Results 81 to 90 of about 12,413 (305)
Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors
, 2014 In order to enhance the performance of AlGaN/GaN high electron mobility transistor (HEMT) biosensor, millimeter grade AlGaN/GaN HEMT structure have been designed and successfully fabricated.
Cheng, JJ (程珺洁) +6 more
core
Electron optics in ballistic graphene [PDF]
, 2015 This thesis is centered on the experimental observation of electron-optics phenomena in graphene. In Chapter 2, graphene is introduced and the ability to form p-n junctions, with particular regard to electron optics experiments, is discussed.
Rickhaus, Peter
core +1 more source
Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics
Advanced Materials, EarlyView.Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova +10 more
wiley +1 more source
Small-signal transistor model in the design of microwave low-noise amplifiers
Технологія та конструювання в електронній апаратурі, 2004 A semi-analytical method for determining the parameters of high electron mobility transistors is presented, which requires only data on the transistor’s S-parameters measured over a wide frequency range.
P. A. Yemtsev
doaj
Analysis of transport properties and photoconductive response of single InAs nanowires
, 2009 Semiconductor nanowires are artificial structures of nanometer size with an approximately cylindric shape. They have an aspect ratio much larger than one so that, in most instances, they can be considered 1D systems.
COSTANTINI, DANIELE
core
Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells
Advanced Materials, EarlyView.Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang +14 more
wiley +1 more source
A GaN-based multi-threshold two-finger high electron mobility transistor with reduced third-order nonlinearity by nullification [PDF]
APL Electronic DevicesGaN-based high electron mobility transistors (HEMTs) have been proven immensely useful for high-power radio-frequency applications. While the primary focus has been power amplification and power-added efficiency, nonlinearity has not been optimized ...
D. Saha +6 more
doaj +1 more source
Conductive Hydrogels for Exogenous Sensing and Cell Fate Control
Advanced Materials, EarlyView.We engineer electrically conductive hydrogels by combining sulfated glycosaminoglycans with semiconducting polymers. These hydrogels bind bioactive proteins, including growth factors, whose release or retention can be modulated by low‐voltage stimulation. The hydrogels are also integrated as 3D channels in organic electrochemical transistors as part of
Teuku Fawzul Akbar +15 more
wiley +1 more source
, 2012 [[abstract]]We present the photoluminescence (PL) and Hall studies on the two-dimensional electron gas (2DEG) of etched and unetched In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor (mHEMT) structures.
Wu, Jenq-Shinn; Hung, C. C. ; Lu, C. T. ; Lin, D. Y.
core
Vertical high-mobility wrap-gated InAs nanowire transistor
, 2006 In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 ...
Fröberg, Linus +8 more
core +1 more source