Results 81 to 90 of about 15,181 (229)

High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains

IEEE Journal of the Electron Devices Society, 2018
In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel
Weihang Zhang, Jincheng Zhang, Ming Xiao, Li Zhang, Yue Hao   +4 more
doaj   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, Volume 36, Issue 73, 10 September 2026.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye, Davide Orlandini, Seungheon Shin, Andy Allerman, Damena Agonafer, Siddharth Rajan, Samuel Graham   +6 more
wiley   +1 more source

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

, 2007
A multienergy oxygen ion implantation process wasdemonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free
Makimoto, Toshiki, chang, Chia-Ta, Zirath, Herbert,, Lu, Chung-Yu, Shiu, Jin-Yu,, Kumakura, Kazuhide, Huang, Jui-Chien, Desmaris, Vincent,, Rorsman, Niklas,, Chang, Edward-Yi   +9 more
core   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, Volume 3, Issue 3, Page 233-267, September 2026.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications

CES Transactions on Electrical Machines and Systems, 2017
Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices ...
Lucas Lu, Guanliang Liu, Kevin Bai
doaj   +1 more source

Effect of Phosphate Fertilization and Cutting Date Improves Nutritional Status and Productive Parameters of a Tropical Forage Legume

Legume Science, Volume 8, Issue 3, September 2026.
ABSTRACT The use of chemical fertilizers is economically and environmentally costly to produce and apply. Therefore, optimized fertilizer use is critical to increase or maintain crop yields. We evaluated the productive and nutritional characteristics of the Stylosanthes cv “Campo Grande” submitted to different cutting date and phosphate fertilization ...
Daniele de Jesus Ferreira, Higo Gustavo da Silva Rocha, Aline Lima dos Anjos, Henrique Nunes Parente, Michelle de Oliveira Maia Parente, Rosane Cláudia Rodrigues, Ricardo Martins Araújo Pinho, Edson Mauro Santos, Anny Graycy Vasconcelos de Oliveira Lima, Thiago Vinícus Costa Nascimento, Francisca Claudia da Silva de Sousa, Fleming Sena Campos, Francisco Naysson de Sousa Santos, Hactus Souto Cavalcanti, Dilier Olivera‐Viciedo, Anderson de Moura Zanine   +15 more
wiley   +1 more source

A Comparative Study of Freewheeling Methods for eGaN HEMTs in a Phase-leg Configuration

, 2021
Enhancement Gallium nitride high-electron mobility transistors (eGaN HEMTs) have been developed with lower conduction losses and higher switching speed compared to MOSFETs.
Xun, Qian, Zhang, Ying,, Peng, Zihe, Xun, Qian,, Zhang, Ying, Qin, Haihong,, Fu, Dafeng,, Peng, Zihe,, Qin, Haihong, Fu, Dafeng   +9 more
core   +1 more source

An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs

IEEE Journal of the Electron Devices Society
High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be designed and optimized by accurately considering the coupling of
Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja   +5 more
doaj   +1 more source

Nitride HEMTs vs arsenides: The ultimate battle?

Modern Electronic Materials, 2016
In this paper, we have studied the limit capabilities of nitride and arsenide HEMTs and shown that the frequency limit of these devices has already been reached.
Yuri V. Fedorov, Sergey V. Mikhaylovich
doaj   +1 more source