Results 111 to 120 of about 9,883 (230)

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

, 2012
We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 μm to 1 μm, the HEMTs showed up to 56% higher ...
Hallen, A.,, Moschetti, G., Grahn, J., L. Desplanque, Wallart, X., Grahn, Jan, Nilsson, P. -A, G. Moschetti, Nilsson, Per-Åke,, J. Grahn, Wallart, X.,, Moschetti, Giuseppe, P.-A. Nilsson, Nilsson, P., Desplanque, L., A. Hallen, Hallen, A., X. Wallart, Desplanque, L.,, Grahn, Jan,, Hallén, Anders,, Moschetti, Giuseppe,, Nilsson, Per-\uc5ke, Nilsson, Per-Åke   +23 more
core   +1 more source

OFF-state drain reliability of enhanced mode AlGaN/GaN power HEMTs: TDDB and avalanche processes

reservedThe aim of this thesis work consists in the identification and modeling of the physical mechanisms that limit the stability and the performance of enhanced-mode AlGaN/GaN High Electron Mobility Transistors in OFF-state bias conditions. Initially,
DELL'ANDREA, MATTEO
core  

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

IET Power Electronics
The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration.
Peng Xue, Eckart Hoene, Pooya Davari
doaj   +1 more source

AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band

, 2007
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10×120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power.
Yao Xiaojiang, Li Bin, Liu Guoguo, Luo Weijun, Liu Xinyu, Chen Yanhu, Wei Ke, WANG Xiaoliang, Li Chengzhan, Chen Xiaojuan, Liu Dan   +10 more
core  

Low-noise and low-power cryogenic HEMTs

, 2013
Les transistors ayant un faible niveau de bruit à basse fréquence, une faible puissance de dissipation et fonctionnant à basse température (≤ 4.2 K) sont actuellement inexistants alors qu’ils sont très demandés pour la réalisation de préamplificateurs à ...
Dong, Quan
core  

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]

Materials (Basel)
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc   +1 more source

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]

Micromachines (Basel)
Pan J, Ye X, Jiang R, Miao A, Miao F, Mao Z, Peng Y, Guo H, Lei J.   +8 more
europepmc   +1 more source

Electrical Properties and Performance Enhancement of AlGaN/GaN/Si HEMTs. [PDF]

Micromachines (Basel)
Mosbahi H, Ali MKM, Gassoumi M.
europepmc   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source