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High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy

open access: yesNature Communications
Gallium-nitride high-electron-mobility-transistor is an industrial leading contender for high-frequency and high-power radio-frequency applications. However, the record output-power-density has remained stagnant for nearly two decades, limited by high ...
Hong Zhou   +25 more
doaj   +1 more source

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