Results 101 to 110 of about 15,181 (229)

GaN HEMT Oscillators with Buffers

Micromachines
With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage.
Sheng-Lyang Jang, Ching-Yen Huang, Tzu Chin Yang, Chien-Tang Lu   +3 more
openaire   +2 more sources

Low density drain HEMTs

, 2011
Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field ...
Lau, Kei May, Chen, Kevin J.
core  

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

, 2012
We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 μm to 1 μm, the HEMTs showed up to 56% higher ...
Hallen, A.,, Moschetti, G., Grahn, J., L. Desplanque, Wallart, X., Grahn, Jan, Nilsson, P. -A, G. Moschetti, Nilsson, Per-Åke,, J. Grahn, Wallart, X.,, Moschetti, Giuseppe, P.-A. Nilsson, Nilsson, P., Desplanque, L., A. Hallen, Hallen, A., X. Wallart, Desplanque, L.,, Grahn, Jan,, Hallén, Anders,, Moschetti, Giuseppe,, Nilsson, Per-\uc5ke, Nilsson, Per-Åke   +23 more
core   +1 more source

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

IET Power Electronics
The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration.
Peng Xue, Eckart Hoene, Pooya Davari
doaj   +1 more source

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances, 2016
In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse ...
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Xiaoyan Hu, Kai Cheng, Hong-yu Yu   +7 more
doaj   +1 more source

Influence of passivation-induced stress on the performance of AlGaN/GaN HEMTs

, 2005
peer reviewedThis paper reports on properties of intentionally undoped AlGaN/GaN/sapphire-based high electron mobility transistors (HEMTs) before and after passivation with SiO2 and Si3N4.
Bernát, J., Drzik, M., Marso, M., Kordoš, P., Gregusova, Dagmar, Uherek, F., Novak, J., MARSO, Michel, Gregusova, D., M. Držík, J. Bernát, M. Marso, P. Kordoš, D. Gregušová, J. Novák, F. Uherek   +15 more
core   +1 more source

Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm

APL Materials
This study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth.
Kohei Ueno, Ryota Maeda, Takao Kozaka, Hiroshi Fujioka   +3 more
doaj   +1 more source

Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

IEEE Journal of the Electron Devices Society
The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing.
Junjie Li, Johan Bergsten, Arsalan Pourkabirian, Jan Grahn   +3 more
doaj   +1 more source

Characterization of AlGaN/GaN HEMTs with Different Manufacturing Characteristics

This work presents the characterization of high mobility transistors (AlGaN/GaN HEMTs) produced with different techniques in the manufacturing process. The study performs a comparative analysis of the respective HEMTs.
Junior, N. Graziano [UNESP], Panzo, E. C. [UNESP], Candido, J. [UNESP], Andrade, M. G.C. [UNESP], Simoen, E.   +4 more
core   +1 more source

Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
Industries including energy production, automotive and aerospace has seen a tremendous increase in interest in high temperature electronics. There has been a lot of investigations done on wide bandgap materials because of the difficulties traditional ...
J. Ajayan, Vakkalakula Bharath Sreenivasulu, N. Aruna Kumari, S. Sreejith, Subhajit Das   +4 more
doaj   +1 more source