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Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation. [PDF]
ACS OmegaChen HC +6 more
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The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. [PDF]
Micromachines (Basel)Chang PH +4 more
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ASM-HEMT: Compact model for GaN HEMTs
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely ...
Avirup Dasgupta +3 more
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Microelectronics Reliability, 2009
This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
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This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
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Comparison of electrical characteristics of metamorphic HEMTs with InP HEMTs and PHEMTs
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (MHEMTs) were fabricated on GaAs substrates. A step-graded InAlAs buffer layer was used to relax the lattice mismatch between the active layers and the substrates. The electrical characteristics of the MHEMTs were compared with those of HEMTs on InP substrates (InP HEMTs) and ...
Kenji Kawada +6 more
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IEEE Transactions on Electron Devices, 2022
Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the core Ecole Polytechnique Federale de Lausanne (EPFL) HEMT model, the temperature dependence of ...
Nika Sahebghalam +3 more
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Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the core Ecole Polytechnique Federale de Lausanne (EPFL) HEMT model, the temperature dependence of ...
Nika Sahebghalam +3 more
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High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers
IEEE Transactions on Microwave Theory and Techniques, 2002The design, fabrication, and performance of monolithically integrated MSM-HEMT and PIN-HEMT photoreceivers are described. PIN-HEMT photoreceivers with 701 /spl Omega/ of transimpedance over an 8.3 GHz bandwidth have been fabricated, and the sensitivity was measured and found to be -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 2/sup 31/-1 pattern ...
P. Fay, C. Caneau, I. Adesida
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Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
physica status solidi (a), 2010AbstractAlGaN/GaN heterostructure devices are capable of delivering high‐frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies.
Chen, Kevin J., Zhou, Chunhua
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Microelectronics Journal, 2003
The high electron mobility in heterostructure devices stems from fact that electrons are injected into intrinsic layer of a semiconductor material and are confined into two-dimensional space of a heterostructure potential. However, non-linear distribution of the voltage along a transistor channel results in variation of depth and width of ...
Samson Mil'shtein +3 more
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The high electron mobility in heterostructure devices stems from fact that electrons are injected into intrinsic layer of a semiconductor material and are confined into two-dimensional space of a heterostructure potential. However, non-linear distribution of the voltage along a transistor channel results in variation of depth and width of ...
Samson Mil'shtein +3 more
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Breakdown walkout in pseudomorphic HEMT's
IEEE Transactions on Electron Devices, 1996In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudomorphic AlGaAs-InGaAs-GaAs HEMTs (PHEMTs). Experiments performed on passivated commercial PHEMTs show that hot electron stress cycles induce a large and permanent increase of the gate-drain breakdown voltage.
MENOZZI, Roberto +3 more
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