Results 61 to 70 of about 12,413 (305)
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
Advanced Materials, EarlyView.The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
Nano-Micro LettersHighlights Violet arsenic phosphorus (VP-As) single crystals were synthesized and characterized by single crystal X-ray diffraction to be P83.4As0.6 (CSD-2408761), the P12 is occupied by arsenic/phosphorus as a mixed occupancy site.
Rui Zhai +9 more
doaj +1 more source
Role of the Recombination Zone in Organic Light‐Emitting Devices
Advanced Materials, EarlyView.This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley +1 more source
Modeling of high electron mobility transistors
Технологія та конструювання в електронній апаратурі, 2003 The paper considers issues of modeling high electron mobility transistors (HEMT). The requirements for HEMT models are outlined. The most common types of models are described: small-signal, noise, nonlinear, and distributed.
P. A. Emtsev
doaj
Analysis and improvement of self-heating effect based on GaN HEMT devices
Materials Research Express, 2022 Gallium nitride high electron mobility transistor (GaN HEMT) applications in high-power and high-frequency environments can lead to high device temperatures due to the self-heating effect, thus limiting device performance and reliability.
Zhipeng Zuo, Naiyun Tang, Hui Chen
doaj +1 more source
Monte Carlo simulation of silicon-germanium transistors [PDF]
, 2002 Self-consistent Monte Carlo simulation studies of n-channel Si/SiGe modulation doped field effect transistors (MODFETs) and silicon-on-insulator lateral bipolar junction transistors (SOI- LBJTs) are reported in this thesis. As a preliminary to the device
Yangthiasong, Anucha +1 more
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Advanced Materials, EarlyView.A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho +3 more
wiley +1 more source
Advanced Materials, EarlyView.The field of polymer thermoelectrics is entering a new era, featuring breakthroughs in addressing the conventional performance disparity between p‐type and n‐type polymers, pioneering doping frontiers, and sophisticated decoupling strategies. This review explores innovations in molecular design and superior stabilities, bridging the gap from ...
Suhao Wang
wiley +1 more source
Correlated Charge Transport in an Organic Coulomb Glass
Advanced Materials, EarlyView.ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler +3 more
wiley +1 more source
, 2014 An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg2+. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg2+ and ...
Cheng JJ(程珺洁) +4 more
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