Results 61 to 70 of about 15,181 (229)

Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs

IEEE Journal of the Electron Devices Society, 2020
In this work, a comprehensive, TCAD based design approach for mmWave (mmW) GaN HEMTs is presented. Unique trade-offs between epi-layer design and HEMT's mmW performance are discussed. Effect of surface states on cut off frequency is modeled and presented.
Ankit Soni, Mayank Shrivastava
doaj   +1 more source

Olfactory Function in Cystic Fibrosis: Outcome Measures, Olfactory Dysfunction Prevalence and the Impact of Management—A Systematic Review and Meta‐Analysis

International Forum of Allergy &Rhinology, EarlyView.
ABSTRACT Background Olfactory dysfunction (OD) is an increasingly recognized but under‐investigated comorbidity of cystic fibrosis (CF). Its prevalence, assessment methods, and response to CF‐directed treatment, including highly effective modulator therapy (HEMT) remains incompletely characterized.
Luca Cox, Kofi Cox, Katherine Whitcroft, Susanne Weise, Sonal Kansra, Eishaan Bhargava   +5 more
wiley   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Interface Engineering in Piezoelectric‐on‐Insulator Platforms: Coupling of Electrons, Photons, and Phonons for Multifunctional Integration

Electron, EarlyView.
The underlying interface physics and engineering strategies across key POI material systems, including LiNbO3/Si, LiNbO3/SiC, LiNbO3/diamond, and AlN/diamond, were reviewed. The key engineering strategies such as atomic‐scale bonding optimization, nanostructuring, ultrathin phonon‐bridge interlayers, and ferroelectric domain wall engineering for ...
Yunjia Bao, Zhiqiang Wang, Rongbang Yang, Gongbin Tang, Ruiqiang Guo, Kunfeng Chen, Wen Hu   +6 more
wiley   +1 more source

Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

IEEE Journal of the Electron Devices Society, 2019
The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency ...
Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien   +6 more
doaj   +1 more source

Care‐Based Disruption, Creative Practice and Collaborative Empathetic Histories

History, EarlyView.
Abstract This Forum essay examines the value of collaboration when creatively engaging with history as a means of developing empathy, care, and understanding. Creative and collaborative histories provide space to address the harmful misconceptions and preconceptions entangled in capitalist and colonial narratives.
SIERRA MCKINNEY, KATHERINE COOK
wiley   +1 more source

Voltage-margin limiting mechanisms of AlScN-based HEMTs

, 2023
In this work, the off-state characteristics of AlScN/GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and directly compared to an AlGaN- and an AlN-HEMT grown in the same MOCVD. Pinch-off
Brückner, Peter, Krause, Sebastian, Streicher, Isabel, Leone, Stefano, Döring, Philipp, Mikulla, Michael, Quay, Rüdiger, Waltereit, Patrick   +7 more
core   +1 more source

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

, 2007
We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from beta-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs).
Pozzovivo, G., Kuzmik, J., Pogany, D., Carlin, J. F., Grandjean, N., Bertagnolli, E., Strasser, G., Abermann, S., G Strasser, N Grandjean, J-F Carlin, D Pogany, S Abermann, J Kuzmik, G Pozzovivo, E Bertagnolli   +15 more
core   +1 more source

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

AIP Advances, 2022
We report GaN high-electron-mobility transistors (HEMTs) with a thick (7.7 µm) GaN buffer on a Czochralski low resistivity Si (LRS) substrate. The GaN HEMTs exhibit high performance for both radio-frequency (RF) amplification and power conversion.
Wenjie Song, Jie Zhang, Zheyang Zheng, Sirui Feng, Xuelin Yang, Bo Shen, Kevin J. Chen   +6 more
doaj   +1 more source