Results 101 to 110 of about 17,841 (221)

Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors

, 2016
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance ...
Du, Yuchen, Hwang, James C. M., Luo, Xi, Xiong, Kuanchen, Ye, PeiDe   +4 more
core   +1 more source

Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects

, 2012
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects.
Ahmed, Imtiaz, Alam, Md. Hasibul, Azim, Zubair Al, Chowdhury, Nadim, Khosru, Quazi Deen Mohd, Niaz, Iftikhar Ahmad   +5 more
core   +1 more source

Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

IEEE Journal of the Electron Devices Society
The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing.
Junjie Li, Johan Bergsten, Arsalan Pourkabirian, Jan Grahn   +3 more
doaj   +1 more source

Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field

, 2009
We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the gate voltage and magnetic field.
Boubanga-Tombet, S., Coquillat, D., Dyakonov, M. I., Grynberg, M., Karpierz, K., Knap, W., Lusakowski, J., Sakowicz, M., Teppe, F.   +8 more
core   +3 more sources

Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor

Applied Physics Express
We investigated the impact of In within barriers on the gate leakage current in InAlGaN/GaN high-electron-mobility transistors (HEMTs). The results revealed that the gate leakage current in the (In)AlGaN barriers depends solely on the two-dimensional ...
Atsushi Yamada, Toshihiro Ohki
doaj   +1 more source

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

IET Power Electronics
The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration.
Peng Xue, Eckart Hoene, Pooya Davari
doaj   +1 more source

Evaluation of commercial GaN HEMTs for pulsed power applications [PDF]

, 2009
Beach, MA, Fornetti, F, Morris, KA
core   +2 more sources

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]

Materials (Basel)
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc   +1 more source

Pulsed operation and performance of commercial GaN HEMTs [PDF]

, 2009
Beach, MA, Fornetti, F, Morris, KA
core  

Electrical Properties and Performance Enhancement of AlGaN/GaN/Si HEMTs. [PDF]

Micromachines (Basel)
Mosbahi H, Ali MKM, Gassoumi M.
europepmc   +1 more source