Results 51 to 60 of about 1,513 (185)
Low Insertion‐Loss High Power X‐Band SPDT Transmit/Receive Switches in 250 nm GaN HEMT
Microwave and Optical Technology Letters, Volume 68, Issue 6, June 2026.ABSTRACT We present three X‐band transmit/receive (T/R) switches utilizing single‐pole double‐throw (SPDT) structures in 250 nm GaN HEMT technology. The first T/R switch was designed to achieve low insertion loss by constructing the SPDT structure with a series λ/4 transmission line (T‐line) and meticulously selected two HEMT switches in parallel for ...
Tae‐Hoon Kim +3 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2020 In this work, a comprehensive, TCAD based design approach for mmWave (mmW) GaN HEMTs is presented. Unique trade-offs between epi-layer design and HEMT's mmW performance are discussed. Effect of surface states on cut off frequency is modeled and presented.
Ankit Soni, Mayank Shrivastava
doaj +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
Advanced Optical Materials, Volume 14, Issue 19, 22 May 2026.Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou +22 more
wiley +1 more source
Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers
CES Transactions on Electrical Machines and Systems, 2017 Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than ...
Wei Qian +4 more
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Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting
ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao +12 more
wiley +1 more source
Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
IEEE Journal of the Electron Devices Society, 2017 An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under ...
Shih-Chien Liu +8 more
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Influence of Displacement Damage Effect on AlGaN/GaN HEMT Devices
Yuanzineng kexue jishu, 2023 AlGaN/GaN high electron mobility transistors (HEMTs) have excellent physical and chemical stability, which gives it great potential for use in consumer, industrial and space applications.
CHEN Baiwei1,2;SUN Changhao1,2;MA Teng2;SONG Hongjia1;WANG Jinbin1;PENG Chao2;ZHANG Zhangang2;LEI Zhifeng2;LIANG Chaohui2,*;ZHONG Xiangli1,*
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Engineering Reports, Volume 8, Issue 5, May 2026.An adaptive surrogate‐assisted differential evolution framework integrates machine learning‐based surrogate modeling with selective full‐wave electromagnetic validation to accelerate antenna optimization. A CST–Python workflow combines Latin‐hypercube sampling, cross‐validated model selection, and iterative dataset refinement to guide the search toward
Muhammad Farooq +3 more
wiley +1 more source
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 5, May 2026.Passivated Al‐rich AlGaN channel metal insulator semiconductor HEMTs on sapphire demonstrate breakdown voltages exceeding 2 kV with average electric fields above 1.3 MV/cm. A peak Baliga figure of merit of 325 MW/cm2 is achieved, representing a significant improvement over prior reports.
Khush Gohel +8 more
wiley +1 more source