Results 121 to 130 of about 9,883 (230)

Development of InAlN HEMTs for space application

, 2016
This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and device performance of InAlN HEMTs were compared to AlGaN HEMTs, also ...
Smith, Matthew D.
core  

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]

Sci Rep
Wu TL, Ho HJ, Liu CW, Singh SK, Chen YC, Chen HW.   +5 more
europepmc   +1 more source

Numerical simulation of InN based HEMTs

, 2015
Invented in 1980, High Electron Mobility Transistors(HEMTs) are now widely used in high-frequency electronics. They are fabricated in different material systems and a possible new material for future devices is indium nitride (InN).
VANDEMAELE, MICHIEL
core  

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices

, 2001
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the delta -doped AlGaAs layer to the InGaAs channel must be high.
Cao X, Zeng YP, Kong MY, Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China., Pan L, Zhu ZP, Wang BQ   +6 more
core  

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

Dietary recommendations for people with cystic fibrosis, a relevantly changing field. [PDF]

J Pediatr (Rio J)
Mainz JG, Zagoya C.
europepmc   +1 more source

GaN HEMTs device modeling and simulation

GaN HEMTs have garnered significant attention from power device and circuit design engineers due to their exceptional performance in high-temperature, high-speed, highfrequency, and high-power applications.
Zhang, Huimin
core  

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]

Micromachines (Basel)
Miao Y, Yuan Q, Wang C, Cheng J.
europepmc   +1 more source