Results 211 to 220 of about 17,841 (221)
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High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology
IEEE Electron Device Letters, 2010Bin Lu, Tomas Palacios
exaly
HEMT for Biosensing Applications
2022Deepak Kumar Panda, Trupti Ranjan Lenka
openaire +1 more source
Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
IEEE Transactions on Electron Devices, 2013Naveen Karumuri +2 more
exaly
Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2011Pil Sung Park, Siddharth Rajan
exaly
P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit
IEEE Electron Device Letters, 2017Manuel Fernandez, Xavier Perpiñà
exaly
>70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning
IEEE Electron Device Letters, 2016exaly
The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
IEEE Transactions on Electron Devices, 2012exaly