Results 111 to 120 of about 15,181 (229)

Suppression of Short-Channel Effects in Dual-gate (DG) AlGaN/GaN High Electron Mobility Transistors (HEMTs)

AlGaN/GaN high-electron-mobility transistors (HEMTs) are promising for high-frequency and high-power applications; however, aggressive scaling introduces short-channel effects (SCEs) that degrade electrostatic control of the two-dimensional electron gas (
Debaleen Biswas, Sanghoon Park, Akio Wakejima, Hidemasa Takahashi, Yuji Ando   +4 more
core   +1 more source

Research progress on irradiation effect of InP-based high electron mobility transistors

He jishu
Indium phosphide (InP)-based high electron mobility transistors (HEMTs) have been widely adopted in space communication systems such as satellites, manned spaceflight, and deep space exploration due to their high frequency and gain, and low noise ...
FANG Renfeng, ZHOU Shuxing, CAO Wenyu, WEI Yanfeng, WANG Jingyang, LI Shusen, YAN Jiasheng, LIANG Guijie   +7 more
doaj   +1 more source

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

, 2008
Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V.
Kohn, E., Gonschorek, M., Carlin, J. F., Grandjean, N., Gaquiere, C., Medjdoub, F., Feltin, E., Alomari, M., Py, M. A., Py, M.A., Carlin, J.F., Medjdoub, F, Gaquière, Christophe, J.-F. Carlin, E. Feltin, M. Alomari, F. Medjdoub, E. Kohn, M.A. Py, M. Gonschorek, C. Gaquière, N. Grandjean   +21 more
core   +1 more source

Optimized Machine Learning-Augmented Hybrid Empirical Models for AlGaN/GaN HEMTs: A Comprehensive Analysis

IEEE Access
Precise modeling of gallium nitride (GaN) high-electron mobility transistors (HEMTs) is vital for ensuring reliable and scalable RF circuit design, and efficient characterization of the device behavior.
Ahmad Khusro, Saddam Husain, Mohammad Hashmi   +2 more
doaj   +1 more source

Anomalous output conductance in N-polar GaN-based MIS-HEMTs

, 2011
We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface.
Speck, James S., Man Hoi Wong, Mishra, Umesh K., Uttam Singisetti, Umesh K. Mishra, Jing Lu, Singisetti, Uttam, Lu, Jing, James S. Speck, Wong, Man Hoi   +9 more
core   +1 more source

Numerical simulation of InN based HEMTs [PDF]

, 2015
Invented in 1980, High Electron Mobility Transistors(HEMTs) are now widely used in high-frequency electronics. They are fabricated in different material systems and a possible new material for future devices is indium nitride (InN).
VANDEMAELE, MICHIEL
core  

High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 v

In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition.
Cui, P, Zhang, T, Wang, L, Han, J, Chen, S, Luo, X, Dai, J, Qi, K, Xu, X, Linewih, H, Lin, Z   +10 more
core   +1 more source

Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

, 2011
InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD).
Zeng, Lunjie,, Zirath, Herbert,, Halonen, John,, Nilsson, Bengt,, Grahn, Jan,, P., Ramvall, Schleeh, Joel,, Nilsson, Per-Åke,, Wadefalk, Niklas,, Olsson, Eva,   +9 more
core  

Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al₂O₃ Interlayer. [PDF]

Nanomaterials (Basel)
Qiao G, Liu H, Feng C, Liao Y, Gong R, Guo H, Shao P, Chen D.   +7 more
europepmc   +1 more source

Enhanced Breakdown Voltage in GaN HEMTs Using Step-Graded AlGaN Buffer Layers. [PDF]

Micromachines (Basel)
Bai J, Liu X, Tao H, Su H, Zhang J, Hao Y.   +5 more
europepmc   +1 more source