4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications. [PDF]
Chen C +7 more
europepmc +1 more source
Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]
Kim DW +10 more
europepmc +1 more source
Dietary recommendations for people with cystic fibrosis, a relevantly changing field. [PDF]
Mainz JG, Zagoya C.
europepmc +1 more source
Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]
Tan WH +7 more
europepmc +1 more source
Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]
Lee KH, Yang Y, Heo J, Kim JH.
europepmc +1 more source
An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]
Miao Y, Yuan Q, Wang C, Cheng J.
europepmc +1 more source
The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]
Shen Z +10 more
europepmc +1 more source
Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]
Won YH +6 more
europepmc +1 more source
Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses. [PDF]
Xing D, Liu H, Su M, Liu X, Liu C.
europepmc +1 more source
Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]
Wang L +10 more
europepmc +1 more source

