Results 61 to 70 of about 1,513 (185)

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances, 2016
In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse ...
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Xiaoyan Hu, Kai Cheng, Hong-yu Yu   +7 more
doaj   +1 more source

High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains

IEEE Journal of the Electron Devices Society, 2018
In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel
Weihang Zhang, Jincheng Zhang, Ming Xiao, Li Zhang, Yue Hao   +4 more
doaj   +1 more source

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

AIP Advances, 2017
This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN ...
Xinke Liu, Hong Gu, Kuilong Li, Lunchun Guo, Deliang Zhu, Youming Lu, Jianfeng Wang, Hao-Chung Kuo, Zhihong Liu, Wenjun Liu, Lin Chen, Jianping Fang, Kah-Wee Ang, Ke Xu, Jin-Ping Ao   +14 more
doaj   +1 more source

Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

IEEE Journal of the Electron Devices Society
The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing.
Junjie Li, Johan Bergsten, Arsalan Pourkabirian, Jan Grahn   +3 more
doaj   +1 more source

Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm

APL Materials
This study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth.
Kohei Ueno, Ryota Maeda, Takao Kozaka, Hiroshi Fujioka   +3 more
doaj   +1 more source

An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs

IEEE Journal of the Electron Devices Society
High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be designed and optimized by accurately considering the coupling of
Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja   +5 more
doaj   +1 more source

Research progress on irradiation effect of InP-based high electron mobility transistors

He jishu
Indium phosphide (InP)-based high electron mobility transistors (HEMTs) have been widely adopted in space communication systems such as satellites, manned spaceflight, and deep space exploration due to their high frequency and gain, and low noise ...
FANG Renfeng, ZHOU Shuxing, CAO Wenyu, WEI Yanfeng, WANG Jingyang, LI Shusen, YAN Jiasheng, LIANG Guijie   +7 more
doaj   +1 more source

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

IEEE Journal of the Electron Devices Society, 2019
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation.
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton   +9 more
doaj   +1 more source

GaN HEMT Oscillators with Buffers

Micromachines
With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage.
Sheng-Lyang Jang, Ching-Yen Huang, Tzu Chin Yang, Chien-Tang Lu   +3 more
openaire   +2 more sources