Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]
Wu TL +5 more
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Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]
Kim DW +10 more
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Dietary recommendations for people with cystic fibrosis, a relevantly changing field. [PDF]
Mainz JG, Zagoya C.
europepmc +1 more source
Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]
Lee KH, Yang Y, Heo J, Kim JH.
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An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]
Miao Y, Yuan Q, Wang C, Cheng J.
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The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]
Shen Z +10 more
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Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]
Won YH +6 more
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Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]
Qureshi B, Alharbi AG, Ayub R, Loan SA.
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Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses. [PDF]
Xing D, Liu H, Su M, Liu X, Liu C.
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The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]
Shi Y +5 more
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