Results 51 to 60 of about 17,841 (221)

Switched-capacitor neural networks for linear programming [PDF]

, 1988
A circuit for online solving of linear programming problems is presented. The circuit uses switched-capacitor techniques and is thus suitable for monolithic implementation.
Domínguez Castro, Rafael, Huertas Díaz, José Luis, Rodríguez Vázquez, Ángel Benito, Rueda Rueda, Adoración   +3 more
core   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

A Temperature Analysis of High-power AlGaN/GaN HEMTs [PDF]

, 2006
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies.
Borghs, G., Das, J., Derluyn, J., Germain, M., Ji, H., Kuball, M., Oprins, H., Ruythooren, W., Sarua, A.   +8 more
core   +2 more sources

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor [PDF]

, 2006
We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor.
Akwoue-Ondo, A., Bollaert, S., Chusseau, L., Nouvel, P., Shchepetov, A., Teppe, F., Torres, Jérémi   +6 more
core   +3 more sources

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh, Jens Herfort, Andreas Fiedler, Oliver Brandt   +3 more
wiley   +1 more source

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Energies, 2023
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior.
Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley   +5 more
doaj   +1 more source

Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors

, 2019
The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport, solid-state material dynamics, and semiconductor device characterization.
Bagnall, Kevin R., Englund, Dirk R., Foy, Christopher, Trusheim, Matthew E., Walsh, Michael, Wang, Evelyn N., Zhang, Lenan   +6 more
core   +1 more source

Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design [PDF]

, 2010
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary
Albert, Cao, Yu, Fay, Patrick, Ganguly, Satyaki, Goodman, Kevin, Jena, Debdeep, Karda, Kamal, Kosel, Thomas, Li, Guowang, Lian, Chuanxin, Protasenko, Vladimir, Simon, John, Verma, Jai, Wang, Xing, Huili   +14 more
core   +1 more source

Impact of COVID‐19 and CFTR Modulators on Cystic Fibrosis: A Real‐World Analysis of Care Patterns

Pediatric Pulmonology, Volume 61, Issue 4, April 2026.
ABSTRACT Introduction Novel therapeutics and rapid expansion of telehealth have reshaped cystic fibrosis (CF) care; however, the impact on visit patterns and equitable access across the CF population remains unclear. We characterized changes in visit patterns from 2017 to 2022 and the association of sociodemographic and clinical factors with visit ...
Alexandra C. Hinton, Edmund H. Sears Jr., Sara Lopez‐Pintado, Jonathan B. Zuckerman   +3 more
wiley   +1 more source