Results 51 to 60 of about 9,883 (230)

An ultra low power MMIC amplifier using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As metamorphic HEMT

, 2010
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit ...
Lok, L.B., Chi-Jeon Hwang, Lai Bun Lok, Holland, Martin, Holland, M., Thayne, I.G., Hwang, C.J., Elgaid, Khaled, Elgaid, K., Hwang, C-J., Iain G. Thayne, Chong, Harold M H, Thayne, Iain G, Martin Holland, Hwang, Chi-Jeon, Khaled Elgaid, Harold M. H. Chong, Chong, Harold, Chong, H.M.H.   +18 more
core   +1 more source

Millimeter-wave power InP HEMTs: challenges and prospects [PDF]

, 1998
At this time, GaAs PHEMTs exhibit higher power output than InP HEMTs at 60 and 94 GHz. InP HEMTs, however, feature power-added efficiency values that exceed GaAs PHEMTs by about 5 to 20 percentage points at 94 GHz.
del Alamo, J. A., Blanchard, R. R., Somerville, M. H.   +2 more
core   +1 more source

Experimental verification of mobility modeling for N-polar GaN HEMTs [PDF]

AIP Advances
N-polar GaN high-electron-mobility transistors (HEMTs) show unique transfer characteristics originating from the band structure related to the inverted HEMTs, and some scattering mechanisms are suggested theoretically.
Akira Mukai, Shigeki Yoshida, Junya Yaita, Akihiro Hayasaka, Maui Hino, Junji Kotani, Kozo Makiyama, Ken Nakata   +7 more
doaj   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation

, 2011
AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and characterized. A variety of techniques were used to improve device performance, such as AlN interlayer, silicon nitride passivation, high aspect ratio T-shaped ...
Renping Zhang, Zhang, Renping, Yang, Fuhua, Yan, Wei, Zhang, R.(zhangrenping@semi.ac.cn), Xiaoliang Wang, Fuhua Yang, Wei Yan, Wang, Xiaoliang   +8 more
core   +1 more source

Aussagkräftige Simulationen von AlGaN/GaN HEMTS

, 2022
S.131-134For the development of next-generation AlgaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required.
Vitanov, S., Quay, Rüdiger, Palankovski, V., Murad, S., Rödle, T., Selberherr, S.   +5 more
core   +1 more source

Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

Micromachines, 2023
GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. However, the charge trapping effect has limitations to its performance.
Kun-Ming Chen, Chuang-Ju Lin, Chia-Wei Chuang, Hsuan-Cheng Pai, Edward-Yi Chang, Guo-Wei Huang   +5 more
doaj   +1 more source

Accelerating Full‐Wave Antenna Optimization: An Adaptive Surrogate‐Assisted Differential Evolution Framework

Engineering Reports, Volume 8, Issue 5, May 2026.
An adaptive surrogate‐assisted differential evolution framework integrates machine learning‐based surrogate modeling with selective full‐wave electromagnetic validation to accelerate antenna optimization. A CST–Python workflow combines Latin‐hypercube sampling, cross‐validated model selection, and iterative dataset refinement to guide the search toward
Muhammad Farooq, Shahid Bashir, Mohammad Haseeb Zafar, Ruhul Amin Khalil   +3 more
wiley   +1 more source

0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate [PDF]

, 2001
New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length.
Lepilliet, S., Bollaert, S., Wallart, X., Pocas, S., Jalaguier, E., Cappy, A., Aspar, B.   +6 more
core   +1 more source

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source