Results 61 to 70 of about 9,883 (230)

Kilo‐Volt Class Al0.65Ga0.35N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm2 Baliga Figure of Merit on Sapphire Substrate

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 5, May 2026.
Passivated Al‐rich AlGaN channel metal insulator semiconductor HEMTs on sapphire demonstrate breakdown voltages exceeding 2 kV with average electric fields above 1.3 MV/cm. A peak Baliga figure of merit of 325 MW/cm2 is achieved, representing a significant improvement over prior reports.
Khush Gohel, Swarnav Mukhopadhyay, Md Tahmidul Alam, Jiahao Chen, Surjava Sanyal, Ruixin Bai, Guangying Wang, Shubhra Pasayat, Chirag Gupta   +8 more
wiley   +1 more source

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

AIP Advances, 2022
We report GaN high-electron-mobility transistors (HEMTs) with a thick (7.7 µm) GaN buffer on a Czochralski low resistivity Si (LRS) substrate. The GaN HEMTs exhibit high performance for both radio-frequency (RF) amplification and power conversion.
Wenjie Song, Jie Zhang, Zheyang Zheng, Sirui Feng, Xuelin Yang, Bo Shen, Kevin J. Chen   +6 more
doaj   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Enhancement‐mode AlGaN/GaN HEMTs on silicon substrate

, 2006
High performance enhancement-mode AlGaN/GaN HEMTs (E-HEMTs) were demonstrated with samples grown on low-cost silicon substrate for the first time. The fabrication process is based on fluoride-based plasma treatment of the gate region and post-gate ...
Wang, Deliang, Deliang Wang, Lau, Kei May, Kevin J. Chen, Cai, Yong, Yong Cai, Chen, Kevin J., Baoshun Zhang, Jia, Shuo, Kei May Lau, Shuo Jia, Zhang, Baoshun   +11 more
core   +1 more source

Hydrodynamische Modellierung von AlGaN/GaN HEMTs

, 2022
S.273-276For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach is used to properly model the electron ...
Vitanov, S., Quay, Rüdiger, Palankovski, V., Murad, S., Rödle, T., Selberherr, S.   +5 more
core   +1 more source

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application

IEEE Access, 2019
Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN) high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel application feasible for GaN HEMTs. Meanwhile, paralleled GaN HEMTs
Yajing Zhang, Jianguo Li, Jiuhe Wang
doaj   +1 more source

Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh, Jens Herfort, Andreas Fiedler, Oliver Brandt   +3 more
wiley   +1 more source

FABRICATION AND CHARACTERIZATION OF SUBMICRON FABRICATION AND CHARACTERIZATION OF SUBMICRON AlGaN/GaN HEMTS

, 2020
Using our in-house 0.3 µm mushroom gate process, AlGaN/GaN high electron mobility transistors (HEMTs) with total gate periphery up to 0.6 mm were fabricated and characterized. The transistors were processed on an AlGaN/GaN heterostructure grown by MBE on
Joakim Eriksson, Hemts V Desmaris, J Eriksson, Niklas Rorsman, Vincent Desmaris, Herbert Zirath, H Zirath, Algan / Gan, N Rorsman   +8 more
core  

Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs

IEEE Journal of the Electron Devices Society, 2020
In this work, a comprehensive, TCAD based design approach for mmWave (mmW) GaN HEMTs is presented. Unique trade-offs between epi-layer design and HEMT's mmW performance are discussed. Effect of surface states on cut off frequency is modeled and presented.
Ankit Soni, Mayank Shrivastava
doaj   +1 more source