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Environmental DNA, Volume 8, Issue 2, March/April 2026.Goldfish eDNA samples were collected from urban stormwater ponds spanning a wide abundance gradient and paired with conventional sampling and whole‐pond draining to estimate population size. eDNA concentration estimates were highly replicable between independent laboratories (mean pond eDNA concentration R2 = 0.99), and both detection probability and ...
Ian S. Smith +11 more
wiley +1 more source
Pediatric Pulmonology, Volume 61, Issue 3, March 2026.ABSTRACT Background The metabolic impact of poor diet quality in cystic fibrosis (CF), coupled with a rise in obesity and modulator‐induced weight gain, is a growing concern. Our study aimed to understand knowledge and perspectives regarding dietary changes on modulators, and how measured nutrient intake changes with different dietary patterns in ...
Julianna Bailey +5 more
wiley +1 more source
High Performance CuMetallized GaAs HEMTs Processing and Reliability
, 1998 AlGaAs/GaAs based high electron mobility transistors (HEMTs) with Cu/Ti metallized gates have been fabricated. Copper gates were used to achieve low gate resistance and to minimize the hydrogen induced device degradation.
T. Feng +3 more
core +1 more source
Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs
, 2023 Although the steady-state thermal behavior of GaN-based high-electron-mobility transistors (HEMTs) has been studied extensively, significantly fewer studies have considered their thermal capacitance. In this article, frequency domain characterization has
Rodriguez, Raul +5 more
core +1 more source
AIP Advances, 2016 In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse ...
Bin Dong +7 more
doaj +1 more source
GaN HEMT Oscillators with Buffers
MicromachinesWith their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage.
Sheng-Lyang Jang +3 more
openaire +2 more sources
High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains
IEEE Journal of the Electron Devices Society, 2018 In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel
Weihang Zhang +4 more
doaj +1 more source
AIP Advances, 2017 This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN ...
Xinke Liu +14 more
doaj +1 more source
We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of f(T) = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3
Benedickter, Hansruedi +7 more
core +1 more source
IEEE Journal of the Electron Devices SocietyThe InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing.
Junjie Li +3 more
doaj +1 more source