Results 191 to 200 of about 15,181 (229)

Current-Gain Cutoff Frequency Comparison of InGaAs HEMTs

IEEE Electron Device Letters, 1988
S Sasa, K Hikosaka
exaly  

205-GHz (Al,in)N/GaN HEMTs

IEEE Electron Device Letters, 2010
Colombo R Bolognesi, Raphaël Butté, Nicolas Grandjean   +2 more
exaly  

The Indium Content in Metamorphic InxAl1−xAs/InxGa1−xAs HEMTs on GaAs Substrate: A New Structure Parameter

Solid-State Electronics, 2000
Alain Cappy, Henri Happy, Yvon Cordier
exaly  

Short-Channel Effects in AlGAN/GaN HEMTs

Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2001
H Gräbeldinger, H Schweizer, B Kühn
exaly  

HEMT Materials

1993
Kazuo Kondo, Junji Komeno
openaire   +1 more source

P-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

IEEE Electron Device Letters, 2013
Injun Hwang, Jongseob Kim, Jaikwang Shin
exaly  

HEMT TRANSISTOR

2016
MORANCHO FRÉDÉRIC, HAMADY SALEEM, BEYDOUN BILAL   +2 more
openaire   +2 more sources

HEMT Devices

1993
Masayuki Abe, Takashi Mimura
openaire   +1 more source

Harmonic analysis Of GaN- HEMT

2015
note
openaire   +2 more sources

94-GHz 0.1- Mu m T-Gate Low-Noise Pseudomorphic InGaAs HEMTs

IEEE Electron Device Letters, 1990
D C Streit, P H Liu, H C Yen
exaly