Results 81 to 90 of about 17,841 (221)

Influence of Displacement Damage Effect on AlGaN/GaN HEMT Devices

Yuanzineng kexue jishu, 2023
AlGaN/GaN high electron mobility transistors (HEMTs) have excellent physical and chemical stability, which gives it great potential for use in consumer, industrial and space applications.
CHEN Baiwei1,2;SUN Changhao1,2;MA Teng2;SONG Hongjia1;WANG Jinbin1;PENG Chao2;ZHANG Zhangang2;LEI Zhifeng2;LIANG Chaohui2,*;ZHONG Xiangli1,*
doaj   +1 more source

Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs

IEEE Journal of the Electron Devices Society, 2020
In this work, a comprehensive, TCAD based design approach for mmWave (mmW) GaN HEMTs is presented. Unique trade-offs between epi-layer design and HEMT's mmW performance are discussed. Effect of surface states on cut off frequency is modeled and presented.
Ankit Soni, Mayank Shrivastava
doaj   +1 more source

Self-aligned 0.12mm T-gate In.53Ga.47As/In.52Al.48As HEMT Technology Utilising a Non Annealed Ohmic Contact Strategy [PDF]

, 2003
An InGaAs/InAlAs based HEMT structure, lattice matched to an InP substrate, is presented in which drive current and transconductance has been optimized through a double-delta doping strategy.
Asenov, A., Boyd, E., Kalna, K., McEwan, F., McLelland, H., Moran, D. A. J., Stanley, C. R., Thayne, I., Zhuang, L. L.   +8 more
core   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

IEEE Journal of the Electron Devices Society, 2017
An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under ...
Shih-Chien Liu, Chung-Kai Huang, Chia-Hua Chang, Yueh-Chin Lin, Bo-Yuan Chen, Szu-Ping Tsai, Burhanuddin Yeop Majlis, Chang-Fu Dee, Edward Yi Chang   +8 more
doaj   +1 more source

GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation [PDF]

, 2017
Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS ...
Kazuhiko Honjo, Ryo Ishikawa, Tsukasa Yasui   +2 more
core   +2 more sources

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source

Graphene: Status and Prospects [PDF]

, 2009
Graphene is a wonder material with many superlatives to its name. It is the thinnest material in the universe and the strongest ever measured. Its charge carriers exhibit giant intrinsic mobility, have the smallest effective mass (it is zero) and can ...
A. K. Geim, Balandin, Booth, Bunch, Bunch, Dikin, Elias, Emtsev, Geim, Han, Hernandez, Kim, Kim, Lee, Li, Lin, Meyer, Orlita, Ponomarenko, Reina, Robinson, Schedin, Shytov, Stander, Standley, Wang, Zhou   +26 more
core   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Single‐Crystal AlN Substrates In their Research Article (10.1002/aelm.202500393), Eungkyun Kim, Debdeep Jena, Huili Grace Xing, and co‐workers demonstrate single‐crystal high electron mobility transistors (XHEMTs) on bulk AlN substrates for the first time, delivering exceptional RF performance.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Extracellular Particles Derived From Mesenchymal Stromal Cells Reduce Pseudomonas aeruginosa Lung Infection and Inflammation in Mice

Journal of Extracellular Biology, Volume 5, Issue 2, February 2026.
ABSTRACT The World Health Organization and the U.S. Centre for Disease Control and Prevention have reported that antibiotic‐resistant infections with Pseudomonas aeruginosa present a significant health risk worldwide. In the genetic disease Cystic Fibrosis (CF), chronic antibiotic‐resistant Pseudomonas lung infections and persistent inflammation remain
Sharanya Sarkar, Roxanna Barnaby, Zachary Faber, Lily Taub, Carolyn Roche, Lily A. Charpentier, Thomas H. Hampton, Brad Vietje, Douglas J. Taatjes, Byoung‐Kyu Cho, Young Ah Goo, Matthew J. Wargo, Daniel J. Weiss, Tracey L. Bonfield, Thomas J. Kelley, Bruce A. Stanton   +15 more
wiley   +1 more source