Results 101 to 110 of about 9,883 (230)

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

, 2007
A multienergy oxygen ion implantation process wasdemonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free
Makimoto, Toshiki, chang, Chia-Ta, Zirath, Herbert,, Lu, Chung-Yu, Shiu, Jin-Yu,, Kumakura, Kazuhide, Huang, Jui-Chien, Desmaris, Vincent,, Rorsman, Niklas,, Chang, Edward-Yi   +9 more
core   +1 more source

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

, 2005
The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with ...
Li Jianping, Hu Guoxin, Li Jinmin, Wang Xiaoliang, Qian He, Liu Xinyu, Zeng Yiping, Wang Junxi, Wang Cuimei, Ma Zhiyong, Ran Junxue, Zheng Yingkui   +11 more
core  

Nitride HEMTs vs arsenides: The ultimate battle?

, 2016
In this paper, we have studied the limit capabilities of nitride and arsenide HEMTs and shown that the frequency limit of these devices has already been reached.
Yuri V. Fedorov, Sergey V. Mikhaylovich
core   +1 more source

High-speed and low-noise AlInN/GaN HEMTs on SiC

A comparison of devices with different source-drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut-off frequency is effectively improved through shrinking source drain space and reducing gate ...
Benedickter, Hansruedi, Grandjean, Nicolas, Feltin, Eric, Bolognesi, C. R., Sun, Haifeng, Gonschorek, Marcus, Alt, Andreas R., Carlin, Jean-Francois   +7 more
core   +1 more source

Characterization of GaNbased HEMTs for power electronics

, 2020
Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices.
Liang, Xiaomin
core  

A Performance Comparison Between beta-Ga2O3 and GaN HEMTs

, 2019
We report on the quantitative estimates of various metrics of performance for beta-Ga2O3-based high electron mobility transistors (HEMTs) for RF and power applications and compare them with III-nitride devices. Device parameters such as electron velocity
Pratiyush, Anamika Singh, Muralidharan, Rangarajan, Soman, Rohith, Nath, Digbijoy N, Kumar, Sandeep   +4 more
core   +1 more source

Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor

Applied Physics Express
We investigated the impact of In within barriers on the gate leakage current in InAlGaN/GaN high-electron-mobility transistors (HEMTs). The results revealed that the gate leakage current in the (In)AlGaN barriers depends solely on the two-dimensional ...
Atsushi Yamada, Toshihiro Ohki
doaj   +1 more source

Degradation mechanisms of GaN HEMTs

, 2007
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.Includes bibliographical references (p.
Joh, Jungwoo
core  

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

, 2010
AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript bk]) of AlGaN/GaN HEMTs grown on ...
Piner, Edwin L., Tomas Palacios, Palacios, Tomas, Lu, Bin, Edwin L. Piner, Bin Lu   +5 more
core   +1 more source

Stabilization network optimization of internally matched GaN HEMTs

, 2011
PurposeThe purpose of this paper is to report on the stabilization network optimization of internally matched GaN high electron mobility transistors (HEMTs).Design/methodology/approachThe effects of the two stabilization networks on the characteristics ...
W.J. Luo, Y.K. Zheng, C.Y. Yang, K. Wei, X.Y. Liu, X.J. Chen   +5 more
core   +1 more source