Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations. [PDF]
Lee HP, Perozek J, Rosario LD, Bayram C.
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Unlocking the performance limits of 2T0C DRAM with Ω-shaped-gated single-crystal In<sub>2</sub>O<sub>3</sub> FETs. [PDF]
Zuo S +16 more
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A rubbery semiconducting heterojunction film for fully rubbery multiplexed near-infrared phototransistor arrays. [PDF]
Zhao YD +8 more
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Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]
Moscotin M +5 more
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6-18 GHz High-Efficiency Power Amplifier MMIC Based on Broadband Impedance Matching. [PDF]
Liu S, Ma X, Zhang Y, Bian Z, Xu C.
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Post-Moore two-dimensional integrated electronics for angstrom-nodes. [PDF]
Shen Z +5 more
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Transport signatures of gate-tunable topological phase transition in ultrathin <i>β</i>-Ag<sub>2</sub>Te. [PDF]
Ai W +11 more
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Highly Efficient Conductivity Modulation via Stacked Multi-Gate Graphene Ambipolar Transistors. [PDF]
Nie C +5 more
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Analytical Solution for the Potential Distribution in the Channel of A Graphene Field-Effect Transistor Validated with a Custom-Fabricated Test Platform. [PDF]
Cantudo A +5 more
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Quinoid-controlled bond-length alternation enables high-mobility non-fused π-conjugated polymers. [PDF]
Mikie T +5 more
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