Results 151 to 160 of about 15,181 (229)

Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications. [PDF]

Small Methods
Zhang J, Dai Y, Zhou L, Lu Q, Dang K, Zhang Y, Zhang J, Hao Y.   +7 more
europepmc   +1 more source

The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]

Micromachines (Basel)
Shi Y, Chen Y, He L, Chen X, Chen Y, Lu G.   +5 more
europepmc   +1 more source

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Considerations for early life genetic therapies in cystic fibrosis. [PDF]

Am J Physiol Lung Cell Mol Physiol
Cooney AL, Thornell IM, Pezzulo AA, Fischer AJ, Cook DP, Abou Alaiwa MH, Larson Ode KM, Uc A, Zabner J, Ryan AL, Stoltz DA, Sinn PL, McCray PB, Meyerholz DK.   +13 more
europepmc   +1 more source

Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N.
europepmc   +1 more source

HEMT history

Oyo Buturi, 1991
openaire   +1 more source

Influence of LPCVD-Si₃N₄ Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel)
Jiang G, Li W, Luo X, Liu Y, Fu C, Zhang Q, Zhang G, Lin Z, Cui P.   +8 more
europepmc   +1 more source

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]

Micromachines (Basel)
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.   +6 more
europepmc   +1 more source

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]

Nat Commun
Zhou H, Zhang C, Zhang K, Huang Z, Liu F, Zhou M, Gong H, Tang S, Liu W, Wang B, Dong Y, Liu J, Zhou S, Xu Z, Wang S, Liu Z, Xu S, Zhang C, Wang X, Wang H, Zhang Y, Cheng Z, Chen T, Zhang Y, Hao Y, Zhang J.   +25 more
europepmc   +1 more source

High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]

Micromachines (Basel)
Du J, Lu H, Hou B, Yang L, Zhang M, Wu M, Chen K, Pan T, Chen Y, Liu H, Chang Q, Ma X, Hao Y.   +12 more
europepmc   +1 more source