Results 51 to 60 of about 15,181 (229)

Two‐Dimensional Carrier Gas at Diamond and Cubic Boron Nitride (111) Interface: Role of Interfacial Bonding and Defects

Advanced Electronic Materials, EarlyView.
The study identifies four bonding configurations at the (111) diamond/c‐BN interface, where B or N atoms bond with either one or three carbon atoms. C‐B bonds create two‐dimensional (2D) hole gases, while C–N bonds create electron gases. Three‐C‐bonded interfaces show three times higher carrier density than one‐C‐bonded interfaces.
Shikha Saini, Konstantin Klyukin, Mengren Bill Liu, Mark J. Polking, Bilge Yildiz   +4 more
wiley   +1 more source

Electrical Performances of AlInN/GaN HEMTs. A Comparison with AlGaN/GaN HEMTs with similar technological process [PDF]

, 2011
International audienceA study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper.
Guillaume Callet, Di Forte Poisson, M.A., Delage, S.L., Raphaël Aubry, Chartier, E., Stéphane Piotrowicz, Mourad Oualli, Jérémy Dufraisse, Jacquet, J.C., Aubry, R., Sylvain L. Delage, Piotrowicz, S., Eric Chartier, Olivier Jardel, Jardel, Olivier, Callet, Guillaume, Morvan, E., Jean-Claude Jacquet, Michele Piazza, Oualli, M., Reveyrand, Tibault, Nicolas Sarazin, Tibault Reveyrand, Piazza, Michele, Marie-Antoinette Di Forte Poisson, Dufraisse, Jérémy, Erwan Morvan, Sarazin, N.   +27 more
core   +1 more source

Demonstration of GaN‐Based HEMTs Using Extremely Thin h‐BN Passivation Layer and Air Spacer for the RF Performance Improvement

Advanced Electronic Materials
GaN‐based high electron mobility transistors (HEMTs) is demonstrated using an extremely thin (≈ 5 nm) h‐BN passivation layer and air spacer, for the first time.
Sung‐Jae Chang, Seokho Moon, Junhyung Jeong, Hyun‐Wook Jung, Jawon Kim, Semi Im, Jaesub Song, Changuk Ji, Seonghyeon Pak, Il‐Gyu Choi, Youn‐Sub Noh, Seong‐Il Kim, Sang‐Heung Lee, Ho‐Kyun Ahn, Dong‐Min Kang, Jong Kyu Kim, Jong‐Won Lim   +16 more
doaj   +1 more source

Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers

CES Transactions on Electrical Machines and Systems, 2017
Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than ...
Wei Qian, Xi Zhang, Yongsheng Fu, Juncheng Lu, Hua Bai   +4 more
doaj   +1 more source

Bayesian Optimization–Reinforcement Learning Hybrid Framework for a‐IGZO Thin‐Film Transistor Compact Model Parameter Extraction in 2T0C Dynamic Random Access Memory Applications

Advanced Intelligent Systems, EarlyView.
A training‐free two‐stage BO–RL framework extracts compact model parameters for a‐IGZO TFTs, reaching BO‐level fitting quality at a constant per‐simulation optimization cost. Bayesian optimization performs exploration and provides an optimized starting point.
Seunghyun Son, Taejun Ha, Taeyoung Nam, Yoonyoung Chung, Sunmean Kim   +4 more
wiley   +1 more source

0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate [PDF]

, 2001
New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length.
Lepilliet, S., Bollaert, S., Wallart, X., Pocas, S., Jalaguier, E., Cappy, A., Aspar, B.   +6 more
core   +1 more source

Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours [PDF]

, 2023
This work investigates the power GaN-HEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show that GaN-HEMTs could switch slower
Marsic, Vlad, Videt, Arnaud, Idir, Nadir, Faramehr, Soroush, Lu, Xuyang, Marsic, Vlad; id_orcid, Igic, Petar   +6 more
core   +1 more source

Impact of Highly Effective Modulator Therapy on Olfactory‐Specific Gene Expression in People With Cystic Fibrosis

International Forum of Allergy &Rhinology, EarlyView.
ABSTRACT Background Chronic rhinosinusitis is common in people with cystic fibrosis (PwCF). Highly effective modulator therapy (HEMT) has been shown to improve sinonasal outcomes. However, prior studies failed to show improvement in objective olfaction with HEMT, and the impact of HEMT on olfactory‐specific quality of life has yet to be studied ...
Michael R. Xiang, Ankit Chauhan, Gina Hong, Denis Hadjiliadis, Daniel Dorgan, Michael M. Rey, Samantha Kane, James N. Palmer, Nithin D. Adappa, Noam A. Cohen, Michael A. Kohanski, Jennifer E. Douglas   +11 more
wiley   +1 more source

High Performance CuMetallized GaAs HEMTs Processing and Reliability

, 1998
AlGaAs/GaAs based high electron mobility transistors (HEMTs) with Cu/Ti metallized gates have been fabricated. Copper gates were used to achieve low gate resistance and to minimize the hydrogen induced device degradation.
T. Feng, A. Dimoulas, N. Strifas, A. Christou   +3 more
core   +1 more source

Millimeter-wave power InP HEMTs: challenges and prospects [PDF]

, 1998
At this time, GaAs PHEMTs exhibit higher power output than InP HEMTs at 60 and 94 GHz. InP HEMTs, however, feature power-added efficiency values that exceed GaAs PHEMTs by about 5 to 20 percentage points at 94 GHz.
del Alamo, J. A., Blanchard, R. R., Somerville, M. H.   +2 more
core   +1 more source