Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]
Lu H +8 more
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Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers. [PDF]
Wang P +9 more
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Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]
Li Y, Huang Y, Li J, Sun H, Guo Z.
europepmc +1 more source
Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]
Sengupta R, Sarusi G.
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Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors. [PDF]
Wang H +9 more
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Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries. [PDF]
Xing R +12 more
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Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer. [PDF]
Sun S, Liu L, Qu G, Xie X, Ajayan J.
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The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications. [PDF]
Yu Q +13 more
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Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications. [PDF]
Alim MA, Gaquiere C.
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Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]
Kshatri SS +4 more
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