Results 61 to 70 of about 17,841 (221)
Experimental verification of mobility modeling for N-polar GaN HEMTs [PDF]
AIP AdvancesN-polar GaN high-electron-mobility transistors (HEMTs) show unique transfer characteristics originating from the band structure related to the inverted HEMTs, and some scattering mechanisms are suggested theoretically.
Akira Mukai +7 more
doaj +1 more source
Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling [PDF]
, 2015 We propose a parameterized macromodeling methodology to effectively and accurately carry out dynamic electrothermal (ET) simulations of electronic components and systems, while taking into account the influence of key design parameters on the system ...
d'Alessandro, Vincenzo +6 more
core +1 more source
physica status solidi (b), Volume 263, Issue 4, April 2026.This study investigates the structural, elastic, and piezoelectric properties of Sc‐doped wurtzite nitrides using first‐principles calculations. A strong compositional dependence of elastic and piezoelectric coefficients is observed, with significant nonlinearities providing insights into the tunability of these materials for piezoelectric applications.
Hang Cui +3 more
wiley +1 more source
Micromachines, 2023 GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. However, the charge trapping effect has limitations to its performance.
Kun-Ming Chen +5 more
doaj +1 more source
Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: a simulation study [PDF]
, 1998 The impact of In<sub>x</sub>Al<sub>1-x</sub>As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated.
Asenov, A. +4 more
core +1 more source
Severe Hypoxia Reduces Adenylyl Cyclase 6 Expression and Function in Bronchial Epithelial Cells
FASEB BioAdvances, Volume 8, Issue 4, April 2026.Adenylyl cyclase 6 (AC6) plays an important role in the generation of cyclic adenosine monophosphate (cAMP) in the lungs. In cystic fibrosis, excessive mucus production and reduced mucociliary clearance create regions of severe hypoxia that can affect cell functions.
Ryan H. Cunnington +5 more
wiley +1 more source
Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application
IEEE Access, 2019 Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN) high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel application feasible for GaN HEMTs. Meanwhile, paralleled GaN HEMTs
Yajing Zhang, Jianguo Li, Jiuhe Wang
doaj +1 more source
On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field [PDF]
, 2019 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals.
Bauch, Thilo +6 more
core +2 more sources
IEEE AccessGaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan +4 more
doaj +1 more source
GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications [PDF]
, 2016 This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance.
Eblabla, Abdalla +4 more
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