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GaN HEMT modeling for power and RF applications using ASM-HEMT
2016 3rd International Conference on Emerging Electronics (ICEE), 2016In this paper, we aim to present an overview of a surface-potential (SP) based model named “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. This model is presently under consideration in the phase-III of industry standardization by the Compact Model Coalition (CMC).
Sudip Ghosh +4 more
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Super-low-noise HEMT based on new HEMT noise model
1993 23rd European Microwave Conference, 1993Using a two-dimensional device simulation, we clarified why HEMT's have a superior low-noise performance. The new HEMT noise model, which considers the cooling effect on the electron temperature, indicates that higher sheet carrier density leads to lower noise power.
Kazukiyo Joshin +2 more
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2010
Thermal effects were investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of AlGaN/GaN HEMTs This is implemented by solving simultaneously the acoustic and optical phonon energy balance equations and also takes into account the coupling of the two subsystems The electro-thermal device ...
Dragica Vasileska +3 more
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Thermal effects were investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of AlGaN/GaN HEMTs This is implemented by solving simultaneously the acoustic and optical phonon energy balance equations and also takes into account the coupling of the two subsystems The electro-thermal device ...
Dragica Vasileska +3 more
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High frequency GaN HEMT Modeling with ASM-HEMT
2022 17th European Microwave Integrated Circuits Conference (EuMIC), 2022R. Sommet +3 more
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Heteroepitaxy of Hf0.5Zr0.5O2 Ferroelectric Gate Layer on AlGaN/GaN Towards Normally-Off HEMTs
Applied Surface Science, 2022Xinke Liu, Xiaomin Li, Anran Gao
exaly
METHOD FOR MANUFACTURING A GATE TERMINAL OF A HEMT DEVICE, AND HEMT DEVICE
2021IUCOLANO FERDINANDO, TRINGALI CRISTINA
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GaAlN/GaN HEMT heterostructures grown on ‘SiCopSiC' composite substrates for HEMT application
2008In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC.
Di Forte-Poisson, M.A. +12 more
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