Results 141 to 150 of about 17,841 (221)

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source

Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors. [PDF]

Nanomaterials (Basel)
Wang H, Liu Y, Dong X, Ullah A, Sun J, Zhang C, Xiong Y, Gu P, Chen G, Liu X.   +9 more
europepmc   +1 more source

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries. [PDF]

Front Optoelectron
Xing R, Guo H, Guo B, Yu G, Zhang P, Zhou J, Yang A, Li Y, Hao C, Yue H, Zeng Z, Zhang X, Zhang B.   +12 more
europepmc   +1 more source

The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications. [PDF]

Micromachines (Basel)
Yu Q, Wu S, Zhang M, Yang L, Zou X, Lu H, Shi C, Gao W, Wu M, Hou B, Qiu G, He X, Ma X, Hao Y.   +13 more
europepmc   +1 more source

Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications. [PDF]

Micromachines (Basel)
Alim MA, Gaquiere C.
europepmc   +1 more source

EDS COMPOUND SEMICONDUCTOR DEVICESAND CIRCUITS TECHNICAL COMMITTEE [PDF]

, 2010
Ghione, Giovanni
core  

The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel)
Chang PH, Huang CR, Liu CH, Lee KW, Chiu HC.   +4 more
europepmc   +1 more source

HEMT materials and devices

III-Vs Review, 2003
openaire   +1 more source

Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD. [PDF]

Nanomaterials (Basel)
Yang Y, Liu Y, Li Y, Nafisa MT, Feng ZC, Wang L, Yiin J, Wan L, Klein B, Ferguson I, Sun W.   +10 more
europepmc   +1 more source

GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit. [PDF]

Sci Rep
Faizan M, Qian Z, Zhu H, Fan S, Yousaf MZ, Bajaj M, Zhichu C, Aziz A.   +7 more
europepmc   +1 more source