Results 191 to 200 of about 9,883 (230)
Some of the next articles are maybe not open access.
GaAlN/GaN HEMT heterostructures grown on ‘SiCopSiC' composite substrates for HEMT application
2008In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC.
Di Forte-Poisson, M.A. +12 more
openaire +2 more sources
IEE Colloquium on Advanced Developments in Microelectronic Engineering, 1996
This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation. (5 pages)
openaire +1 more source
This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation. (5 pages)
openaire +1 more source
Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs
Applied Surface Science, 2022Guanjie Li, Xinke Liu, Anran Gao
exaly
International Journal of High Speed Electronics and Systems
In terahertz (THz) applications, Field-effect transistors (FETs) have emerged as prime candidates for the next generation of THz and sub-THz electronics. One of the main advantages of TeraFETs over state-of-the-art commercial THz electronics based on Schottky diodes is their ability to tune the plasma frequency over a wide range via gate voltage, which
Michael Shur, Grigory Simin
openaire +1 more source
In terahertz (THz) applications, Field-effect transistors (FETs) have emerged as prime candidates for the next generation of THz and sub-THz electronics. One of the main advantages of TeraFETs over state-of-the-art commercial THz electronics based on Schottky diodes is their ability to tune the plasma frequency over a wide range via gate voltage, which
Michael Shur, Grigory Simin
openaire +1 more source
Dynamic piezotronic effect modulated AlGaN/GaN HEMTs with HfZrOx gate dielectric
Materials Today Physics, 2022Xiangbin Cui
exaly