Results 121 to 130 of about 15,181 (229)

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

, 2005
The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with ...
Li Jianping, Hu Guoxin, Li Jinmin, Wang Xiaoliang, Qian He, Liu Xinyu, Zeng Yiping, Wang Junxi, Wang Cuimei, Ma Zhiyong, Ran Junxue, Zheng Yingkui   +11 more
core  

Device Design Implications on <i>R</i>_ON×<i>Q</i>_OSS FOM in p-GaN Power HEMTs: A Simulation Study. [PDF]

Micromachines (Basel)
Zagni N, Verzellesi G, Chini A.
europepmc   +1 more source

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]

Materials (Basel)
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc   +1 more source

Modeling and Sensitivity Analysis of GaN HEMT Biosensor. [PDF]

Biosensors (Basel)
Yesayan A, Sallese JM.
europepmc   +1 more source

Impact of Printed Circuit Board Dielectric Material on the Thermal Behavior of Wafer-Level Packaging GaN Transistors Used in High-Power-Density Converters for Electric Vehicle Applications. [PDF]

Micromachines (Basel)
Belguith M, Eloued S, Kadi M, Ben Hadj Slama J, Hamouda M.   +4 more
europepmc   +1 more source

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]

Micromachines (Basel)
Pan J, Ye X, Jiang R, Miao A, Miao F, Mao Z, Peng Y, Guo H, Lei J.   +8 more
europepmc   +1 more source

Electrical Properties and Performance Enhancement of AlGaN/GaN/Si HEMTs. [PDF]

Micromachines (Basel)
Mosbahi H, Ali MKM, Gassoumi M.
europepmc   +1 more source

High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN_x Layer Etching Technique. [PDF]

Micromachines (Basel)
Cao X, Wang P, Mi M, Liu X, Xiao D, Du X, Lu M, Chen F, Huang Z, Yao J, Liang Y, Cui K, Ma X, Hao Y.   +13 more
europepmc   +1 more source