Results 151 to 160 of about 17,841 (221)

High-Precision Small-Signal Model for Double-Channel-High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect. [PDF]

Micromachines (Basel)
Zhao Z, Yu Q, Lu Y, Yi C, Liu X, Feng T, Zhao W, Chen Y, Yang L, Ma X, Hao Y.   +10 more
europepmc   +1 more source

Impact of Channel Effects on Radiation-Hardened InAlGaN HEMTs for Low-Earth-Orbit Applications. [PDF]

ACS Omega
Lee SK, Weng YC, Huang CY, Chang EY, Tseng YC.   +4 more
europepmc   +1 more source

Oki sampling GaN HEMT

III-Vs Review, 2005
openaire   +1 more source

Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure. [PDF]

Micromachines (Basel)
Hao L, Liu Z, Du H, Zhao S, Wang H, Zhang J, Hao Y.   +6 more
europepmc   +1 more source

Damage effects in GaN high electron mobility transistor power amplifier induced by high power microwave pulses. [PDF]

Sci Rep
Zhao J, Zhao G, Chen Q, Chen Z, Cao L, Feng X, Liu Z, Chen C.   +7 more
europepmc   +1 more source

Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices. [PDF]

Micromachines (Basel)
Liu L, Zhen Y, Li S, Pang B, Zeng K.
europepmc   +1 more source

The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters. [PDF]

Nanomaterials (Basel)
Yu J, Ding J, Wang T, Huang Y, Du W, Liang J, Ma H, Zhang Q, Li L, Huang W, Zhang W.   +10 more
europepmc   +1 more source

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ASM-HEMT: Compact model for GaN HEMTs

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015
In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely ...
Avirup Dasgupta, Sudip Ghosh, Yogesh Singh Chauhan, Sourabh Khandelwal   +3 more
openaire   +1 more source

High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers

IEEE Transactions on Microwave Theory and Techniques, 2002
The design, fabrication, and performance of monolithically integrated MSM-HEMT and PIN-HEMT photoreceivers are described. PIN-HEMT photoreceivers with 701 /spl Omega/ of transimpedance over an 8.3 GHz bandwidth have been fabricated, and the sensitivity was measured and found to be -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 2/sup 31/-1 pattern ...
P. Fay, C. Caneau, I. Adesida
openaire   +2 more sources