Results 181 to 190 of about 9,883 (230)
Some of the next articles are maybe not open access.
GaN HEMT modeling for power and RF applications using ASM-HEMT
2016 3rd International Conference on Emerging Electronics (ICEE), 2016In this paper, we aim to present an overview of a surface-potential (SP) based model named “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. This model is presently under consideration in the phase-III of industry standardization by the Compact Model Coalition (CMC).
Sudip Ghosh +4 more
openaire +1 more source
Super-low-noise HEMT based on new HEMT noise model
1993 23rd European Microwave Conference, 1993Using a two-dimensional device simulation, we clarified why HEMT's have a superior low-noise performance. The new HEMT noise model, which considers the cooling effect on the electron temperature, indicates that higher sheet carrier density leads to lower noise power.
Kazukiyo Joshin +2 more
openaire +1 more source
Japanese Journal of Applied Physics, 1986
A short and narrow gate GaAs/AlGaAs MESFET with a HEMT structure was tested as a picosecond photodetector. Its impulse response was measured by the autocorrelation technique and found as fast as 22 ps in FWHM.
Tokuo Umeda +2 more
openaire +1 more source
A short and narrow gate GaAs/AlGaAs MESFET with a HEMT structure was tested as a picosecond photodetector. Its impulse response was measured by the autocorrelation technique and found as fast as 22 ps in FWHM.
Tokuo Umeda +2 more
openaire +1 more source
2010
Thermal effects were investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of AlGaN/GaN HEMTs This is implemented by solving simultaneously the acoustic and optical phonon energy balance equations and also takes into account the coupling of the two subsystems The electro-thermal device ...
Dragica Vasileska +3 more
openaire +1 more source
Thermal effects were investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of AlGaN/GaN HEMTs This is implemented by solving simultaneously the acoustic and optical phonon energy balance equations and also takes into account the coupling of the two subsystems The electro-thermal device ...
Dragica Vasileska +3 more
openaire +1 more source
?????????????????? ???????????????????????? ?????????????????????? ???????????????????? ???? HEMT
2017?? ???????????? ???????????????????? ???????????? ???????????????????? ?????????????????? ???????????????????????? ???? HEMT, ???????? ?????????????????? ???? ?????????????????????????????? ???????????????????????? ?? ???????????????????? ?? ???????????????? ?????????????????? ?????????????????. ???????????????????? ?? ???????????????????????????????? ?
openaire +3 more sources
High frequency GaN HEMT Modeling with ASM-HEMT
2022 17th European Microwave Integrated Circuits Conference (EuMIC), 2022R. Sommet +3 more
openaire +1 more source
1996
The paper presents a series of modeling tools for pseudomorphic High Electron Mobility Transistors, discussing their physical content and presenting specific applications. The presented results will show the most peculiar features of electronic transport in such device.
P. Lugli +8 more
openaire +1 more source
The paper presents a series of modeling tools for pseudomorphic High Electron Mobility Transistors, discussing their physical content and presenting specific applications. The presented results will show the most peculiar features of electronic transport in such device.
P. Lugli +8 more
openaire +1 more source
Field Effect TransistorsFETs and HEMTs
2000Abstract This chapter discusses the principles of operation and applications of field effect transistors. Field effect transistors, specifically high electron mobility transistors (HEMTs) or modulation-doped field-effect transistors are being extensively used in low noise and power amplifiers at microwave and millimeter-wave frequencies.
Prashant Chavarkar, Umesh Mishra
openaire +1 more source
Microwave and Optical Technology Letters, 1990
AbstractThe major photoeffects affecting the DC and RF performance of depletion mode Al0.3Ga0.7As/GaAs HEMTs are presented. When photons are absorbed only in the GaAs layer, an increase in the electron concentration of the 2‐DEG channel is estimated (photoconductive effect).
openaire +1 more source
AbstractThe major photoeffects affecting the DC and RF performance of depletion mode Al0.3Ga0.7As/GaAs HEMTs are presented. When photons are absorbed only in the GaAs layer, an increase in the electron concentration of the 2‐DEG channel is estimated (photoconductive effect).
openaire +1 more source
2015
In this chapter, III-V compound semiconductors MESFET, HBT, and HEMT are described, including papers which report major achievements of the HEMT technologies in the fields of microwave, millimeter-wave, and digital Integrated Circuits (ICs). The important aspects of device physics, small-signal equivalent circuits for GaAs, and GaN-based HEMT are ...
Balwant Raj, Sukhleen Bindra Narang
openaire +1 more source
In this chapter, III-V compound semiconductors MESFET, HBT, and HEMT are described, including papers which report major achievements of the HEMT technologies in the fields of microwave, millimeter-wave, and digital Integrated Circuits (ICs). The important aspects of device physics, small-signal equivalent circuits for GaAs, and GaN-based HEMT are ...
Balwant Raj, Sukhleen Bindra Narang
openaire +1 more source