Results 111 to 120 of about 17,841 (221)

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

open access: yesACS Appl Electron Mater
Kim DW   +10 more
europepmc   +1 more source

The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]

open access: yesMicromachines (Basel)
Shen Z   +10 more
europepmc   +1 more source

The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]

open access: yesMicromachines (Basel)
Shi Y   +5 more
europepmc   +1 more source

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