Results 171 to 180 of about 1,513 (185)
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Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs
Chemistry - A European JournalAli Zavabeti, Linling Xu
exaly
Lateral HEMT and method for the production of a lateral HEMT
2011ZUNDEL MARKUS +2 more
openaire +1 more source
Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs
IEEE Transactions on Electron DevicesZiyue Zhao, Meng Zhang, Xiaohua Ma
exaly
MANUFACTURING PROCESS OF AN OHMIC CONTACT OF A HEMT DEVICE AND HEMT DEVICE
2023IUCOLANO FERDINANDO +4 more
openaire +1 more source
Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs
MicromachinesHong Wang, Liu Xiaoyi
exaly
Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs
MicromachinesZixin Zhen +2 more
exaly