Results 141 to 150 of about 1,513 (185)

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

2022
openaire   +1 more source

Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

Materials Science in Semiconductor Processing, 2022
Ajayan J, Sandip Bhattacharya, A S Augustine Fletcher   +2 more
exaly  

METHOD FOR MANUFACTURING A GATE TERMINAL OF A HEMT DEVICE, AND HEMT DEVICE

2021
IUCOLANO FERDINANDO, TRINGALI CRISTINA
openaire   +2 more sources

GaAlN/GaN HEMT heterostructures grown on ‘SiCopSiC' composite substrates for HEMT application

2008
In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC.
Di Forte-Poisson, M.A., Sarazin, N., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Guziewicz, M., Thoth, L., Pecz, B., Thorpe, J., Morvan, E., Gaquière, Christophe, Meneghesso, G.   +12 more
openaire   +2 more sources

Current-gain cutoff frequency comparison of InGaAs HEMTs

IEEE Electron Device Letters, 1988
S Sasa, K Hikosaka
exaly  

The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter

Solid-State Electronics, 2000
Alain Cappy, Henri Happy, Yvon Cordier   +2 more
exaly  

HEMT Devices

1993
Masayuki Abe, Takashi Mimura
openaire   +1 more source

Harmonic analysis Of GaN- HEMT

2015
note
openaire   +2 more sources

205-GHz (Al,In)N/GaN HEMTs

IEEE Electron Device Letters, 2010
Raphaël Butte, Nicolas Grandjean, Haifeng Sun   +2 more
exaly  

50 nm metamorphic GaAs and InP HEMTs

Thin Solid Films, 2007
Stephen Thoms, Iain Thayne, Khaled Elgaid   +2 more
exaly