Communications
Gallium-nitride high-electron-mobility-transistor is an industrial leading contender for high-frequency and high-power radio-frequency applications. However, the record output-power-density has remained stagnant for nearly two decades, limited by high ...
Hong Zhou, Chaoqun Zhang, Kun Zhang, Zifeng Huang, Fang Liu, Min Zhou, Hehe Gong, Shijun Tang, Wenjun Liu, Baiqi Wang, Yaolong Dong, Jinwen Liu, Shutong Zhou, Zuyin Xu, Shuai Wang, Zhihong Liu, Shengrui Xu, Chunfu Zhang, Xinqiang Wang, Han Wang, Yachao Zhang, Zhe Cheng, Tangsheng Chen, Yuhao Zhang, Yue Hao, Jincheng Zhang   +25 more
doaj   +1 more source