Results 191 to 200 of about 17,841 (221)
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2018
This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT
IEEE Transactions on Electron Devices, 2023Raghvendra Dangi +3 more
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Metamorphic HEMT Technology Exemplified by InAlAs/InGaAs/GaAs HEMTs
2012William Hoke, Colin Whelan
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Es wird ein Transistor mit hoher Elektronenbeweglichkeit (engl. High-Electron-Mobility-Transistor, HEMT) mit einer ersten Schicht und einer zweiten Schicht beschrieben. Die erste Schicht weist ein erstes Material aus einer ersten Nitrid-Verbindung auf. Die erste Nitrid-Verbindung weist ein Gruppe-III-Elemente auf.
Kapels, Holger +2 more
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Kapels, Holger +2 more
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Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
IEEE Electron Device Letters, 2012Sen Huang, Qimeng Jiang, Shu Yang
exaly
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
IEEE Electron Device Letters, 2013Injun Hwang, Jongseob Kim, Jaikwang Shin
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