Results 141 to 150 of about 15,181 (229)

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

An Adaptive Gate-Side Feedback Active Gate Driver for GaN Devices with Optimized Switching Performance. [PDF]

Micromachines (Basel)
Zhang Y, Huang B, Wu T, Wang Z, Zhang Q, Zhang D, Lei J, Min R, Tong Q.   +8 more
europepmc   +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]

Micromachines (Basel)
Miao Y, Yuan Q, Wang C, Cheng J.
europepmc   +1 more source

Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses. [PDF]

Micromachines (Basel)
Xing D, Liu H, Su M, Liu X, Liu C.
europepmc   +1 more source

The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]

Micromachines (Basel)
Shen Z, Shi Y, Wu L, He L, Chen X, Chen Y, Zhao D, He J, Zhu G, Zeng H, Lu G.   +10 more
europepmc   +1 more source

Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]

Micromachines (Basel)
Won YH, Kim TS, Lee JH, Lim CY, Min BG, Kang DM, Kim HS.   +6 more
europepmc   +1 more source

The development of HEMTs

Oyo Buturi, 1998
openaire   +1 more source

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]

ACS Omega
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc   +1 more source

Localized Electric Field Tailoring to Balance Voltage Reliability, Current Density, and High-Frequency Performance of AlGaN/GaN HEMTs. [PDF]

Micromachines (Basel)
Wang Y, Wang J, Dong Z, Tian P, Liu Y, Zhai J, Hu W.   +6 more
europepmc   +1 more source