Results 171 to 180 of about 15,181 (229)
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Microelectronics Reliability, 2009
This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
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This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
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Comparison of electrical characteristics of metamorphic HEMTs with InP HEMTs and PHEMTs
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (MHEMTs) were fabricated on GaAs substrates. A step-graded InAlAs buffer layer was used to relax the lattice mismatch between the active layers and the substrates. The electrical characteristics of the MHEMTs were compared with those of HEMTs on InP substrates (InP HEMTs) and ...
Kenji Kawada +6 more
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High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers
IEEE Transactions on Microwave Theory and Techniques, 2002The design, fabrication, and performance of monolithically integrated MSM-HEMT and PIN-HEMT photoreceivers are described. PIN-HEMT photoreceivers with 701 /spl Omega/ of transimpedance over an 8.3 GHz bandwidth have been fabricated, and the sensitivity was measured and found to be -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 2/sup 31/-1 pattern ...
P. Fay, C. Caneau, I. Adesida
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Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
physica status solidi (a), 2010Abstract AlGaN/GaN heterostructure devices are capable of delivering high‐frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies.
Chen, Kevin J., Zhou, Chunhua
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Microelectronics Journal, 2003
The high electron mobility in heterostructure devices stems from fact that electrons are injected into intrinsic layer of a semiconductor material and are confined into two-dimensional space of a heterostructure potential. However, non-linear distribution of the voltage along a transistor channel results in variation of depth and width of ...
Samson Mil'shtein +3 more
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The high electron mobility in heterostructure devices stems from fact that electrons are injected into intrinsic layer of a semiconductor material and are confined into two-dimensional space of a heterostructure potential. However, non-linear distribution of the voltage along a transistor channel results in variation of depth and width of ...
Samson Mil'shtein +3 more
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Breakdown walkout in pseudomorphic HEMT's
IEEE Transactions on Electron Devices, 1996In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudomorphic AlGaAs-InGaAs-GaAs HEMTs (PHEMTs). Experiments performed on passivated commercial PHEMTs show that hot electron stress cycles induce a large and permanent increase of the gate-drain breakdown voltage.
MENOZZI, Roberto +3 more
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DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT
2015 4th International Conference on Electrical Engineering (ICEE), 2015In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al2O3 gate was applied to the device to suppress the high gate leakage current.
Zine-eddine Touati +2 more
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GaN HEMT for Space Applications
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions.
Tomio Satoh, Ken Osawa, Atsushi Nitta
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Hemt’s capability for millimeter wave applications
Annales Des Télécommunications, 2001Ce papier presente un etat actuel des performances de puissance et de bruit des transistors a effet de champ a gaz ďelectrons bidimensionnel (hemt). On donne au travers de quelques lois simples, la dependance des caracteristiques electriques de ces composants avec la structure de couche (materiaux employes, epaisseursi) et la geometric Enfin on compare
Bollaert, S. +5 more
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