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Field Effect TransistorsFETs and HEMTs
2000Abstract This chapter discusses the principles of operation and applications of field effect transistors. Field effect transistors, specifically high electron mobility transistors (HEMTs) or modulation-doped field-effect transistors are being extensively used in low noise and power amplifiers at microwave and millimeter-wave frequencies.
Prashant Chavarkar, Umesh Mishra
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1996
The paper presents a series of modeling tools for pseudomorphic High Electron Mobility Transistors, discussing their physical content and presenting specific applications. The presented results will show the most peculiar features of electronic transport in such device.
P. Lugli +8 more
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The paper presents a series of modeling tools for pseudomorphic High Electron Mobility Transistors, discussing their physical content and presenting specific applications. The presented results will show the most peculiar features of electronic transport in such device.
P. Lugli +8 more
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Extended Abstracts of the 1984 International Conference on Solid State Devices and Materials, 1984
M. Abe +4 more
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M. Abe +4 more
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Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs
Applied Surface Science, 2022Anran Gao
exaly
GaAlN/GaN HEMT heterostructures grown on ‘SiCopSiC' composite substrates for HEMT application
2008In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC.
Di Forte-Poisson, M.A. +12 more
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