Results 101 to 110 of about 1,513 (185)

Self-Calibrating TSEP for Junction Temperature and RUL Prediction in GaN HEMTs. [PDF]

Nanomaterials (Basel)
Cui Y, Gan Y, Wen K, Jiang Y, Chen C, Wang Q, Yu H.   +6 more
europepmc   +1 more source

The development of HEMTs

Oyo Buturi, 1998
openaire   +1 more source

Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion. [PDF]

Micromachines (Basel)
Zhai L, Li X, Ji J, Yu L, Chen L, Chen Y, Xia H, Han Z, Wang J, Jiang X, Yuan S, Zhang T, Hao Y, Zhang J.   +13 more
europepmc   +1 more source

Influence of Electrical Transients and A/D Converter Dynamics on Thermal Resistance Measurements of Power MOSFETs. [PDF]

Sensors (Basel)
Górecki K, Posobkiewicz K.
europepmc   +1 more source

Editorial for the Special Issue on GaN-Based Materials and Devices: Research and Applications. [PDF]

Micromachines (Basel)
Liu W, Wang K.
europepmc   +1 more source

Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]

Materials (Basel)
Weis M.
europepmc   +1 more source

HEMT history

Oyo Buturi, 1991
openaire   +1 more source

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc   +1 more source

On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs. [PDF]

Micromachines (Basel)
Giorgino G, Miccoli C, Cioni M, Reina S, Wakrim T, Guillon V, Sama NY, Gaillard P, Zeghouane M, Chauveau HJ, Castagna ME, Constant A, Iucolano F, Chini A.   +13 more
europepmc   +1 more source

6-18 GHz High-Efficiency Power Amplifier MMIC Based on Broadband Impedance Matching. [PDF]

Micromachines (Basel)
Liu S, Ma X, Zhang Y, Bian Z, Xu C.
europepmc   +1 more source